초록 ▼

A method of making a light emitting device is disclosed. The method includes the steps of providing a light emitting diode and forming an encapsulant in contact with the light emitting diode; wherein forming the encapsulant includes contacting the light emitting diode with a photopolymerizable compo

A method of making a light emitting device is disclosed. The method includes the steps of providing a light emitting diode and forming an encapsulant in contact with the light emitting diode; wherein forming the encapsulant includes contacting the light emitting diode with a photopolymerizable composition consisting of a silicon-containing resin and a metal-containing catalyst, wherein the silicon-containing resin consists of silicon-bonded hydrogen and aliphatic unsaturation, and applying actinic radiation having a wavelength of 700 nm or less to initiate hydrosilylation within the silicon-containing resin.

대표청구항 ▼

What is claimed is: 1. A method of making a light emitting device, the method comprising the steps of: providing a light emitting diode; and forming an encapsulant in contact with the light emitting diode, wherein forming the encapsulant comprises: contacting the light emitting diode with a photopo

What is claimed is: 1. A method of making a light emitting device, the method comprising the steps of: providing a light emitting diode; and forming an encapsulant in contact with the light emitting diode, wherein forming the encapsulant comprises: contacting the light emitting diode with a photopolymerizable composition comprising a silicon-containing resin and a metal-containing catalyst, wherein the silicon-containing resin comprises silicon-bonded hydrogen and aliphatic unsaturation; applying actinic radiation at a temperature of less than 120�� C. to initiate hydrosilylation within the silicon-containing resin, the actinic radiation having a wavelength of 700 nm or less; and heating at less than 150�� C. 2. The method of claim 1, wherein heating is at less than 100�� C. 3. The method of claim 2, wherein heating is at less than 60�� C. 4. A light emitting device comprising a light emitting diode and a photopolymerizable composition comprising a silicon-containing resin and a metal-containing catalyst activated by actinic radiation, wherein the silicon-containing resin comprises silicon-bonded hydrogen and aliphatic unsaturation. 5. The light emitting device of claim 4, wherein the metal-containing catalyst comprises platinum. 6. The light emitting device of claim 4, wherein the photopolymerizable composition is at a temperature of from about 30�� C. to about 120�� C. 7. The light emitting device of claim 6, wherein the metal-containing catalyst comprises platinum.