초록 ▼

An electronic device having an active matrix liquid crystal device comprising a sealing layer with a region overlapping an insulating film formed over another insulating film, which extends beyond said insulating film and forms on a peripheral switching device, a region in contact with said another

An electronic device having an active matrix liquid crystal device comprising a sealing layer with a region overlapping an insulating film formed over another insulating film, which extends beyond said insulating film and forms on a peripheral switching device, a region in contact with said another insulating film, and a region where said second insulating film is not formed over said another insulating film.

대표청구항 ▼

What is claimed is: 1. A display device comprising: a thin film transistor formed over a substrate, the thin film transistor comprising an active layer and a gate electrode with a gate insulating film interposed therebetween; a silicon nitride film formed over at least the gate electrode; a first r

What is claimed is: 1. A display device comprising: a thin film transistor formed over a substrate, the thin film transistor comprising an active layer and a gate electrode with a gate insulating film interposed therebetween; a silicon nitride film formed over at least the gate electrode; a first resin film formed over the silicon nitride film; a line formed on the first resin film, and electrically connected to the active layer; a second resin film formed over the line; and an electrode formed over the second resin film, and electrically connected to the active layer. 2. A display device according to claim 1 wherein the active layer comprises a crystalline silicon film. 3. A display device according to claim 1 wherein the first resin film comprises polyimide. 4. A display device according to claim 1 wherein the second resin film comprises a two-layer structure of polyimide. 5. A display device according to claim 1 wherein the substrate comprises a glass substrate. 6. A display device according to claim 1 wherein the display device comprises a liquid crystal display device. 7. A display device according to claim 1 wherein the display device is incorporated in at least one selected from the group consisting of a portable information processing terminal, a head mount display, a navigation system, a portable telephone, a video camera, and a projector. 8. A display device comprising: a thin film transistor formed over a substrate, the thin film transistor comprising an active layer and a gate electrode with a gate insulating film interposed therebetween; a silicon nitride film formed over at least the gate electrode; a first resin film formed on the silicon nitride film; a line formed over the first resin film, and electrically connected to the active layer; a second resin film formed over the line; and an electrode comprising ITO formed over the second resin film, and electrically connected to the active layer. 9. A display device according to claim 8 wherein the active layer comprises a crystalline silicon film. 10. A display device according to claim 8 wherein the first resin film comprises polyimide. 11. A display device according to claim 8 wherein the second resin film comprises a two-layer structure of polyimide. 12. A display device according to claim 8 wherein the substrate comprises a glass substrate. 13. A display device according to claim 8 wherein the display device comprises a liquid crystal display device. 14. A display device according to claim 8 wherein the display device is incorporated in at least one selected from the group consisting of a portable information processing terminal, a head mount display, a navigation system, a portable telephone, a video camera, and a projector. 15. A display device according to claim 8 wherein the line is in contact with the first resin film. 16. A display device according to claim 1 wherein the line is in contact with the first resin film. 17. A display device comprising: a thin film transistor formed over a substrate, the thin film transistor comprising an active layer and a gate electrode over the active layer with a gate insulating film interposed therebetween; a silicon nitride film formed over at least the gate electrode; a first resin film formed on the silicon nitride film; a line formed over the first resin film, and electrically connected to the active layer; a second resin film formed over the line; and an electrode formed over the second resin film, and electrically connected to the active layer. 18. A display device according to claim 17 wherein the active layer comprises a crystalline silicon film. 19. A display device according to claim 17 wherein the first resin film comprises polyimide. 20. A display device according to claim 17 wherein the second resin film comprises a two-layer structure of polyimide. 21. A display device according to claim 17 wherein the substrate comprises a glass substrate. 22. A display device according to claim 17 wherein the display device comprises a liquid crystal display device. 23. A display device according to claim 17 wherein the display device is incorporated in at least one selected from the group consisting of a portable information processing terminal, a head mount display, a navigation system, a portable telephone, a video camera, and a projector. 24. A display device according to claim 17 wherein the line is in contact with the first resin film. 25. A display device comprising: a thin film transistor formed over a substrate, the thin film transistor comprising an active layer and a gate electrode over the active layer with a gate insulating film interposed therebetween; a silicon nitride film formed over at least the gate electrode; a first resin film formed on the silicon nitride film; a line formed over the first resin film, and electrically connected to the active layer; a second resin film formed over the line; and an electrode comprising ITO formed over the second resin film, and electrically connected to the active layer. 26. A display device according to claim 25 wherein the active layer comprises a crystalline silicon film. 27. A display device according to claim 25 wherein the first resin film comprises polyimide. 28. A display device according to claim 25 wherein the second resin film comprises a two-layer structure of polyimide. 29. A display device according to claim 25 wherein the substrate comprises a glass substrate. 30. A display device according to claim 25 wherein the display device comprises a liquid crystal display device. 31. A display device according to claim 25 wherein the display device is incorporated in at least one selected from the group consisting of a portable information processing terminal, a head mount display, a navigation system, a portable telephone, a video camera, and a projector. 32. A display device comprising: a thin film transistor formed over a substrate, the thin film transistor comprising an active layer and a gate electrode with a gate insulating film interposed therebetween; a silicon nitride film formed over at least the gate electrode; a first resin film formed on the silicon nitride film; a line formed over the first resin film, and electrically connected to the active layer; a second resin film formed over the line; and an electrode formed over the second resin film, and electrically connected to the active layer, wherein the first resin film extends beyond the second resin film. 33. A display device according to claim 32 wherein the active layer comprises a crystalline silicon film. 34. A display device according to claim 32 wherein the first resin film comprises polyimide. 35. A display device according to claim 32 wherein the second resin film comprises a two-layer structure of polyimide. 36. A display device according to claim 32 wherein the substrate comprises a glass substrate. 37. A display device according to claim 32 wherein the display device comprises a liquid crystal display device. 38. A display device according to claim 32 wherein the display device is incorporated in at least one selected from the group consisting of a portable information processing terminal, a head mount display, a navigation system, a portable telephone, a video camera, and a projector. 39. A display device according to claim 32 wherein the line is in contact with the first resin film. 40. A display device according to claim 25 wherein the line is in contact with the first resin film. 41. A display device comprising: a thin film transistor formed over a substrate, the thin film transistor comprising an active layer and a gate electrode with a gate insulating film interposed therebetween; a silicon nitride film formed over at least the gate electrode; a first resin film formed on the silicon nitride film; a line formed over the first resin film, and electrically connected to the active layer; a second resin film formed over the line; and an electrode comprising ITO formed over the second resin film, and electrically connected to the active layer, wherein the first resin film extends beyond the second resin film. 42. A display device according to claim 41 wherein the active layer comprises a crystalline silicon film. 43. A display device according to claim 41 wherein the first resin film comprises polyimide. 44. A display device according to claim 41 wherein the second resin film comprises a two-layer structure of polyimide. 45. A display device according to claim 41 wherein the substrate comprises a glass substrate. 46. A display device according to claim 41 wherein the display device comprises a liquid crystal display device. 47. A display device according to claim 41 wherein the display device is incorporated in at least one selected from the group consisting of a portable information processing terminal, a head mount display, a navigation system, a portable telephone, a video camera, and a projector. 48. A display device according to claim 41 wherein the line is in contact with the first resin film. 49. A display device comprising: a thin film transistor formed over a substrate, the thin film transistor comprising an active layer and a gate electrode over the active layer with a gate insulating film interposed therebetween; a silicon nitride film formed over at least the gate electrode; a first resin film formed on the silicon nitride film; a line formed over the first resin film, and electrically connected to the active layer; a second resin film formed over the line; and an electrode comprising ITO formed over the second resin film, and electrically connected to the active layer, wherein the first resin film extends beyond the second resin film. 50. A display device according to claim 49 wherein the active layer comprises a crystalline silicon film. 51. A display device according to claim 49 wherein the first resin film comprises polyimide. 52. A display device according to claim 49 wherein the second resin film comprises a two-layer structure of polyimide. 53. A display device according to claim 49 wherein the substrate comprises a glass substrate. 54. A display device according to claim 49 wherein the display device comprises a liquid crystal display device. 55. A display device according to claim 49 wherein the display device is incorporated in at least one selected from the group consisting of a portable information processing terminal, a head mount display, a navigation system, a portable telephone, a video camera, and a projector. 56. A display device according to claim 49 wherein the line is in contact with the first resin film. 57. A display device comprising: a thin film transistor formed over a substrate, the thin film transistor comprising an active layer and a gate electrode with a gate insulating film interposed therebetween; a silicon nitride film formed over at least the gate electrode; a first resin film formed over the silicon nitride film; a second resin film formed over the first resin film; a line formed between the first resin film and the second resin film, and electrically connected to the active layer; and an electrode formed over the second resin film, and electrically connected to the active layer. 58. A display device according to claim 57 wherein the active layer comprises a crystalline silicon film. 59. A display device according to claim 57 wherein the first resin film comprises polyimide. 60. A display device according to claim 57 wherein the second resin film comprises a two-layer structure of polyimide. 61. A display device according to claim 57 wherein the substrate comprises a glass substrate. 62. A display device according to claim 57 wherein the display device comprises a liquid crystal display device. 63. A display device according to claim 57 wherein the display device is incorporated in at least one selected from the group consisting of a portable information processing terminal, a head mount display, a navigation system, a portable telephone, a video camera, and a projector. 64. A display device comprising: a thin film transistor formed over a substrate, the thin film transistor comprising an active layer and a gate electrode with a gate insulating film interposed therebetween; a silicon nitride film formed over at least the gate electrode; a first resin film formed over the silicon nitride film; a second resin film formed over the first resin film; a line formed between the first resin film and the second resin film, and electrically connected to the active layer; and an electrode comprising ITO formed over the second resin film, and electrically connected to the active layer. 65. A display device according to claim 64 wherein the active layer comprises a crystalline silicon film. 66. A display device according to claim 64 wherein the first resin film comprises polyimide. 67. A display device according to claim 64 wherein the second resin film comprises a two-layer structure of polyimide. 68. A display device according to claim 64 wherein the substrate comprises a glass substrate. 69. A display device according to claim 64 wherein the display device comprises a liquid crystal display device. 70. A display device according to claim 64 wherein the display device is incorporated in at least one selected from the group consisting of a portable information processing terminal, a head mount display, a navigation system, a portable telephone, a video camera, and a projector. 71. A display device comprising: a thin film transistor formed over a substrate, the thin film transistor comprising an active layer and a gate electrode over the active layer with a gate insulating film interposed therebetween; a silicon nitride film formed over at least the gate electrode; a first resin film formed over the silicon nitride film; a second resin film formed over the first resin film; a line formed between the first resin film and the second resin film, and electrically connected to the active layer; and an electrode formed over the second resin film, and electrically connected to the active layer. 72. A display device according to claim 71 wherein the active layer comprises a crystalline silicon film. 73. A display device according to claim 71 wherein the first resin film comprises polyimide. 74. A display device according to claim 71 wherein the second resin film comprises a two-layer structure of polyimide. 75. A display device according to claim 71 wherein the substrate comprises a glass substrate. 76. A display device according to claim 71 wherein the display device comprises a liquid crystal display device. 77. A display device according to claim 71 wherein the display device is incorporated in at least one selected from the group consisting of a portable information processing terminal, a head mount display, a navigation system, a portable telephone, a video camera, and a projector. 78. A display device comprising: a thin film transistor formed over a substrate, the thin film transistor comprising an active layer and a gate electrode over the active layer with a gate insulating film interposed therebetween; a silicon nitride film formed over at least the gate electrode; a first resin film formed over the silicon nitride film; a second resin film formed over the first resin film; a line formed between the first resin film and the second resin film, and electrically connected to the active layer; and an electrode comprising ITO formed over the second resin film, and electrically connected to the active layer. 79. A display device according to claim 78 wherein the active layer comprises a crystalline silicon film. 80. A display device according to claim 78 wherein the first resin film comprises polyimide. 81. A display device according to claim 78 wherein the second resin film comprises a two-layer structure of polyimide. 82. A display device according to claim 78 wherein the substrate comprises a glass substrate. 83. A display device according to claim 78 wherein the display device comprises a liquid crystal display device. 84. A display device according to claim 78 wherein the display device is incorporated in at least one selected from the group consisting of a portable information processing terminal, a head mount display, a navigation system, a portable telephone, a video camera, and a projector.