초록 ▼

Structure helps support material in a container with an increased exposed surface area to help promote contact of a gas with vaporized material. For at least one disclosed embodiment, the structure may help support material for vaporization in the same form as when the material is placed at the str

Structure helps support material in a container with an increased exposed surface area to help promote contact of a gas with vaporized material. For at least one disclosed embodiment, the structure may help support material for vaporization in the same form as when the material is placed at the structure. For at least one disclosed embodiment, the structure may help support material with an increased exposed surface area relative to a maximum exposed surface area the material could have at rest in the container absent the structure. For at least one disclosed embodiment, the structure may define one or more material support surfaces in an interior region of the container in addition to a bottom surface of the interior region of the container. For at least one disclosed embodiment, the structure may define in an interior region of the container one or more material support surfaces having a total surface area greater than a surface area of a bottom surface of the interior region of the container. For at least one disclosed embodiment, gas resulting from contact of received gas with vaporized material may be delivered to atomic layer deposition (ALD) process equipment.

대표청구항 ▼

What is claimed is: 1. A method comprising the steps of: providing a vessel having a first end, a gas inlet located at the first end, a gas outlet located at the first end, a vessel wall enclosing an interior volume, and a plurality of longitudinally oriented heat transfer elements disposed in the

What is claimed is: 1. A method comprising the steps of: providing a vessel having a first end, a gas inlet located at the first end, a gas outlet located at the first end, a vessel wall enclosing an interior volume, and a plurality of longitudinally oriented heat transfer elements disposed in the interior volume, the vessel containing within the interior volume a solid vaporizable material having a solid form comprising any of agglomerated particles, powders, crystalline material, loose material, discontinuous material, and particulate form material; heating the vessel to vaporize at least a portion of the vaporizable material; introducing a first gas into the vessel via the inlet to contact the vaporizable material and produce a second gas comprising vaporized material; and delivering the second gas comprising vaporized material to process equipment via the outlet, wherein the vessel wall has an interior wall surface contacted by at least one of the first gas and the second gas. 2. The method of claim 1, wherein the solid form comprises any of agglomerated particles, powders and crystalline material. 3. The method of claim 1, wherein the plurality of heat transfer elements is adapted to contact and conduct heat to the vaporizable material. 4. The method of claim 1, wherein the vessel wall comprises a side wall having a first height, the plurality of heat transfer elements has a second height, and the second height is substantially the same as the first height. 5. The method of claim 1, wherein the vessel wall comprises a side wall having a first height, the plurality of heat transfer elements has a second height, and the second height is less than or substantially equal to the first height. 6. The method of claim 1, wherein the vessel comprises an ampoule having an ampoule bottom, side wall, and removable top, and wherein the removable top is disposed along the first end. 7. The method of claim 1, wherein the vessel comprises at least one container disposed within the vessel and further bounding the interior volume, wherein the at least one container comprises a container bottom and side wall. 8. The vaporizer unit of claim 7, wherein the at least one container comprises a plurality of vertically stacked containers positioned within the vessel. 9. The vaporizer unk of claim 7, wherein the at least one container comprises a thermalJy conductive material, and the side wall of the at least one container contacts a side wall portion of the vessel. 10. The method of claim 1 wherein the plurality of longitudinally oriented heat transfer elements defines a plurality of gas flow passages. 11. The method of claim 1, wherein the plurality of longitudinally oriented heat transfer elements comprises a plurality of tubes. 12. The method of claim 1, wherein the vessel includes a support surface bounding in part the interior volume, and the plurality of longitudinally oriented heat transfer elements extend vertically from the support surface. 13. The method of claim 1, wherein the vessel includes a tube extending downwardly within the interior volume and communicatively connected to the gas inlet, and the introducing step includes flowing the first gas through the tube and discharging the first gas into a lower portion of the interior volume. 14. The method of claim 1, further comprising the step of contacting the vaporized material with a substrate. 15. The method of claim 1, further comprising the step of depositing the vaporized material using a deposition process selected from the group consisting of chemical vapor deposition, atomic layer deposition, plasma enhanced atomic layer deposition, metal organic chemical vapor deposition, plasma enhanced chemical vapor deposition, and ion implantation. 16. The method of claim 1, wherein the vaporizable material comprises at least one of boron (B), phosphorous (P), copper (Cu), gallium (Ga), arsenic (As), ruthenium (Ru), indium (In), antimony (Sb), lanthanum (La), tantalum (Ta), iridium (Ir), decaborane (B10H14) hafnium tetrachloride (HfCl4), zirconium tetrachloride (ZrCl4), indium trichloride (InCl3), a metal organic β-diketonate complex, cyclopentadienyl cycloheptatrienyl titanium (CpTiChT), aluminum trichloride (AlCl3), titanium iodide (TixIy), cyclooctatetraene cyclopentadienyl titanium ((Cot)(Cp)Ti), bis(cyclopentadienyl)titanium diazide, tungsten carbonyl (Wx(CO)y), bis(cyclopentadienyl)ruthenium (II) (Ru(Cp)2), and ruthenium trichloride (RuCl3). 17. The method of claim 1, wherein the vaporizable material comprises hafnium tetrachloride (HfCl4). 18. The method of claim 1, comprising the step of saturating the first gas with the vaporizable material. 19. The method of claim 1, further comprising the step of chemically reacting the first gas with the vaporizable material. 20. The method of claim 1, wherein the first end of the vessel is a top end thereof and includes a lid, wherein the lid has an inlet gas flow control valve mounted thereon and coupled to the gas inlet, and wherein the lid has an outlet gas flow control valve mounted thereon and coupled to the gas outlet. 21. The method of claim 1, wherein the vessel includes one or more interior surfaces having a total surface area greater than a surface area of a bottom surface of the interior region of the vessel. 22. The method of claim 1, wherein the vaporizable material comprises crystalline material. 23. The method of claim 1, wherein structure within the interior volume defines one or more surfaces at different levels in the vessel. 24. The method of claim 1, wherein structure within the interior volume defines one or more heated material support surfaces having a total surface area greater than a surface area of a heated bottom surface of the interior region of the vessel. 25. The method of claim 1, wherein the first gas is a carrier gas. 26. The method of claim 1, wherein the first gas is reactive with the vaporizable material. 27. The method of claim 1, further comprising the step of contacting a semiconductor substrate with the vaporized material to form a treated semiconductor substrate. 28. The method of claim 1, further comprising the step of contacting a semiconductor substrate with the vaporized material to form a film on the semiconductor substrate. 29. The method of claim 28, further comprising the step of processing the semiconductor substrate comprising the film to form a semiconductor. 30. The method of claim 1, wherein the longitudinally oriented heat transfer elements comprise a heat conductive material. 31. The method of claim 1, wherein the heating step comprises using a heating power ranging from 100 watts to 3000 watts. 32. The method of claim 1, further comprising the step of preheating the first gas prior to delivery to the vessel. 33. The method of claim 1, further comprising the step of pouring the vaporizable material into the vessel. 34. The method of claim 1, wherein the vessel further comprises one or more filters to prevent solid material in the second gas from being expelled from the vessel. 35. The method of claim 1, wherein the plurality of longitudinally oriented heat transfer elements are in thermal communication with a heat source external to the vessel. 36. A method comprising the steps of: providing a vessel having a first end, a gas inlet located at the first end, a gas outlet located at the first end, a vessel wall enclosing an interior volume, and a plurality of longitudinally oriented heat transfer elements disposed in the interior volume and adapted to contact and conduct heat to a solid vaporizable material disposed within the interior volume, the vaporizable material having a solid form comprising any of agglomerated particles, powders, crystalline material, loose material, discontinuous material, and particulate formmaterial; heating the vessel to vaporize at least a portion of the vaporizable material; introducing a first gas into the vessel via the inlet to contact the vaporizable material and produce a second gas comprising vaporized material; and delivering the second gas comprising vaporized material to process equipment via the outlet, wherein the vessel wall has an interior wall surface contacted by at least one of the first gas and the second gas; and wherein the vessel wall comprises a side wall having a first height, the plurality of heat transfer elements has a second height, and the second height is less than or substantially equal to the first height. 37. The method of claim 36, wherein the solid form comprises at least one of agglomerated particles, powders and crystalline material. 38. The method of claim 36, wherein the vessel includes a tube extending downwardly within the interior volume and communicatively connected to the gas inlet, and the introducing step includes flowing the first gas through the tube and discharging the first gas into a lower portion of the interior volume. 39. The method of claim 36, further comprising the step of depositing the vaporized material using a deposition process selected from the group consisting of chemical vapor deposition, atomic layer deposition, plasma enhanced atomic layer deposition, metal organic chemical vapor deposition, plasma enhanced chemical vapor deposition, and ion implantation. 40. The method of claim 36, wherein the vaporizable material comprises at least one of boron (B), phosphorous (P), copper (Cu), gallium (Ga), arsenic (As), ruthenium (Ru), indium (In), antimony (Sb), lanthanum (La), tantalum (Ta), iridium (Ir), decaborane (B10H14), hafnium tetrachloride (HfCl4), zirconium tetrachloride (ZrCl4), indium trichloride (InCl3), a metal organic β-diketonate complex, cyclopentadienyl cycloheptatrienyl titanium (CpTiChT), aluminum trichloride (AlCl3), titanium iodide (TixIy), cyclooctatetraene cyclopentadienyl titanium ((Cot)(Cp)Ti), bis(cyclopentadienyl)titanium diazide, tungsten carbonyl (Wx(CO)y), bis(cyclopentadienyl)ruthenium (II) (Ru(Cp)2), and ruthenium trichioride (RuCl3). 41. The method of claim 36, wherein the vaporizable material comprises hafnium tetrachloride (HfCl4). 42. The method of claim 36, wherein the vessel includes one or more interior surfaces having a total surface area greater than a surface area of a bottom surface of the interior region of the vessel. 43. The method of claim 36, further comprising the step of pouring the vaporizable material into the vessel. 44. The method of claim 36 wherein the plurality of heat transfer elements defines a plurality of gas flow passages. 45. The method of claim 36, wherein the plurality of heat transfer elements comprises a plurality of tubes. 46. The method of claim 36, wherein the second height is substantially equal to the first height. 47. The method of claim 36, wherein the plurality of heat transfer elements are in thermal communication with a heat source external to the vessel. 48. The method of claim 36, wherein the vessel further comprises one or more filters to prevent solid material in the second gas from being expelled from the vessel. 49. The method of claim 36, further comprising the step of contacting a semiconductor substrate with the vaporized material to form a film on the semiconductor substrate. 50. The method of claim 36, further comprising the step of processing the semiconductor substrate comprising the film to form a semiconductor.