초록 ▼

An LED chip comprising an electrically conductive and radioparent substrate, in which the epitaxial layer sequence (3) is provided on substantially the full area of its p-side (9) with a reflective, bondable p-contact layer (6). The substrate (2) is provided on its main surface (10) facing away from

An LED chip comprising an electrically conductive and radioparent substrate, in which the epitaxial layer sequence (3) is provided on substantially the full area of its p-side (9) with a reflective, bondable p-contact layer (6). The substrate (2) is provided on its main surface (10) facing away from the epitaxial layer sequence (3) with a contact metallization (7) that covers only a portion of said main surface (10), and the decoupling of light from the chip (1) takes place via a bare region of the main surface (10) of the substrate (2) and via the chip sides (14). A further LED chip has epitaxial layers only. The p-type epitaxial layer (5) is provided on substantially the full area of the main surface (9) facing away from the n-conductive epitaxial layer (4) with a reflective, bondable p-contact layer (6), and the n-conductive epitaxial layer (4) is provided on its main surface facing away from the p-conductive epitaxial layer (5) with an n-contact layer (7) that covers only a portion of said main surface (8). The decoupling of light from the chip (1) takes place via the bare region of the main surface (8) of the n-conductive epitaxial layer (4) and via the chip sides (14).

대표청구항 ▼

The invention claimed is: 1. A light-emitting diode chip, comprising: an electrically conductive substrate having a first substrate surface, a second substrate surface opposite the first substrate surface, and at least one side surface; a GaN-based radiation-emitting epitaxial layer sequence compri

The invention claimed is: 1. A light-emitting diode chip, comprising: an electrically conductive substrate having a first substrate surface, a second substrate surface opposite the first substrate surface, and at least one side surface; a GaN-based radiation-emitting epitaxial layer sequence comprising an n-type epitaxial layer deposited on the first substrate surface and a p-type epitaxial layer deposited on the n-type epitaxial layer; a reflective, bondable p-contact layer comprising a first layer transmissive of radiation emitted by the epitaxial sequence and disposed on a side of the epitaxial layer sequence opposite the substrate and a second layer reflective of radiation emitted by the epitaxial sequence and disposed on the first layer; and a contact metallization disposed over only a portion of the second substrate surface, wherein radiation emitted by the epitaxial layer is decoupled through a portion of the second substrate surface over which the metallization is not disposed and through the substrate side surface. 2. The light-emitting diode chip as recited in claim 1, wherein the electrically conductive substrate is thinned after the deposition of the epitaxial layer sequence. 3. The light-emitting diode chip as recited in claim 2, wherein the electrically conductive substrate is a silicon carbide substrate. 4. The light-emitting diode chip as recited in claim 2, wherein the first layer of the reflective, bondable p-contact layer comprises Pt and/or Pd and the second layer of the reflective, bondable p-contact layer comprises Ag, Au and/or Al. 5. The light-emitting diode chip as recited in claim 1, wherein the electrically conductive substrate is a silicon carbide substrate. 6. The light-emitting diode chip as recited in claim 1, wherein the first layer of the reflective, bondable p-contact layer comprises Pt and/or Pd and the second layer of the reflective, bondable p-contact layer comprises Ag, Au and/or Al. 7. The light-emitting diode chip as recited in claim 1, wherein the entire bare surface of, or a subarea of, the layer sequence is roughened. 8. A light-emitting diode chip as claimed in claim 1, wherein the reflective, bondable p-contact layer is provided on substantially the full area of the p-side of the epitaxial layer sequence. 9. The light-emitting diode chip as recited in claim 1, wherein the first layer of the reflective, bondable p-contact layer comprises Pt and/or Pd and the second layer of the reflective, bondable p-contact layer is realized as a dielectric mirror. 10. A light-emitting diode chip comprising: a GaN-based radiation-emitting epitaxial layer sequence comprising a n-type epitaxial layer and a p-type epitaxial layer; a reflecting, bondable p-contact layer disposed on a surface of the p-type epitaxial layer that is oriented away from the n-type epitaxial layer, the p-contact layer comprising a transparent first layer and, deposited thereon, a reflective second layer; an n-contact layer disposed over only a portion of a surface of the n-type epitaxial layer that is oriented away from the p-type epitaxial layer; wherein radiation emitted by the epitaxial layer is decoupled through a portion of the surface of the n-type epitaxial layer over which the n-contact layer is not disposed and through a side of the epitaxial layer sequence and wherein the chip does not include a growth substrate. 11. The light-emitting diode chip as recited in claim 10, the p-contact layer comprises a PtAg alloy and/or a PdAg alloy. 12. The light-emitting diode chip as recited in claim 10, wherein the first layer of the reflective, bondable p-contact layer comprises Pt and/or Pd and the second layer of the reflective, bondable p-contact layer comprises Ag, Au and/or Al. 13. A light-emitting diode chip as claimed in claim 10, wherein the reflective, bondable p-contact layer is provided on substantially the full area of the p-side of the epitaxial layer sequence. 14. The light-emitting diode chip as recited in claim 10, wherein the first layer of the reflective, bondable p-contact layer comprises Pt and/or Pd and the second layer of the reflective, bondable p-contact layer is realized as a dielectric mirror.