초록 ▼

A damascene wire and method of forming the wire. The method including: forming a mask layer on a top surface of a dielectric layer; forming an opening in the mask layer; forming a trench in the dielectric layer where the dielectric layer is not protected by the mask layer; recessing the sidewalls of

A damascene wire and method of forming the wire. The method including: forming a mask layer on a top surface of a dielectric layer; forming an opening in the mask layer; forming a trench in the dielectric layer where the dielectric layer is not protected by the mask layer; recessing the sidewalls of the trench under the mask layer; forming a conformal conductive liner on all exposed surface of the trench and the mask layer; filling the trench with a core electrical conductor; removing portions of the conductive liner extending above the top surface of the dielectric layer and removing the mask layer; and forming a conductive cap on a top surface of the core conductor. The structure includes a core conductor clad in a conductive liner and a conductive capping layer in contact with the top surface of the core conductor that is not covered by the conductive liner.

대표청구항 ▼

What is claimed is: 1. A method, comprising: providing a substrate having a dielectric layer; forming a hard mask layer on a top surface of said dielectric layer; forming an opening in said hard mask layer; forming a trench in said dielectric layer where said dielectric layer is not protected by sa

What is claimed is: 1. A method, comprising: providing a substrate having a dielectric layer; forming a hard mask layer on a top surface of said dielectric layer; forming an opening in said hard mask layer; forming a trench in said dielectric layer where said dielectric layer is not protected by said hard mask layer said trench having sidewalls and a bottom; recessing said sidewalls of said trench under said hard mask layer; forming a conformal electrically conductive liner on all exposed surface of said trench and said hard mask layer; forming a dielectric liner on said electrically conductive liner where said electrically conductive liner is in contact with said sidewalls of said trench; filling said trench with a core electrical conductor; removing portions of said electrically conductive liner extending above said top surface of said dielectric layer and removing said mask layer; forming an electrically conductive cap on a top surface of said core electrical conductor; before said filling said trench with said core electrical conductor, forming a dielectric liner on exposed surfaces of said electrically conductive liner; and removing said dielectric liner from surfaces of said electrically conductive liner where said electrically conductive liner is in contact with said bottom surface of said trench. 2. The method of claim 1, wherein said electrically conductive liner and said electrically conductive cap are diffusion barriers to one or more materials said core electrical conductor is comprised of. 3. The method of claim 1, wherein said hard mask layer comprises a material selected from the group consisting of SiO2, Si3N4, SiC, SiON, SiOC, SiCOH, PSiNx and SiC(N,H). 4. The method of claim 1, wherein said dielectric layer comprises a material selected from the group consisting of a dielectric material having a relative permittivity of about 4 or less, hydrogen silsesquioxane polymer, methyl silsesquioxane polymer, polyphenylene oligomerm, SiO2 and combinations thereof. 5. The method of claim 1, wherein said electrically conductive liner comprises a material selected from the group consisting of Ta, TaN, Ti, TiN, TiSiN, W, Ru and combinations thereof. 6. The method of claim 1, wherein said core electrical conductor comprises a material selected from the group consisting of Al, AlCu, Cu, W, Ag, Au and combinations thereof. 7. The method of claim 1, wherein said electrically conductive cap comprises a material selected from the group consisting of CoWP, CoSnP, CoP, Pd or combinations thereof. 8. The method of claim 1, wherein said dielectric layer comprises a first dielectric layer formed on a top surface of a second dielectric layer, said first dielectric layer being a diffusion barrier to one or more materials said core electrical conductor is comprised of. 9. The method of claim 1, wherein said forming an electrically conductive cap includes an electroless plating of at least a portion of said electrically conductive cap. 10. A method comprising: providing a substrate having a dielectric layer; forming a hard mask layer on a top surface of said dielectric layer; forming an opening in said hard mask layer; forming a trench in said dielectric layer where said dielectric layer is not protected by said hard mask layer, said trench having sidewalls and a bottom, said sidewalls of said trench aligned with said opening in said hard mask; performing an isotropic etch of said sidewalls and bottom of said trench, said isotropic etch undercutting said hard mask layer and forming a hard mask overhang projecting over said trench; forming a conformal electrically conductive liner on all exposed surfaces of said trench and on all exposed surfaces of said hard mask layer, an upper portion of said electrically conductive liner in physical contact with said hard mask overhang and forming an electrically conductive overhang projecting over said trench; forming a core electrical conductor over said electrically conductive liner, said core electrical conductor filling said trench; performing a chemical-mechanical polish to remove said hard mask layer and all core electrical conductor extending above said top surface of said dielectric layer, said chemical-mechanical-polishing making coplanar a top surface of said dielectric layer, a top surface of said electrically conductive liner and a top surface of said core electrical conductor in said trench, said electrically conductive layer extending over and in direct physical contact with said core electrical conductor; and forming an electrically conductive cap on said top surface of said core electrical conductor. 11. The method of claim 10, further including: forming a dielectric liner on exposed surfaces of said electrically conductive liner; and removing said dielectric liner from surfaces of said electrically conductive liner where said electrically conductive liner is in contact with said bottom surfaces of said trench. 12. The method of claim 10, wherein said forming a conformal electrically conductive liner includes: simultaneously depositing and sputter etching a metal layer on said sidewalls of said trench. 13. The method of claim 12, wherein said forming a conformal electrically conductive liner further includes depositing another metal layer on said metal layer on said sidewalls of said trench after said simultaneously depositing and sputter etching. 14. The method of claim 10, wherein said electrically conductive liner and said electrically conductive cap are diffusion barriers to one or more materials said core electrical conductor is comprised of. 15. The method of claim 10, wherein said forming an electrically conductive cap includes an electroless plating of at least a portion of said electrically conductive cap. 16. The method of claim 10, wherein said dielectric layer comprises a first dielectric layer formed on a top surface of a second dielectric layer, said first dielectric layer being a diffusion barrier to one or more materials said core electrical conductor is comprised of. 17. The method of claim 10, wherein: said electrically conductive liner comprises a material selected from the group consisting of Ta, TaN, Ti, TiN, TiSiN, W, Ru and combinations thereof; said core electrical conductor comprises a material selected from the group consisting of Al, AlCu, Cu, W, Ag, Au and combinations thereof; and said electrically conductive cap comprises a material selected from the group consisting of CoWP, CoSnP, CoP, Pd or combinations thereof.