A laminated spacer portion formed by laminating various thin films that constitute thin-film transistors is disposed in peripheral driver circuits. As a result, even in a structure in which part of a sealing member is disposed above the peripheral driver circuits, pressure exerted from spacers in th
A laminated spacer portion formed by laminating various thin films that constitute thin-film transistors is disposed in peripheral driver circuits. As a result, even in a structure in which part of a sealing member is disposed above the peripheral driver circuits, pressure exerted from spacers in the sealing member is concentrated on the laminated spacer portion, whereby destruction of a thin-film transistor of the peripheral driver circuits can be prevented caused by the pressure from the sealing portion.
대표청구항▼
What is claimed is: 1. An electric device having at least one liquid crystal display panel, said liquid crystal display panel comprising: an active matrix circuit over a first region of a substrate; at least one thin film transistor formed in said active matrix circuit, said at least one thin film
What is claimed is: 1. An electric device having at least one liquid crystal display panel, said liquid crystal display panel comprising: an active matrix circuit over a first region of a substrate; at least one thin film transistor formed in said active matrix circuit, said at least one thin film transistor comprising a semiconductor layer and a gate electrode with a gate insulating film interposed therebetween; a source or drain electrode electrically connected to said semiconductor layer; a protrusion formed over a second region of said substrate, said protrusion comprising a first layer comprising a same material as said gate electrode a second layer comprising a same material as said source or drain electrode, and a third layer comprising a same material as said semiconductor layer; and a sealing member over said protrusion, wherein said first layer and said second layer overlap with each other and are insulated from each other. 2. The device according to claim 1 wherein said protrusion is higher than a portion where said thin film transistor is formed. 3. The device according to claim 1 wherein said protrusion has a function of a spacer. 4. The device according to claim 1 wherein said protrusion has more laminated layers than a portion where said thin film transistor is formed. 5. The device according to claim 1 wherein said thin film transistor is a top-gate type. 6. The device according to claim 1 wherein said device is one selected from the group consisting of a digital camera, an electric camera, a video movie, a personal computer, a navigation system, a projection image display apparatus, and a video camera. 7. The device according to claim 1 wherein said protrusion does not include a source or a drain electrode. 8. The device according to claim 1 wherein said first and second layers are insulated from each other by an insulating film comprising a same material as an interlayer insulating film that covers said gate electrode. 9. An electric device having at least one liquid crystal display panel, said liquid crystal display panel comprising: an active matrix circuit over a first region of a substrate, said circuit comprising at least one thin film transistor, said at least one thin film transistor comprising a gate electrode, a semiconductor layer, and a gate insulating film interposed therebetween, a source or drain electrode electrically connected to said semiconductor layer; a laminated spacer formed over a second region of said substrate; and a sealing member over said laminated spacer, wherein said laminated spacer comprises a first layer comprising a same material as said gate electrode, a second layer comprising a same material as said source or drain electrode, and a third layer comprising a same material as said semiconductor layer, and wherein said first layer and said second layer overlap with each other and are insulated from each other. 10. The device according to claim 9 wherein at least one spacer is included in said sealing member. 11. The device according to claim 9 wherein said gate electrode is formed over said semiconductor layer. 12. The device according to claim 9 wherein said source or drain electrode comprises a laminated structure of titanium and aluminum. 13. The device according to claim 9 wherein said device is one selected from the group consisting of a digital camera, an electric camera, a video movie, a personal computer, a navigation system, a projection image display apparatus, and a video camera. 14. The device according to claim 9 wherein said semiconductor layer comprises crystalline silicon. 15. The device according to claim 9 wherein said laminated spacer does not include a source or a drain electrode. 16. The device according to claim 9 wherein said first and second layers are insulated from each other by an insulating film comprising a same material as an interlayer insulating film that covers said gate electrode. 17. An electric device having at least one liquid crystal display panel, said liquid crystal display panel comprising: an active matrix circuit over a first region of a substrate, said circuit comprising at least one thin film transistor, said at least one thin film transistor comprising a gate electrode, a semiconductor layer, and a gate insulating film interposed therebetween, a source or drain electrode electrically connected to said semiconductor layer; a laminated spacer formed over a second region of said substrate; and a sealing member over said laminated spacer, wherein said laminated spacer comprises a first layer comprising a same material as said gate electrode, a second layer comprising a same material as said semiconductor layer, a third layer comprising a same material as said source or drain electrode, and a fourth layer comprising a same material as said gate insulating film, and wherein said first layer and said third layer overlap with each other and are insulated from each other. 18. The device according to claim 17 wherein at least one spacer is included in said sealing member. 19. The device according to claim 17 wherein said gate electrode is formed over said semiconductor layer. 20. The device according to claim 17 wherein said semiconductor layer comprises crystalline silicon. 21. The device according to claim 17 wherein said source or drain electrode comprises a laminated structure of titanium and aluminum. 22. The device according to claim 17 wherein said device is one selected from the group consisting of a digital camera, an electric camera, a video movie, a personal computer, a navigation system, a projection image display apparatus, and a video camera. 23. The device according to claim 17 wherein said laminated spacer does not include a source or a drain electrode. 24. The device according to claim 17 wherein said first and third layers are insulated from each other by an insulating film comprising a same material as an interlayer insulating film that covers said gate electrode. 25. An electric device having at least one liquid crystal display panel, said liquid crystal display panel comprising: an active matrix circuit over a first region of a substrate, said circuit comprising at least one thin film transistor, said at least one thin film transistor comprising a gate electrode, a semiconductor layer, and a gate insulating film interposed therebetween, a source or drain electrode electrically connected to said semiconductor layer; a laminated layer formed over a second region of said substrate; and a sealing member over said laminated layer, wherein said laminated layer comprises a first layer comprising a same material as said gate electrode, a second layer comprising a same material as said source or drain electrode, and a third layer as a same material as said semiconductor layer, and wherein said first layer and said second layer overlap with each other and are insulated from each other. 26. The device according to claim 25 wherein at least one spacer is included in said sealing member. 27. The device according to claim 25 wherein said gate electrode is formed over said semiconductor layer. 28. The device according to claim 25 wherein said source or drain electrode comprises a laminated structure of titanium and aluminum. 29. The device according to claim 25 wherein said device is one selected from the group consisting of a digital camera, an electric camera, a video movie, a personal computer, a navigation system, a projection image display apparatus, and a video camera. 30. The device according to claim 25 wherein said semiconductor layer comprises crystalline silicon. 31. The device according to claim 25 wherein said laminated layer does not include a source or a drain electrode. 32. The device according to claim 25 wherein said first and second layers are insulated from each other by an insulating film comprising a same material as an interlayer insulating film that covers said gate electrode. 33. An electric device having at least one liquid crystal display panel, said liquid crystal display panel comprising: an active matrix circuit over a first region of a substrate, said circuit comprising at least one thin film transistor, said at least one thin film transistor comprising a gate electrode, a semiconductor layer, and a gate insulating film interposed therebetween, a source or drain electrode electrically connected to said semiconductor layer; a laminated layer formed over a second region of said substrate; and a sealing member over said laminated layer, wherein said laminated layer comprises a first layer comprising a same material as said gate electrode, a second layer comprising a same material as said semiconductor layer, a third layer comprising a same material as said source or drain electrode, and a fourth layer comprising a same material as said gate insulating film, and wherein said first layer and said third layer overlap with each other and are insulated from each other. 34. The device according to claim 33 wherein at least one spacer is included in said sealing member. 35. The device according to claim 33 wherein said gate electrode is formed over said semiconductor layer. 36. The device according to claim 33 wherein said semiconductor layer comprises crystalline silicon. 37. The device according to claim 33 wherein said source or drain electrode comprises a laminated structure of titanium and aluminum. 38. The device according to claim 33 wherein said device is one selected from the group consisting of a digital camera, an electric camera, a video movie, a personal computer, a navigation system, a projection image display apparatus, and a video camera. 39. The device according to claim 33 wherein said laminated layer does not include a source or a drain electrode. 40. The device according to claim 33 wherein said first and third layers are insulated from each other by an insulating film comprising a same material as an interlayer insulating film that covers said gate electrode.
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