[특허]System for forming composite polymer dielectric film

Dielectric Systems, Inc.

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특허 상세정보

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System for forming composite polymer dielectric film

특허상세정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	C23C-016/52 C23C-016/04 C23C-016/22 C23C-016/452 C23C-016/448 C23C-016/48 C23F-001/00 H01L-021/306 H01L-021/02
미국특허분류(USC)	118/697; 118/696; 118/715; 118/719; 118/725; 156/345.24; 156/345.27; 156/345.31
출원번호	US-0816179 (2004-03-31)
등록번호	US-7309395 (2007-12-18)
발명자 / 주소	Lee,Chung J. Kumar,Atul Chen,Chieh Pikovsky,Yuri
출원인 / 주소	Dielectric Systems, Inc.
대리인 / 주소	Alleman Hall McCoy Russell & Tuttle LLP
인용정보	피인용 횟수 : 3 인용 특허 : 35

초록
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A system for depositing a composite polymer dielectric film on a substrate is disclosed, wherein the composite polymer dielectric film includes a low dielectric constant polymer layer disposed between a first silane-containing layer and a second silane-containing layer. The system includes a process module having a processing chamber and a monomer delivery system configured to admit a gas-phase monomer into the processing chamber for deposition of the low dielectric constant polymer layer, a post-treatment module for annealing the composite polymer dielectric film, and a silane delivery system configured to admit a vapor flow containing a silane precursor into at least one of the process module and the post-treatment module for the formation of the first silane-containing layer and the silane-containing layer.

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What is claimed is: 1. A system for depositing a composite polymer dielectric film on a substrate, the composite polymer dielectric film including a low dielectric constant polymer layer disposed between and chemically bonded to a first silane-containing layer and a second silane-containing layer, the system comprising: a process module including a processing chamber, a source of monomer containing a monomer having a general formula of X'm--Ar--(CZ'Z"Y')n, wherein Ar is an aromatic group or a fluorine-substituted aromatic group, wherein Z' and Z" are removable to generate free radicals, wherein m and n are each equal to zero or an integer, and wherein m+n is less than or equal to a total number of sp2 hybridized carbons on Ar available for substitution, and a monomer delivery system configured to remove the leaving groups and to deliver the monomer in a gas phase into the processing chamber for deposition of the low dielectric constant polymer layer; a post-treatment module for annealing the composite polymer dielectric film; a silane delivery system configured to deliver a vapor flow containing a silane precursor into the system for forming the first silane-containing layer and the second silane-containing layer; memory and a processor in electrical communication with the process module, the post-treatment module and the silane delivery system; and instructions stored on the memory and executable by the processor to control the silane delivery system to deposit the silane precursor on the substrate for a first interval to form the first silane-containing layer, next to control the process module to deposit the gas phase monomer on the first adhesion promoter silane-containing layer for a second interval to form the dielectric constant polymer layer, and next to control the silane delivery system to deposit the silane precursor on the low dielectric constant polymer layer for a third interval to form the second silane-containing layer. 2. The system of claim 1, wherein the silane delivery system is configured to deliver the silane precursor to a silane deposition module that includes a silane deposition chamber and a free radical-generating energy source, and wherein the instructions are executable by the processor to control an exposure of the silane precursor to energy from the energy source to form free radicals in the silane precursor after depositing the silane precursor on the substrate for the first interval. 3. The system of claim 2, wherein the free-radical generating energy source is a UV light source. 4. The system of claim 2, wherein the free-radical generating energy source is a thermal energy source. 5. The system of claim 2, wherein the free-radical generating energy source is a plasma source. 6. The system of claim 1, wherein the silane delivery system is configured to deliver the silane precursor to the process module. 7. The system of claim 1, wherein the silane delivery system is configured to deliver the silane precursor to the post-treatment module. 8. The system of claim 1, wherein the post-treatment module includes a heater for heating the substrate, and wherein the instructions are executable by the processor to anneal the composite dielectric layer in a presence of hydrogen in the post-treatment module via the heater after depositing the silane precursor on the low dielectric constant polymer layer for the third interval. 9. The system of claim 8, wherein the heater is a hot plate. 10. The system of claim 8, wherein the instructions are executable by the processor to anneal the composite dielectric layer in a presence of 3-10% H2 in He. 11. The system of claim 8, wherein the instructions are executable to anneal the composite dielectric layer at a temperature of between approximately 250 and 450 degrees Celsius. 12. The system of claim 8, wherein the instructions are executable to anneal the composite dielectric layer for a duration of between approximately 2 and 10 minutes. 13. The system of claim 1, wherein the process module includes a cooled substrate holder, and wherein the instructions are executable to hold the substrate at a temperature below the crystallization temperature of low dielectric constant polymer layer while depositing the gas phase monomer. 14. The system of claim 13, wherein the instructions are executable to hold the substrate at a temperature of between approximately-25 and-55 degrees Celsius while depositing the gas phase monomer. 15. The system of claim 13, wherein the cooled substrate holder is an electrostatic chuck. 16. The system of claim 15, the chuck having a surface, wherein up to 10 psi of helium is disposed between the substrate and the surface of the chuck during substrate cooling to aid in cooling the substrate. 17. The system of claim 1, wherein the instructions are executable to hold the substrate at a temperature of approximately 25 degrees Celsius or below while depositing the silane precursor. 18. The system of claim 1, wherein the post-treatment module includes an annealing chamber, a vacuum pump system, a mass flow controller, and at least one valve controlling a flow of gas into the annealing chamber, and wherein the instructions are executable to hold an atmosphere within the annealing chamber at a pressure of between approximately 1 and 10 Torr via the vacuum pump and the valve. 19. The system of claim 1, wherein the post-treatment module includes a substrate elevator and a plurality of heating elements for batch substrate processing. 20. The system of claim 1, wherein the first silane-containing layer is a first adhesion promoter layer configured to chemically bond to an underlying silicon-containing layer. 21. The system of claim 1, wherein the second silane-containing layer is a hard mask layer. 22. The system of claim 1, wherein the second silane-containing layer is an etch stop layer. 23. The system of claim 1, wherein the second silane-containing layer is a second adhesion promoter layer configured to chemically bond to an overlying silicon-containing layer. 24. A system for depositing a composite polymer dielectric film on a substrate, the composite polymer dielectric film including a low dielectric constant polymer layer disposed between a first adhesion promoter layer and an overlayer, wherein the overlayer includes at least one layer selected from the group consisting of a second adhesion promoter layer, an etch stop layer and a hard mask layer, wherein the first adhesion promoter layer includes reactive silane groups configured to chemically bond to a silicon-containing layer that is in contact with the adhesion promoter layer, the system comprising: a process module for forming the low dielectric constant polymer layer, wherein the process module includes a deposition chamber and a substrate holder configured to hold and cool a substrate during a deposition process; a source of monomer containing a monomer having a general formula of X'm--Ar--(CZ'Z"Y')n, wherein Ar is an aromatic group or a fluorine-substituted aromatic group, wherein Z' and Z" are selected from the group consisting of H, F, and C6H5, wherein X" and Y" are leaving groups removable to generate free radicals, wherein m and n are each equal to zero or an integer, and wherein m+n is less than or equal to a total number of sp2 hybridized carbons on Ar available for substitution, and a monomer delivery system comprising the source of monomer in communication with the deposition chambers, and a reactor positioned between and in communication with the source of monomer and the deposition chamber for delivering the monomer to the deposition chamber; a post-treatment module for annealing the composite polymer dielectric film, wherein the post-treatment module includes a heat source for heating the substrate and processing gas delivery system for delivering a reducing gas to the post-treatment module; a silane deposition module for depositing the first adhesion promoter layer and the overlayer, wherein the silane deposition module includes a silane deposition chamber and a silane delivery system for delivering a silane precursor to the silane deposition chamber; a transfer module disposed between the process module, the silane deposition module and the post-treatment module, wherein the transfer module includes a substrate transport mechanism for transferring a substrate between the process module and the post-treatment module, memory and a processor in electrical communication with the process module, the post-treatment module and the silane delivery system and instructions stored on the memory and executable by the processor to hold the substrate at a temperature of at least as low as-25 degrees Celsius while depositing the gas phase monomer. 25. The system of claim 24, wherein the instructions executable by the processor to hold the substrate at a temperature of between-30 and-50 degrees Celsius while depositing the gas phase monomer. 26. The system of claim 24, wherein the substrate holder includes a cooling mechanism configured to cool the substrate when the substrate is in the holder. 27. The system of claim 26, wherein the substrate holder is an electrostatic chuck configured to allow a pressure of 10 psi or less of helium to be held between the chuck and the substrate to aid in cooling the substrate. 28. The system of claim 24, wherein the reactor is configured to generate a diradical monomer from the precursor. 29. The system of claim 28, wherein the monomer delivery system includes a vapor flow controller disposed between the vessel and the reactor. 30. The system of claim 24, wherein the silane delivery system includes an inert gas supply, a mass flow controller, and a silane vessel for containing and heating a volume of a silane precursor. 31. The system of claim 24, wherein the post-treatment module includes a hot plate for heating the substrate during annealing. 32. The system of claim 24, further comprising a first load lock and a second load lock coupled to the transfer module, wherein the first load lock is configured to accept insertion of a substrate into the system, and wherein the second load lock is configured to permit removal of a substrate from the system.

이 특허에 인용된 특허 (35)

이 특허를 인용한 특허 피인용횟수: 3

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System for forming composite polymer dielectric film

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System for forming composite polymer dielectric film

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이 특허에 인용된 특허 (35)

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