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Edge bead removal by an electro polishing process

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B24B-001/00
  • B23H-003/00
  • C25D-017/00
출원번호 US-0087878 (2005-03-22)
등록번호 US-7303462 (2007-12-04)
발명자 / 주소
  • Duboust,Alain
  • Manens,Antoine P.
  • Chen,Liang Yuh
출원인 / 주소
  • Applied Materials, Inc.
대리인 / 주소
    Patterson & Sheridan
인용정보 피인용 횟수 : 1  인용 특허 : 148

초록

A method and apparatus for the removal of a deposited conductive layer along an edge of a substrate using an electrode configured to electro polish a substrate edge are disclosed. The electro polishing of the substrate edge may occur simultaneously during electrochemical mechanical processing (Ecmp)

대표청구항

The invention claimed is: 1. A method of processing a substrate, comprising: contacting the substrate with a polishing pad assembly comprising at least two electrodes; electrically biasing a first electrode of the polishing pad assembly to form a first electrode zone facing a face of the substrate

이 특허에 인용된 특허 (148)

  1. Buchanan Scott J. (Minneapolis) Morrison Eric D. (West St. Paul) Boston David R. (Woodbury) Hedrick Steven T. (Cottage Grove) Kausch William L. (Cottage Grove) Larson Wayne K. (Maplewood MN), Abrasive article having vanadium oxide incorporated therein.
  2. Harmer Walter L. (Arden Hills MN) Christensen Leif (St. Paul MN) Drtina Gary J. (Woodbury MN) Helmin Harvey J. (Golden Valley MN), Abrasive article with conductive, doped, conjugated, polymer coat and method of making same.
  3. Fujimori Keiichi,JPX ; Matsuo Junji,JPX, Abrasive dresser for polishing disc of chemical-mechanical polisher.
  4. Ferronato Sandro Giovanni Giuseppe (Noorderkerkstraat 19 NL-8081 Et Elburg NLX), Abrasive member for dry grinding and polishing.
  5. Buchanan Scott J. (St. Paul MN) Chang Kwo-Dong A. (St. Paul MN), Abrasive printed with an electrically conductive ink.
  6. Ryoke Katsumi (Kanagawa JPX) Fujiyama Masaaki (Kanagawa JPX) Yamada Keisuke (Kanagawa JPX), Abrasive tape having an interlayer for magnetic head cleaning and polishing.
  7. Datta Madhav ; Edelstein Daniel Charles ; Uzoh Cyprian Emeka, Apparatus and method for the electrochemical etching of a wafer.
  8. Kishii Sadahiro (Kawasaki JPX) Arimoto Yoshihiro (Kawasaki JPX), Apparatus and method for uniformly polishing a wafer.
  9. Kishii Sadahiro (Kawasaki JPX) Arimoto Yoshihiro (Kawasaki JPX) Horie Hiroshi (Kawasaki JPX) Sugimoto Fumitoshi (Kawasaki JPX), Apparatus and method for uniformly polishing a wafer.
  10. Birang Manoocher ; Rosenberg Lawrence M. ; Somekh Sasson ; White John M, Apparatus and methods for chemical mechanical polishing with an advanceable polishing sheet.
  11. Satou Yuuichi,JPX, Apparatus for accurately measuring local thickness of insulating layer on semiconductor wafer during polishing and polishing system using the same.
  12. Peter J. Beckage, Apparatus for determining metal CMP endpoint using integrated polishing pad electrodes.
  13. Uzoh Cyprian Emeka ; Harper James McKell Edwin, Apparatus for electrochemical mechanical planarization.
  14. Emesh,Ismail; Chadda,Saket, Apparatus for electrochemically depositing a material onto a workpiece surface.
  15. Costakis ; Andrew L., Apparatus for electroplating sheet metals.
  16. Talieh Homayoun ; Basol Bulent, Apparatus for forming an electrical contact with a semiconductor substrate.
  17. Jumer ; John F., Apparatus for incremental electro-processing of large areas.
  18. Hyde Thomas C. (Chandler AZ) Roberts John V. H. (Newark DE), Apparatus for interlayer planarization of semiconductor material.
  19. Crevasse Annette Margaret ; Maury Alvaro ; Patel Sanjay ; Sowell John Thomas, Apparatus for performing chemical-mechanical polishing.
  20. Cote William J. (Poughquag NY) Ryan James G. (Newtown CT) Okumura Katsuya (Poughkeepsie NY) Yano Hiroyuki (Wappingers Falls NY), Apparatus for processing semiconductor wafers.
  21. Andreshak Joseph C. (Mahopac NY) Datta Madhav (Peekskill NY) Romankiw Lubomyr T. (Briarcliff Manor NY) Vega Luis F. (Simsbury CT), Apparatus, electrochemical process, and electrolyte for microfinishing stainless steel print bands.
  22. Dorsett Terry E. (11205 Hosford Rd. Chardon OH 44024) Rininger David P. (505 Courtland St. Fairport Harbor OH 44077) Strempel Thomas G. (23601 Colbourne Rd. Euclid OH 44123), Application of electroplate to moving metal by belt plating.
  23. Damgaard Morten J.,DKX ; Bjerregaard Leila,DKX, Attachment means and use of such means for attaching a sheet-formed abrasive or polishing means to a magnetized support.
  24. Tabata Makoto (Furukawa JPX) Takezawa Hiroshi (Furukawa JPX), Automatic lapping apparatus for piezoelectric materials.
  25. Zuniga Steven ; Chen Hung ; Birang Manoocher, Carrier head for chemical mechanical polishing a substrate.
  26. Hung Chih Chen ; Steven M. Zuniga, Carrier head with a compressible film.
  27. Zuniga Steven M. ; Birang Manoocher ; Chen Hung ; Ko Sen-Hou, Carrier head with a flexible membrane for a chemical mechanical polishing system.
  28. Hata William Y., Catalytic acceleration and electrical bias control of CMP processing.
  29. Jensen Alan J. ; Thornton Brian S., Chemical mechanical planarization or polishing pad with sections having varied groove patterns.
  30. Jensen, Alan J.; Thornton, Brian S., Chemical mechanical planarization or polishing pad with sections having varied groove patterns.
  31. Kubo Akira,JPX, Chemical mechanical polishing method suitable for highly accurate planarization.
  32. Chen Lai-Juh,TWX, Chemical-mechanical polish (CMP) pad conditioner.
  33. Chen Lai-Juh,TWX, Chemical-mechanical polish (CMP) pad conditioner.
  34. Nakajima Hideharu,JPX, Chemical-mechanical polishing apparatus.
  35. Lee Kevin J., Chemical-mechanical polishing slurry.
  36. Tsai Chia S. (Hsin-chu TWX) Tseng Pin-Nan (Hsin-chu TWX), Chemical/mechanical planarization (CMP) apparatus and polish method.
  37. Schnabel Herbert W. (Midlothian VA) Buchanan Scott J. (Minneapolis MN) McAllister Richard G. (Sterling MA), Coated abrasive article containing an electrically conductive backing.
  38. Tani Kazunori,SGX ; Kawachi Kohichi,JPX, Combination electrolytic polishing and abrasive super-finishing method.
  39. Lai, Jer-Shyong; Pan, Wen-Chueh; Fann, Yang-Jiann; Wang, Yih-Hsing; He, Chien-Cheng; Hsu, Chaug-Liang, Compensating chemical mechanical wafer polishing apparatus and method.
  40. Hayakawa Izumi (Kamakura JPX) Soboi Hiroshi (Tama JPX), Composite abrasive-articles and manufacturing method therefor.
  41. Lee, Gregory C., Composite polishing pad for chemical-mechanical polishing.
  42. Buchanan Scott J. (St. Paul MN), Conductive coated abrasives.
  43. Butterfield, Paul D.; Chen, Liang-Yuh; Hu, Yonqi; Manens, Antoine P.; Mavliev, Rashid; Tsai, Stan D.; Liu, Feng Q.; Wadensweiler, Ralph; Sun, Lizhong; Neo, Siew S.; Duboust, Alain, Conductive polishing article for electrochemical mechanical polishing.
  44. Tolles Robert D. ; Shendon Norm ; Somekh Sasson ; Perlov Ilya ; Gantvarg Eugene ; Lee Harry Q., Continuous processing system for chemical mechanical polishing.
  45. Carpio Ronald A., Copper chemical mechanical polishing slurry utilizing a chromate oxidant.
  46. Homayoun Talieh ; Cyprian Uzoh ; Bulent M. Basol, Device providing electrical contact to the surface of a semiconductor workpiece during metal plating.
  47. William G. Easter ; John A. Maze, III ; Frank Miceli, Electrochemical mechanical planarization apparatus and method.
  48. Datta Madhav (Yorktown Heights NY) O\Toole Terrence R. (Webster NY), Electrochemical metal removal technique for planarization of surfaces.
  49. Inoue ; Kiyoshi, Electrochemical polishing method.
  50. Chen Lai-Juh (Hsin-Chu TWX), Electrochemical simulator for chemical-mechanical polishing (CMP).
  51. Datta Madhav (Yorktown Heights NY) Romankiw Lubomyr T. (Briarcliff Manor NY), Electrochemical tool for uniform metal removal during electropolishing.
  52. Weihs Timothy P. ; Mann Adrian B. ; Searson Peter C., Electrochemical-control of abrasive polishing and machining rates.
  53. Wardle Frank Peter,GB2, Electrode for electrochemical machining, method of electrochemical machining with said electrode, a bearing and a metho.
  54. Uzoh Cyprian E., Electroetch and chemical mechanical polishing equipment.
  55. Datta Madhav (Yorktown Heights NY) Shenoy Ravindra V. (Peekskill NY), Electroetching method and apparatus.
  56. Wang, Hui; Yih, Peihaur, Electropolishing metal layers on wafers having trenches or vias with dummy structures.
  57. Edelstein Daniel C. ; Horkans Wilma J. ; Luce Stephen E. ; Lustig Naftali E. ; Pope Keith R. ; Roper Peter D., Elimination of photo-induced electrochemical dissolution in chemical mechanical polishing.
  58. Kreisel Rudolf (Nrnberg DEX) Pistor Dieter (Altdorf DEX) Mankut Ludwig (Altdorf DEX) Kosikowski Thomas (Nrnberg DEX) Gaebel Rolf (Berlin DEX) Haase Peter (Feucht DEX) Kuhn Peter (Berlin DEX), Elongated frame for releasably-holding printed circuit boards.
  59. Birang Manoocher, Endpoint detector for a chemical mechanical polishing system.
  60. Shuzo Sato JP; Takuo Ihira JP, Flattening polishing device and flattening polishing method.
  61. Markoo Erik L. (Markaryd SW) Ekblom Hans S. (Markaryd SW) Sandell Torsten Wilhelm (Markaryd SW), Flexible coated abrasive with graphite outer layer.
  62. Shendon Norman ; Sherwood Michael ; Lee Harry, Fluid-pressure regulated wafer polishing head.
  63. Birang Manoocher ; Gleason Allan ; Guthrie William L., Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus.
  64. Chen, Shyng-Tsong; Davis, Kenneth M.; Rodbell, Kenneth P., Grooved polishing pads and methods of use.
  65. Chen, Shyng-Tsong; Davis, Kenneth M.; Rodbell, Kenneth P., Grooved polishing pads and methods of use.
  66. Halley, David G., Hard polishing pad for chemical mechanical planarization.
  67. David F. Bocian ; Werner G. Kuhr ; Jonathan S. Lindsey, High density non-volatile memory device.
  68. Ho Kwok-Lun (P.O. Box 33427 St. Paul MN 55133-3427) Harmer Walter L. (P.O. Box 33427 St. Paul MN 55133-3427), High performance abrasive articles containing abrasive grains and nonabrasive composite grains.
  69. Halley, David G., High planarity chemical mechanical planarization.
  70. Kaanta Carter W. (Colchester VT) Leach Michael A. (Bristol VT), In situ conductivity monitoring technique for chemical/mechanical planarization endpoint detection.
  71. Cheung Robin ; Carl Daniel A. ; Dordi Yezdi ; Hey Peter ; Morad Ratson ; Chen Liang-Yuh ; Smith Paul F. ; Sinha Ashok K., In-situ electroless copper seed layer enhancement in an electroplating system.
  72. Pant Anil K. ; Jairath Rahul ; Mishra Kamal ; Chadda Saket ; Krusell Wilbur C., Integrated pad and belt for chemical mechanical polishing.
  73. John Boyd ; Katgenahalli Y. Ramanujam ; Sridharan Srivatsan ; Xuyen Pham, Interlocking chemical mechanical polishing system.
  74. Adefris Negus B. ; Erickson Carl P., Metal bond abrasive article comprising porous ceramic abrasive composites and method of using same to abrade a workpiece.
  75. Wiand Richard K. (1773 Washington Birmingham MI 48009), Metal-plated abrasive product and method of manufacturing the product.
  76. Paul Lindquist ; Bulent Basol ; Cyprian Uzoh ; Homayoun Talieh, Method and apparatus employing pad designs and structures with improved fluid distribution.
  77. Doi, Toshiro; Fujita, Takashi, Method and apparatus for chemical and mechanical polishing.
  78. Ben Mooring ; Wilbur Krusell ; Glenn Travis ; Erik Engdahl, Method and apparatus for chemical mechanical planarization and polishing of semiconductor wafers using a continuous polishing member feed.
  79. Paton Eric N., Method and apparatus for chemical polishing using field responsive materials.
  80. Travis Glenn ; Pena Christopher, Method and apparatus for chemically-mechanically polishing semiconductor wafers.
  81. Gitis Norm ; Vinogradov Michael, Method and apparatus for controlled polishing.
  82. Cyprian Emeka Uzoh ; Homayoun Talieh, Method and apparatus for depositing and controlling the texture of a thin film.
  83. Dow Daniel B., Method and apparatus for electrically endpointing a chemical-mechanical planarization process.
  84. Dow Daniel B., Method and apparatus for electrically endpointing a chemical-mechanical planarization process.
  85. Talieh Homayoun, Method and apparatus for electro-chemical mechanical deposition.
  86. Sun, Lizhong; Tsai, Stan D.; Redeker, Fred C., Method and apparatus for electrochemical-mechanical planarization.
  87. Hoshino Shigeo (1244-7 ; Mukogaoka Miyamai-Ku ; Kawasaki-shi ; Kanagawa-ken 213 JPX), Method and apparatus for electroplating objects.
  88. Tsai, Stan D.; Wang, Yuchun; Wijekoon, Kapila; Bajaj, Rajeev; Redeker, Fred C., Method and apparatus for enhanced CMP using metals having reductive properties.
  89. Tsai, Stan D.; Wang, Yuchun; Wijekoon, Kapila; Bajaj, Rajeev; Redeker, Fred C., Method and apparatus for enhanced CMP using metals having reductive properties.
  90. Duboust, Alain; Chang, Shou-Sung; Chen, Liang-Yuh; Wang, Yan; Neo, Siew; Sun, Lizhong; Liu, Feng Q., Method and apparatus for face-up substrate polishing.
  91. Lustig Naftali Eliahu ; Guthrie William L. ; Sandwick Thomas E., Method and apparatus for in-line oxide thickness determination in chemical-mechanical polishing.
  92. Sabde Gundu M. ; Meikle Scott, Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates with metal compound abrasives.
  93. Talieh Homayoun ; Uzoh Cyprian Emeka, Method and apparatus for plating and polishing a semiconductor substrate.
  94. Walker Michael A., Method and apparatus for releasably attaching polishing pads to planarizing machines in mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies.
  95. Mayer Steven T. (Piedmont CA) Contolini Robert J. (Pleasanton CA) Bernhardt Anthony F. (Berkeley CA), Method and apparatus for spatially uniform electropolishing and electrolytic etching.
  96. Emesh, Ismail; Gopalan, Periya; Rayer, II, Phillip M.; Palmer, Bentley J., Method and apparatus for the electrochemical deposition and planarization of a material on a workpiece surface.
  97. Nagahara Ronald J. ; Lee Dawn M., Method and apparatus for using pressure differentials through a polishing pad to improve performance in chemical mechani.
  98. Hui Wang, Method for electropolishing metal on semiconductor devices.
  99. Homayoun Talieh ; Bulent Basol, Method for forming an electrical contact with a semiconductor substrate.
  100. Zubatova Lidia S. (Ljublinskaya ; 111 ; kv. 120 Moscow SUX) Grodzinsky Eduard Y. (ulitsa Maril Ulyanovoi ; 11 ; kv. 117 Moscow SUX) Shelyagin Ivan V. (Volgo-gradsky prospekt ; 147/5 ; Korpus 1 ; kv. , Method of abrasive electroerosion grinding.
  101. Yu Chris C. (Boise ID) Doan Trung T. (Boise ID), Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing.
  102. Uzoh Cyprian Emeka ; Harper James McKell Edwin, Method of electrochemical mechanical planarization.
  103. Wardle Frank Peter,GBX ; Girardin Herve,FRX, Method of electrochemically machining a bearing ring.
  104. Buchanan Scott J. (Minneapolis MN), Method of making a coated abrasive article containing a conductive backing.
  105. Liu Yauh-Ching ; Perng Dung-Ching, Method of single step damascene process for deposition and global planarization.
  106. Liu Yauh-Ching ; Perng Dung-Ching, Method of single step damascene process for deposition and global planarization.
  107. Hui Wang, Methods and apparatus for electropolishing metal interconnections on semiconductor devices.
  108. Hui Wang, Methods and apparatus for end-point detection.
  109. Wang Hui, Methods and apparatus for holding and positioning semiconductor workpieces during electropolishing and/or electroplating of the workpieces.
  110. Wang, Hui; Gutman, Felix; Nuch, Voha, Methods and apparatus for holding and positioning semiconductor workpieces during electropolishing and/or electroplating of the workpieces.
  111. Cesna Joseph V., Methods and apparatus for improved polishing of workpieces.
  112. Xu, Cangshan; Zhao, Eugene Y.; Dai, Fen, Methods for making reinforced wafer polishing pads and apparatuses implementing the same.
  113. Xu, Cangshan; Zhao, Eugene Y.; Dai, Fen, Methods for making reinforced wafer polishing pads utilizing direct casting and apparatuses implementing the same.
  114. Cook Lee Melbourne ; James David B. ; Jenkins Charles William ; Reinhardt Heinz F. ; Roberts John V. H. ; Pillai Raj Raghav, Methods for using polishing pads.
  115. Markoo Eric L. (Markaryd SW) Strand Tore G. H. (Naasjo SW) Sandell Thorsten W. (Markaryd SW), Multilayered flexible abrasive containing a layer of electroconductive material.
  116. Shyng-Tsong Chen ; Alex Siu Keung Chung ; Oscar Kai Chi Hsu ; Kenneth P. Rodbell ; Jean Vangsness, Multilayered polishing pad, method for fabricating, and use thereof.
  117. Cyprian Uzoh ; Bulent Basol ; Homayoun Talieh, Pad designs and structures for a versatile materials processing apparatus.
  118. Miller, Bradley J.; Mabon, Roland, Patterned abrasive tools.
  119. Brian Thornton, Planarization system for chemical-mechanical polishing.
  120. Hui Wang, Plating apparatus and method.
  121. Murphy James J. (Austin TX) Farkas Janos (Austin TX) Markert Lucia C. (Austin TX) Jairath Rahul (Austin TX), Point of use slurry dispensing system.
  122. Masuko Takayuki (Tokyo JPX) Suzuki Norio (Yokohama JPX) Moriya Kaoru (Yokohama JPX), Polishing machine for ferrule of optical fiber connector.
  123. Robinson Karl M., Polishing pad and a method for making a polishing pad with covalently bonded particles.
  124. Pham, Xuyen, Polishing pad and method of manufacture.
  125. Cook, Lee Melbourne; James, David B.; Roberts, John V. H., Polishing pad for electrochemical mechanical polishing.
  126. Takiyama Masahiro (Shiojiri JPX) Miyazaki Kunihiro (Shiojiri JPX) Shiozawa Kenichiro (Ashiya JPX), Polishing pad for semiconductor wafers.
  127. Pinheiro, Barry Scott; Naugler, Steven, Polishing pad having an advantageous micro-texture and methods relating thereto.
  128. Reinhardt Heinz F. (Chadds Ford PA) Roberts John V. H. (Newark DE) McClain Harry G. (Middletown DE) Budinger William D. (Newark DE) Jensen Elmer W. (New Castle DE), Polymeric polishing pad containing hollow polymeric microelements.
  129. Berman Michael J., Pre-conditioning polishing pads for chemical-mechanical polishing.
  130. Perlov Ilya ; Gantvarg Eugene ; Lee Harry Q. ; Somekh Sasson ; Tolles Robert D., Radially oscillating carousel processing system for chemical mechanical polishing.
  131. Duescher, Wayne O., Raised island abrasive and process of manufacture.
  132. Duescher, Wayne O., Raised island abrasive, method of use and lapping apparatus.
  133. Uzoh Cyprian E. ; Edelstein Daniel C., Serial intelligent electro-chemical-mechanical wafer processor.
  134. Hsieh Shih-Huang,TWX ; Chen Li-Dum,TWX, Slurry supply system for chemical mechanical polishing.
  135. Maschler Francis S. (Kansas City MO) Seifert Gary A. (Lee\s Summit MO), Supporting an array of elongate articles.
  136. Scholander Elisabeth,SEX ; Werynski Andrzej,PLX ; Jozwiak Andrzej,PLX ; Larm Olle,SEX, Surface modified biocompatible membranes.
  137. Leach Michael A. (Bristol VT) Paulsen James K. (Jericho VT) Machesney Brian J. (Burlington VT) Venditti Daniel J. (Essex Junction VT) Whitaker Christopher R. (Jericho VT), System for mechanical planarization.
  138. Lohokare, Shrikant P.; Bailey, III, Andrew D.; Hemker, David; Cook, Joel M., System, method and apparatus for improved local dual-damascene planarization.
  139. Kirchner, Eric J., Through-pad drainage of slurry during chemical mechanical polishing.
  140. Miyano Kazuyoshi (Yokohama JPX), Traveling-wire electroerosion machine with swiveling nozzle assembly.
  141. Meikle Scott ; Schultz Laurence D., Under-pad for chemical-mechanical planarization of semiconductor wafers.
  142. Cangshan Xu ; Brian S. Lombardo, Unsupported chemical mechanical polishing belt.
  143. Tobin Jim, Wafer transfer station for a chemical mechanical polisher.
  144. Doran, Kevin, Wallpaper removing steamers.
  145. Carlson David W., Web-format polishing pads and methods for manufacturing and using web-format polishing pads in mechanical and chemical-mechanical planarization of microelectronic substrates.
  146. Freerks Conrad T. (Maplewood MN), Wet surface treating device and element therefor.
  147. Hardy L. Charles ; Trice Jennifer L., Working liquids and methods for modifying structured wafers suited for semiconductor fabrication.
  148. Uzoh, Cyprian Emeka; Talieh, Homayoun; Basol, Bulent; Young, Douglas W., Workpeice proximity plating apparatus.

이 특허를 인용한 특허 (1)

  1. Fang, Tong; Kim, Yunsang; Kim, Keechan; Stojakovic, George, Control of bevel etch film profile using plasma exclusion zone rings larger than the wafer diameter.
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