최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
DataON 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Edison 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0053050 (2005-02-07) |
등록번호 | US-7332066 (2008-02-19) |
발명자 / 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 | 피인용 횟수 : 11 인용 특허 : 385 |
A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has bee
A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.
The embodiments of the invention in which an exclusive property or privilege is claimed are defined as follows: 1. A process for applying a metallization interconnect structure, comprising: (a) providing a workpiece comprising a surface on which a copper metal seed layer is to be formed; (b) using
The embodiments of the invention in which an exclusive property or privilege is claimed are defined as follows: 1. A process for applying a metallization interconnect structure, comprising: (a) providing a workpiece comprising a surface on which a copper metal seed layer is to be formed; (b) using a first electrolytic deposition process to deposit the copper metal seed layer to substantially the entire surface simultaneously, the first electrolytic deposition process forming the copper metal seed layer directly on an underlying barrier layer; and (c) the first electrolytic deposition process taking place within a principal fluid flow chamber of a reactor and comprising supplying electroplating power to a plurality of anodes disposed at different positions within the principal fluid flow chamber relative to the workpiece. 2. The process of claim 1, wherein the copper metal is a copper alloy. 3. The process of claim 1, wherein the first electrolytic deposition process occurs in an alkaline bath. 4. The process of claim 3, wherein the alkaline bath comprises metal ions and an agent effective in complexing the metal ions. 5. The process of claim 4, wherein the complexing agent comprises one or more complexing agents selected from EDTA, ED, and polycarboxylic acid. 6. The process of claim 4, wherein the complexing agent comprises ED and wherein the ED in the electrolytic bath has a concentration within the range of 0.03 to 1.0 M. 7. The process of claim 4, wherein the complexing agent comprises citric acid and the citric acid in the bath has a concentration within the range of 0.03 to 1.0 M. 8. The process of claim 1, further including a second electrolytic deposition process to complete deposition of the metal to a thickness needed for the formation of the interconnect structure. 9. The process of claim 8, wherein the second electrolytic deposition process occurs in an acidic electrolytic solution. 10. The process of claim 1, wherein one or more of the plurality of concentric anodes is disposed in close proximity to the workpiece. 11. The process of claim 1, further including a second electrolytic deposition process comprising depositing a copper metal on the metal seed layer under conditions in which the deposition rate of the second electrolytic deposition process is substantially greater than the deposition rate of the first electrolytic deposition process. 12. The new process of claim 1, wherein the workpiece includes one or more sub-micron recesses in which the copper metal seed layer is to be formed. 13. The process of claim 1, wherein the plurality of anodes are concentrically arranged at varying distances from the workpiece from an innermost one of the plurality of anodes to an outermost one of the plurality of anodes. 14. The process of claim 1, wherein one or more of the plurality of anodes includes a virtual anode. 15. The process of claim 14, wherein the virtual anode comprises an anode chamber housing having a processing fluid inlet and a processing fluid outlet, the processing fluid outlet being disposed in close proximity to the workpiece, and at least one conductive anode element disposed in the anode chamber housing. 16. The process of claim 15, wherein the at least one conductive anode element is formed from non consumable material. 17. The process of claim 1, wherein the principal fluid chamber in which the first electrolytic deposition is carried out, is defined in an upper portion thereof by an angled wall, the angled wall supporting one or more of the plurality of anodes. 18. The process of claim 1, wherein the deposition of the copper metal seed layer is carried out in a principal fluid flow chamber that comprises an inlet disposed at a lower portion thereof and that is configured to provide a venturi effect that facilitates recirculation of a chemical processing fluid in a lower portion of the principal fluid flow chamber. 19. The process of claim 1, wherein during the first electrolytic deposition process at least two of the plurality of anodes are independently connected to an electrical power supply, and the first electrolytic deposition process further comprises independently controlling the supply of electrical power to the at least two of the plurality of anodes. 20. The process of claim 19, wherein the controlling of the supply of power for at least one of the independently controlled anodes is based on one or more user input parameters and a plurality of predetermined sensitivity. 21. The process of claim 20, wherein the electrical power parameter is electrical current. 22. The process of claim 21, wherein the sensitivity values are logically arranged within a controller as one or more Jacobian matrices. 23. A process for applying a metallization interconnect structure, comprising: (a) providing a workpiece on which a copper metal seed layer has been formed using a first deposition process, the workpiece defining a first horizontal plane, the first deposition process being an electrolytic deposition process that forms the copper metal seed layer directly on an underlying barrier layer; (b) the first deposition process comprising supplying electroplating power to a plurality of electrodes within a principal fluid flow chamber, wherein the plurality of electrodes are concentrically disposed in different horizontal planes substantially parallel to the first horizontal plane, wherein at least two of the plurality of electrodes are independently connected to an electrical power supply, further comprising independently controlling the supply of electrical power to the at least two electrodes during deposition of the copper metal seed layer; and (c) electrolytically depositing copper metal on the copper metal seed layer with a second deposition process under conditions in which the deposition rate of the second deposition process is substantially greater than the deposition rate of the first deposition process. 24. The process of claim 23, wherein the copper metal is a copper alloy. 25. The process of claim 24, wherein the first electrolytic deposition process occurs in an alkaline bath. 26. The process of claim 23, wherein the controlling of the supply of power for at least one of the independently controlled electrodes is based on one or more user input parameters and a plurality of predetermined sensitivity values associated with the workpiece, the predetermined sensitivity values corresponding to process perturbations resulting from perturbations of an electrical power supply parameter for the at least one independently controlled electrode. 27. The process of claim 26, wherein the electrical power parameter is electrical current or potential. 28. The process of claim 26, wherein the sensitivity values are logically arranged within a controller as one or more Jacobian matrices. 29. The process of claim 23, wherein the workpiece includes one or more sub-micron recesses in which the copper metal seed layer has been formed. 30. A process for applying a metallization interconnect structure to a workpiece, comprising: (a) depositing a copper metal seed layer using a first deposition process wherein the first deposition process occurs in an alkaline bath, the first deposition process being an electrolytic deposition that forms the copper metal seed layer directly on a barrier layer; (b) the first electrolytic deposition process comprising supplying electroplating power to a plurality of concentric anodes disposed at different positions relative to the workpiece, wherein more than one of the concentric anodes substantially simultaneously contribute to the first electrolytic deposition process; and (c) electrolytically depositing a metal on the copper metal seed layer using a second deposition process, wherein the second deposition process occurs in an acidic bath. 31. The process of claim 30, wherein the metal deposited during the second deposition process is copper. 32. The process of claim 30, wherein the alkaline bath includes a complexing agent comprising EDTA, ED, polycarboxylic acid, and mixtures thereof. 33. The process of claim 30, wherein the workpiece includes one or more microstructures on which the copper metal seed layer is deposited. 34. The process of claim 30, wherein during the first deposition process at least two of the plurality of anodes are independently connected to an electrical power supply, and further comprises independently controlling the supply of electrical power to the at least two of the plurality of anodes. 35. The process of claim 30, wherein the second deposition process comprises supplying electroplating power to a plurality of concentric anodes disposed at different positions within the principal fluid flow chamber relative to the workpiece. 36. A process for applying a metallization interconnect structure, comprising: (a) providing a workpiece on which a copper metal seed layer is to be formed; (b) using a first electrolytic deposition process to deposit the copper metal seed layer directly on an underlying barrier layer, wherein the copper metal seed layer is deposited in a single electrolytic deposition step; and (c) the first electrolytic deposition process taking place within a principal fluid flow chamber of a reactor and comprising supplying electroplating power to a plurality of anodes disposed at different positions within the principal fluid flow chamber relative to the workpiece. 37. A process for applying a metallization interconnect structure, comprising: (a) providing a workpiece on which a copper metal seed layer is to be formed; (b) using a first electrolytic deposition process to deposit the copper metal seed layer, the first electrolytic deposition process forming the copper metal seed layer directly on an underlying barrier layer; and (c) the first electrolytic deposition process taking place within a principal fluid flow chamber of a reactor and comprising supplying electroplating power to a plurality of anodes disposed at different positions within the principal fluid flow chamber relative to the workpiece, wherein the principal fluid is defined in an upper portion thereof by an angled wall, the angled wall supporting one or more of the plurality of anodes. 38. A process for applying a metallization interconnect structure, comprising: (a) providing a workpiece on which a copper metal seed layer is to be formed; (b) using a first electrolytic deposition process to deposit the copper metal seed layer, the first electrolytic deposition process forming the copper metal seed layer directly on an underlying barrier layer; and (c) the first electrolytic deposition process taking place within a principal fluid flow chamber of a reactor and comprising supplying electroplating power to a plurality of anodes disposed at different positions within the principal fluid flow chamber relative to the workpiece, wherein the principal fluid flow chamber comprises an inlet disposed at a lower portion thereof and that is configured to provide a venturi effect that facilitates recirculation of a chemical processing fluid in a lower portion of the principal fluid flow chamber.
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