Compound used to form a self-assembled monolayer, layer structure, semiconductor component having a layer structure, and method for producing a layer structure
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-029/76
H01L-029/66
출원번호
US-0313250
(2005-12-20)
등록번호
US-7298013
(2007-11-20)
우선권정보
DE-103 28 811(2003-06-20)
발명자
/ 주소
Schmid,Guenter
Halik,Marcus
Klauk,Hagen
Zschieschang,Ute
Effenberger,Franz
Schutz,Markus
Maisch,Steffen
Seifritz,Steffen
Buckel,Frank
출원인 / 주소
Infineon Technologies AG
대리인 / 주소
Slater & Matsil, L.L.P.
인용정보
피인용 횟수 :
3인용 특허 :
5
초록▼
Embodiments of the invention provide a semiconductor component and a method of manufacture thereof. A semiconductor component comprises: a gate electrode layer adjacent a substrate, and a gate dielectric layer adjacent the gate electrode layer. The gate dielectric layer comprises a monolayer of at l
Embodiments of the invention provide a semiconductor component and a method of manufacture thereof. A semiconductor component comprises: a gate electrode layer adjacent a substrate, and a gate dielectric layer adjacent the gate electrode layer. The gate dielectric layer comprises a monolayer of at least one compound, wherein the compound has an aromatic or a condensed aromatic molecular group. The molecular group is capable of π-π interactions, which stabilize the monolayer. In an embodiment, the semiconductor component is an organic field effect transistor (OFET). In an embodiment of the invention, a method includes forming the monolayer using a liquid phase immersion process.
대표청구항▼
What is claimed is: 1. A semiconductor component comprising: a gate electrode layer adjacent a substrate; a gate dielectric layer adjacent the gate electrode layer, wherein the gate dielectric layer comprises a monolayer of at least one compound, wherein the compound has an aromatic or a condensed
What is claimed is: 1. A semiconductor component comprising: a gate electrode layer adjacent a substrate; a gate dielectric layer adjacent the gate electrode layer, wherein the gate dielectric layer comprises a monolayer of at least one compound, wherein the compound has an aromatic or a condensed aromatic molecular group, the molecular group being capable of a π-π interactions; a source layer adjacent the gate electrode layer; a drain layer adjacent the gate electrode layer; an organic semiconductor layer adjacent the gate electrode layer; and a passivation layer adjacent the organic semiconductor layer. 2. The semiconductor component of claim 1, wherein the semiconductor component is an organic field effect transistor (OFET), and the monolayer comprises at least one dielectric layer. 3. The semiconductor component of claim 1, wherein the molecular group capable of π-π interactions is selected from the group consisting essentially of a naphthalene, anthracene, naphthacene, pentacene, biphenyl, terphenyl, quaterphenyl, quinquephenyl, and combinations thereof. 4. The semiconductor component of claim 1, wherein the molecular group capable of π-π interactions is selected from the group consisting essentially of: Furan Thiophene Pyrrole Oxazole Thiazole Imidazole Isoxazole Isothiazol Pyrazole Benzo[b]furan Benzo[b]thiophene Indole 2H-Isoindole Benzothiazole Pyridine Pyrazine Pyrimidine Pyrylium α-Pyrone γ-Pyrone Quinoline Isoquinoline Bipyridine & derivatives (0-2 Xi/ring=N), and combinations thereof. 5. The semiconductor component of claim 1, wherein the compound has at least one anchor group, wherein the anchor group binds to the substrate. 6. The semiconductor component of claim 5, wherein the the anchor group has at least one silane. 7. The semiconductor component of claim 6, wherein the silane is selected from the group consisting essentially of a trichlorosilane, dichlorosilane, a monochlorosilane, a trialkoxysilane, a dialkoxysilane, a monoalkoxysilane, and combinations thereof. 8. The semiconductor component of claim 6, wherein compound has a substantially linear structure and the molecular group capable of a π-π interactions is arranged at an end of the linear structure remote from the anchor group. 9. The semiconductor component of claim 1, wherein the compound is selected from the group consisting essentially of a-substituted alkyltrichlorosilane, a-substituted alkanethiol, a alkaneselenol, disulfides and selenides thereof, and combinations thereof. 10. The semiconductor component of claim 1, wherein the compound is selected from the group consisting essentially of an-phenoxyoctadecyltrichlorosilane,-biphenyloxyoctadecyltrichlorosilane, a phenoxyoctadecanethiol, a thienyloctadeclytrichlorosilane, and combinations thereof. 11. The semiconductor component of claim 1, wherein the compound has a dielectric group for forming the dielectric layer. 12. The semiconductor component of claim 11, wherein the dielectric group has at least one n-alkyl group with n=2 to 20. 13. The semiconductor component of claim 1, wherein the monolayer is arranged on the substrate, the substrate having a surface, wherein the surface is selected from the group consisting essentially of a metallic surface, a metal oxide surface, a plastic surface, and combinations thereof. 14. The semiconductor component of claim 13, wherein the surface has hydroxyl groups. 15. The semiconductor component of claim 14, wherein the substrate is silicon or aluminum. 16. The semiconductor component of claim 1, further comprising: anchor groups bonding the monolayer to the substrate; a layer of dielectric groups arranged above the anchor groups; and a layer of molecular groups capable of a π-π interaction arranged above the dielectric groups. 17. The semiconductor component of claim 16, wherein the anchor group, the dielectric group, and the molecular group capable of the π-π interaction are substantially the same length. 18. The semiconductor component of claim 16, wherein a metal layer is arranged on the monolayer. 19. A semiconductor component of claim 1, wherein the monolayer is deposited on the substrate from a liquid phase or a gas phase. 20. The semiconductor component of claim 19, wherein the monolayer is deposited from a liquid phase with an organic solvent in an immersion process.
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