초록 ▼

A method and structure for fabricating an electronic device using an SOI technique that results in formation of a buried oxide layer. The method includes fabricating at least one first component of the electronic device and fabricating at least one second component of the electronic device, wherein

A method and structure for fabricating an electronic device using an SOI technique that results in formation of a buried oxide layer. The method includes fabricating at least one first component of the electronic device and fabricating at least one second component of the electronic device, wherein the first component and the second component are on opposite sides of the buried oxide layer, thereby causing the buried oxide layer to perform a function within the electronic device. Entire circuits can be designed around this technique.

대표청구항 ▼

The invention claimed is: 1. A method of fabricating a circuit provided on a semiconductor-on-insulator (SOI) substrate, the method comprising: forming a plurality of field effect transistors (FETs), including a first FET and a second FET disposed in a common device layer, the first FET having a ga

The invention claimed is: 1. A method of fabricating a circuit provided on a semiconductor-on-insulator (SOI) substrate, the method comprising: forming a plurality of field effect transistors (FETs), including a first FET and a second FET disposed in a common device layer, the first FET having a gate disposed below the common device layer, the second FET having a gate disposed above the common device layer, the first and second FETs sharing a common body layer, a third and fourth FET, the third FET having a gate disposed below the common device layer, the fourth FET having a gate disposed above the common device layer, the third and fourth FETs sharing a common body layer, the first and second FETs being interconnected in series by a first source/drain region, the second and third FETs being interconnected in series by a second source/drain region, the third and fourth FETs being interconnected in series by a third source/drain region, a gate electrode of the first FET and a gate electrode of the third FET being coupled to a first conductor for providing a first clock signal, a gate electrode of the second FET and a gate electrode of the fourth FET being coupled to a second conductor for providing a second clock signal, wherein the circuit includes a dynamic two-phase shift register. 2. The method of claim 1 wherein the first FET gate is laterally separated from the second FET gate. 3. The method of claim 1, wherein the first and second FETs are interconnected by a source/drain region. 4. The method of claim 1, wherein the plurality of FETs are formed in accordance with a SIMOX process. 5. The method of claim 1, wherein the plurality of FETs are formed in accordance with a bonded SOI process. 6. The method of claim 1, further comprising forming at least one buried body contact to at least one of the plurality of FETs. 7. The method of claim 1, wherein the first, second, third, and fourth FETs comprise n-type transistors. 8. The method of claim 1, wherein the first conductor comprises a buried wire. 9. An electronic chip containing the dynamic two-phase shift register fabricated in accordance with the method of claim 1, wherein the first and second FET gates are vertically offset from each other. 10. The electronic chip of claim 9, wherein the first and second FETs have non-overlapping channel regions. 11. The method of claim 1, wherein the circuit includes a NAND circuit. 12. A chip including the circuit fabricated in accordance with the method of claim 1. 13. The method of claim 12, further comprising: forming a conductor below the common device layer, the conductor interconnecting at least two of the plurality of FETs. 14. The method of claim 13, wherein the conductor is formed at least partially enclosed by a buried oxide layer. 15. A method of fabricating a circuit provided on a semiconductor-on-insulator (SOI) substrate, the method comprising: forming a plurality of field effect transistors (FETs), including a first FET and a second FET disposed in a common device layer, the first FET having a gate disposed below the common device layer, the second FET having a gate disposed above the common device layer, the first and second FETs sharing a common body, a third and fourth FET, the third and fourth FETs having gates disposed above the common device layer, the first and second FETs being interconnected in parallel by a first and second source/drain region, the third and fourth FETs being interconnected in series by a third source/drain region, a gate electrode of the first FET being coupled to a first conductor for providing a first signal, a gate electrode of the fourth FET being coupled to a second conductor for providing the first signal, a gate electrode of the second FET and a gate electrode of the third FET being coupled to a third conductor for providing a second signal, wherein the circuit includes a NOR circuit. 16. The method of claim 15, wherein the first and second FETs comprise n-type transistors and the third and fourth FETs comprise p-type transistors. 17. The method of claim 15, wherein the first conductor comprises a buried wire.