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Semiconductor devices are described that include a semiconductor layer that contains a trans-1,2-bis(acenyl)ethylene compound. The acenyl group is selected from 2-naphtyl, 2-anthracenyl, or 2-tetracenyl. Additionally, methods of making semiconductor devices are described that include depositing a se

Semiconductor devices are described that include a semiconductor layer that contains a trans-1,2-bis(acenyl)ethylene compound. The acenyl group is selected from 2-naphtyl, 2-anthracenyl, or 2-tetracenyl. Additionally, methods of making semiconductor devices are described that include depositing a semiconductor layer that contains a trans-1,2-bis(acenyl)ethylene compound.

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We claim: 1. A semiconductor device comprising a semiconductor layer comprising a trans-1,2-bis(acenyl)ethylene compound of Formula I wherein Ac1 and Ac2 are each independently a 2-acenyl selected from 2-naphthyl, 2-anthracenyl, or 2-tetracenyl, said 2-acenyl being unsubstituted or substituted w

We claim: 1. A semiconductor device comprising a semiconductor layer comprising a trans-1,2-bis(acenyl)ethylene compound of Formula I wherein Ac1 and Ac2 are each independently a 2-acenyl selected from 2-naphthyl, 2-anthracenyl, or 2-tetracenyl, said 2-acenyl being unsubstituted or substituted with an alkyl, alkoxy, alkylthio, halo, haloalkyl, or a combination thereof. 2. The semiconductor device of claim 1, wherein the Ac1 and Ac2 groups are identical. 3. The semiconductor device of claim 1, wherein the Ac1 and Ac2 groups are unsubstituted. 4. The semiconductor device of claim 1, wherein the compound of Formula I is substituted or unsubstituted trans-1,2-bis(2-naphthyl)ethylene; substituted or unsubstituted trans-1,2-bis(2-anthracenyl)ethylene; or substituted or unsubstituted trans-1,2-bis(2-tetracenyl)ethylene. 5. The semiconductor device of claim 1, wherein the compound of Formula I is substituted or unsubstituted trans-1,2-bis(2-anthracenyl)ethylene. 6. The semiconductor device of claim 1, wherein the compound of Formula I is trans-1,2-bis(2-anthracenyl)ethylene. 7. The semiconductor device of claim 1, further comprising a conducting layer, a dielectric layer, or a combination thereof adjacent to the semiconductor layer. 8. The semiconductor device of claim 1, wherein said semiconductor device comprises an organic thin film transistor. 9. The semiconductor device of claim 1, further comprising a source electrode and a drain electrode in contact with the semiconductor layer, wherein the source electrode and the drain electrode are separated by an area on the surface of the semiconductor layer. 10. The semiconductor device of claim 1, further comprising a conducting layer adjacent to one surface of the semiconducting layer and a dielectric layer adjacent to an opposite surface of the semiconducting layer. 11. A compound of formula wherein Ac1 and Ac2 are each independently a 2-tetracenyl that is unsubstituted or substituted with an alkyl, alkoxy, alkylthio. halo, haloalkyl, or a combination thereof. 12. A method of preparing a semiconductor device, said method comprising preparing a semiconductor layer comprising a trans-1,2-bis(acenyl)ethylene compound of Formula I wherein Ac1 and Ac2 are each independently a 2-acenyl selected from 2-naphthyl, 2-anthracenyl, or 2-tetracenyl, said 2-acenyl being unsubstituted or substituted with an alkyl, alkoxy, alklthio, halo, haloalkyl or a combination thereof. 13. The method of claim 12, further comprising depositing a second layer adjacent to the semiconductor layer, said second layer being a conducting layer or a dielectric layer. 14. The method of claim 12, wherein the compound of Formula I is substituted or unsubstituted trans-1,2-bis(2-naphthyl)ethylene; substituted or unsubstituted trans-1,2-bis(2-anthracenyl)ethylene; or substituted or unsubstituted trans-1,2-bis(2-tetracenyl)ethylene. 15. The method of claim 14, wherein the compound of Formula I is substituted or unsubstituted trans1,2-bis(2-antracenyl)ethylene. 16. A method of preparing an organic thin film transistor, said method comprising: providing a gate electrode; depositing a gate dielectric layer on a surface of the gate electrode; preparing a semiconductor layer adjacent to the gate dielectric layer opposite the gate electrode, said semiconductor layer comprising a trans-1,2-bis(acenyl)ethylene compound of Formula I wherein Ac1 and Ac2 are each independently a 2-acenyl selected from 2-naphthyl, 2-anthracenyl, or 2-tetracenyl, said 2-acenyl being unsubstituted or substituted with an alkyl, alkoxy, alkylthio, halo, haloalkyl, or a combination thereof; and positioning a source electrode and a drain electrode on a surface of the semiconductor layer that is opposite the gate dielectric layer, wherein the source electrode and the drain electrode are separated from each other in an area on the surface of the semiconductor layer. 17. The method of claim 16, further comprising depositing a surface treatment layer between the gate dielectric layer and the semiconductor layer. 18. The method of claim 16, wherein the compound of Formula I is substituted or unsubstituted trans-1,2-bis(2naphthyl)ethylene; substituted or unsubstituted traits 1,2-bis(2anthracenyl)ethylene; or substituted or unsubstituted trans-1,2-bis(tetracenyl)ethylene. 19. A method of preparing an organic thin film transistor, said method comprising: providing a gate electrode; depositing a gate dielectric layer on a surface of the gate electrode; positioning a source electrode and a drain electrode adjacent to the gate dielectric layer opposite the gate electrode, wherein the source electrode and the drain electrode are separated by an area over the gate dielectric layer; preparing a semiconductor layer on a surface of the source electrode, on the surface of the drain electrode, and in the area between the source electrode and the drain electrode, said semiconductor layer comprising a trans-1,2-bis(acenyl)ethylene compound of Formula I wherein Ac1 and Ac2 are each independently a 2-acenyl selected from 2-naphthyl, 2-anthracenyl, or 2-tetracenyl, said 2-acenyl being unsubstituted or substituted with an alkyl, alkoxy, alkylthio, halo, haloalkyl, or a combination thereof. 20. The method of claim 19, said method further comprising depositing a surface treatment layer that contacts he surface of the gate dielectric layer opposite the gate electrode. 21. The method of claim 19, wherein compound of Formula I is substituted or unsubstituted trans-1,2-bis(2-naphthyl)ethylene; substituted or unsubstituted trans-1,2-bis-(2-anthracenyl)ethylene; or substituted or unsubstituted trans-1,2-bis(tetracenyl)ethylene.