초록

A method of fabricating an integrated circuit comprises forming or providing a solution containing carbon nanotubes and forming a metal layer utilizing the solution.

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What is claimed is: 1. A method of fabricating an integrated circuit comprising: forming or providing a solution containing metal ions and carbon nanotubes; and co-depositing the metal ions and carbon nanotubes onto a substrate utilizing the solution to form a metal layer, said co-depositing includ

What is claimed is: 1. A method of fabricating an integrated circuit comprising: forming or providing a solution containing metal ions and carbon nanotubes; and co-depositing the metal ions and carbon nanotubes onto a substrate utilizing the solution to form a metal layer, said co-depositing including spin-coating onto the substrate at a rotation speed of between about 20 and about 100 rpm for a time of between about 1 and about 5 minutes and annealing the substrate at a temperature of between about 200 and about 500째 C. for a time of between about 1 and about 200 minutes. 2. The method of claim 1 wherein the solution comprises a carbon nanotube suspension. 3. The method of claim 2 wherein the carbon nanotube suspension comprises single wall, arm chair carbon nanotubes. 4. The method of claim 2 wherein the solution further comprises a support electrolyte. 5. The method of claim 2 wherein the carbon nanotube suspension comprises: a plurality of single-walled, arm chair carbon nanotubes; and a solvent selected from the group consisting of water, ethanol, methanol and ethylene glycol. 6. The method of claim 1 wherein the metal ions comprise one or more metal ions selected from the group consisting of copper, silver, gold, aluminum, tin, indium, nickel, cobalt, iron, cadmium, chromium, ruthenium, rhodium, rhenium, antimony, bismuth, platinum, zinc, palladium, manganese, iridium, osmium, molybdenum, tungsten and alloys of the afore-enumerated metals. 7. The method of claim 1 comprising removing excess materials. 8. The method of claim 1 comprising depositing a passivation layer on the metal layer. 9. The method of claim 8, wherein the passivation layer comprises one or more passivation materials selected from a group consisting of SiN, SiC, and cobalt. 10. The method of claim 9, wherein the passivation layer comprises cobalt, and wherein said depositing the passivation layer comprises electrolessly plating cobalt on the metal layer. 11. The method of claim 1, further comprising, prior to said co-depositing: forming an etch stop layer on the substrate; forming an oxide layer on the etch stop layer; forming an opening in the oxide layer; and forming a barrier layer on the oxide layer in the opening; and wherein said co-depositing the metal ions and the carbon nanotubes onto the substrate comprises co-depositing the metal ions and the carbon nanotubes in the opening. 12. The method of claim 11, wherein said forming the opening in the oxide layer comprises forming a via. 13. The method of claim 12, wherein said forming the opening further comprises forming a trench. 14. The method of claim 11, further comprising forming a seed layer on the barrier layer. 15. The method of claim 11, wherein the barrier layer comprises a material selected from a group consisting of tantalum, tantalum nitride, tantalum silicon nitride, titanium nitride, titanium silicon nitride, tungsten nitride, tungsten silicon nitride, and cobalt tungsten phosphide. 16. The method of claim 1, wherein said forming or providing the solution containing metal ions and carbon nanotubes comprises forming or providing a solution containing metal ions and solubilized carbon nanotubes. 17. The method of claim 1, wherein said forming or providing the solution containing metal ions and carbon nanotubes comprises forming or providing a solution containing metal particles having a diameter in a range of about 10 nanometers to about 50 nanometers.