A pressure sensor is constructed of a plastic package. The plastic package incorporates in the same material a sensing diaphragm including tensile and compression regions. Deposited on the diaphragm are metal electrodes and a polymer film having piezoresistive properties. The electrodes and/or the p
A pressure sensor is constructed of a plastic package. The plastic package incorporates in the same material a sensing diaphragm including tensile and compression regions. Deposited on the diaphragm are metal electrodes and a polymer film having piezoresistive properties. The electrodes and/or the polymer film are directly printed onto the plastic package without the use of a mask.
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The invention claimed is: 1. An article comprising: a plastic package comprising a pressure sensing diaphragm including a tensile region and a compression region; a metal electrode forming a circuit on said package; and one or more piezoresistors positioned in said circuit; wherein said tensile reg
The invention claimed is: 1. An article comprising: a plastic package comprising a pressure sensing diaphragm including a tensile region and a compression region; a metal electrode forming a circuit on said package; and one or more piezoresistors positioned in said circuit; wherein said tensile region and said compression region are formed in a polymer diaphragm, wherein said polymer diaphragm is contained within a elastic domain, wherein said elastic domain is defined by the thickness and diameter of said polymer diaphragm, and wherein said elastic domain is further defined by one or more overpressure stops. 2. The article of claim 1, wherein said plastic package further comprises a plurality of metalized plastic interconnects, wherein two of said interconnects serve as an input into said circuit, and two of said interconnects serve as an output of said circuit. 3. The article of claim 2, further comprising: a first deformation in said compression region; a second deformation in said tensile region; a change in resistance of said one or more piezoresistors caused by said deformations; and a change in a voltage between said output interconnects caused by said change in resistance. 4. The article of claim 1 wherein said piezoresistors comprise a polymer film, and further wherein said polymer film comprises: a polyanisidine; and a doping agent. 5. The article of claim 4, wherein said doping agent is selected from the group consisting of p-sulfonato-calix[n]arenes (n=4,6,8), p-sulfonato-calix[n]arenes (n=4,6,8) tosylates, carboxylic acids of calix[n]arenes (n=4,6,8), sulfonated crown ethers, sulfonated cyclodextrines, carboxylic acid of nanotubes, and carboxylic acid of fullerenes. 6. The article of claim 4, further comprising: metal nanoparticles in said polymer film; and a passivation layer, said passivation layer selected from a group consisting of polytetrafluoroethylene and Parylene; wherein said Parylene is deposited by a modified hot filament chemical vapor deposition process comprising an addition of a sublimation step of a powder precursor. 7. An article comprising: a plastic package comprising a pressure sensing diaphragm including a tensile region and a compression region; a metal electrode forming a circuit on said package; and a Wheatstone bridge positioned in said circuit; wherein said Wheatstone bridge comprises a first piezoresistor, a second piezoresistor, a third piezoresistor, and a fourth piezoresistor, said first piezoresistor and said third piezoresistor positioned in a first set of opposite arms of said bridge, and said second piezoresistor and said fourth piezoresistor positioned in a second set of opposite arms of said bridge; and wherein said first piezoresistor and said third piezoresistor are positioned on said diaphragm on a region with a first type of strain in said first set of opposite arms of said bridge, and said second piezoresistor and said fourth piezoresistor are positioned on said diaphragm on a region with a second type of strain in said second set of opposite arms of said bridge. 8. The article of claim 7, further comprising a first trimming resistor and a second trimming resistor, said first trimming resistor in parallel with said first piezoresistor, and said second trimming resistor in parallel with said second piezoresistor. 9. An article comprising: a plastic package provided with a pressure sensing diaphragm comprising a tensile region and a compression region; a metal electrode forming a circuit on said package; and one or more piezoresistors positioned in said circuit; wherein said metal electrode and said one or more piezoresistors form a Wheatstone bridge comprising a first piezoresistor, a second piezoresistor, a third piezoresistor, a fourth piezoresistor, a first trimming resistor, and a second trimming resistor; wherein said first piezoresistor and said third piezoresistor are positioned on said diaphragm on a region with a first type of strain in a first set of opposite arms of said bridge, said second piezoresistor and said fourth piezoresistor are positioned on said diaphragm on a region with a second type of strain in a second set of opposite arms of said bridge, said first trimming resistor is in parallel with said first piezoresistor, and said second trimming resistor is in parallel with said second piezoresistor; wherein said piezoresistors comprise a polymer film; and further wherein said polymer film comprises a doping agent selected from the group consisting of p-sulfonato-calix[n]arenes (n=4,6,8), p-sulfonato-calix[n]arenes (n=4,6,8) tosylates, carboxylic acids of calix[n]arenes (n=4,6,8), sulfonated crown ethers, sulfonated cyclodextrines, carboxylic acid of nanotubes, and carboxylic acid of fullerenes. 10. The article of claim 9, further comprising: a force producing a strain on said article; a first deformation in said compression region; a second deformation in said tensile region; a change in resistance of said one or more piezoresistors caused by said force; and a change in output voltage of said Wheatstone bridge caused by said change in resistance.
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이 특허에 인용된 특허 (5)
Kovacich John A. (Wauwatosa WI) Hoinsky Christopher C. (Huntington CT) Van Vessem Peter D. (Beacon Falls CT) Rago Ricardo A. (Bethel CT), Diaphragm mounting system for a pressure transducer.
Takahashi Yoshiharu (Itami JPX) Hirose Tetsuya (Itami JPX) Otani Hiroshi (Itami JPX) Takemura Seiji (Itami JPX), Semiconductor pressure sensor for use at high temperature and pressure and method of manufacturing same.
Moss Mary G. (Rolla MO) Brewer Terry L. (Rolla MO) Flaim Tony D. (Rolla MO), Soluble conducting polymers and their use in manufacturing electronic devices.
Aoki, Daigo; Hashimoto, Hideyuki; Kobayashi, Tetsuya; Koizumi, Kunio; Shimizu, Yoshiaki; Takashima, Yutaka; Yokoyama, Shinya, Semiconductor pressure sensor having a recess with a larger area than a planar shape of a diaphragm.
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