초록 ▼

A method that controls the distribution of plasma generated in a vacuum chamber, for example, as part of a plasma thin film deposition or plasma etching process. For thin film deposition, the method serves to minimize variations in film thickness caused by the variations of the film deposition condi

A method that controls the distribution of plasma generated in a vacuum chamber, for example, as part of a plasma thin film deposition or plasma etching process. For thin film deposition, the method serves to minimize variations in film thickness caused by the variations of the film deposition conditions. The vacuum chamber includes a high-frequency-wave electrode connected to a high-frequency electric power supply and an earth electrode connected to ground potential. High frequency-electric power is fed to the high-frequency-wave electrode and peak-to peak voltages are measured at multiple measuring points on one of the two electrodes. The distribution of the plasma is controlled by adjusting the chamber pressure to minimize the differences between the measured peak-to-peak voltages.

대표청구항 ▼

What is claimed is: 1. A plasma control method for controlling distribution of a plasma generated in a vacuum chamber including a first electrode connected to a high-frequency electric power supply and a second electrode facing the first electrode, the second electrode being connected to one of gro

What is claimed is: 1. A plasma control method for controlling distribution of a plasma generated in a vacuum chamber including a first electrode connected to a high-frequency electric power supply and a second electrode facing the first electrode, the second electrode being connected to one of ground potential or a predetermined electric power supply, the plasma being generated by the high-frequency electric power fed to the first electrode, the method comprising the steps of: measuring peak-to-peak voltages at multiple points on at least one of the first electrode and the second electrode; and controlling distribution of the plasma generated based on the measured peak-to-peak voltages at the multiple points by maintaining the peak-to-peak voltages measured at the multiple points approximately the same so that uniformity is improved. 2. The plasma control method for controlling distribution of a plasma generated in a vacuum chamber having a pressure which is variable and including a first electrode connected to a high-frequency electric power supply and a second electrode facing the first electrode, the second electrode being connected to one of ground potential or a predetermined electric power supply, the plasma being generated by the high-frequency electric power fed to the first electrode, the method comprising the steps of: measuring peak-to-peak voltages at multiple points on at least one of the first electrode and the second electrode; and controlling the distribution of the plasma generated based on the measured peak-to-peak voltages at the multiple points by maintaining the peak-to-peak voltages measured at the multiple points approximately the same so that uniformity is improved; wherein controlling distribution of the plasma generated is accomplished by maintaining the peak-to-peak voltages measured at the multiple points to be approximately the same by adjusting the pressure in the vacuum chamber. 3. The plasma control method according to claim 1, wherein controlling distribution of the plasma generated is accomplished by using an automatic control means to maintain the peak-to-peak voltages measured at the multiple points to be approximately the same. 4. The plasma control method according to claim 3, wherein the vacuum chamber has a variable pressure and the automatic control means maintains the peak-to-peak voltages measured at the multiple points to be approximately the same by adjusting the pressure in the vacuum chamber. 5. The plasma control method according to claim 1, further comprising positioning a substrate on one of the first electrode or the second electrode, flowing a film deposition gas onto the substrate in the vacuum chamber under conditions effective to generate a film-forming plasma, and depositing a thin film on the substrate under predetermined film deposition conditions using the film-forming plasma, wherein the distribution of the film-forming plasma is controlled in the step of controlling. 6. The plasma control method according to claim 5, wherein the film being formed is a non-crystalline photoelectric converter layer containing SiH2 and SiH for a solar cell, and wherein the predetermined film deposition conditions provide a ratio of hydrogen in SiH2 bondings to hydrogen in SiH bondings (SiH2/SiH) in the non-crystalline photoelectric converter layer which is selected to be 0.3 or smaller, and the peak-to-peak voltages measured at the multiple points are selected to be 300 V or lower. 7. The plasma control method according to claim 1, further comprising positioning a substrate on one of the first electrode or the second electrode, flowing an etching gas onto the substrate in the vacuum chamber under conditions effective to generate an etching plasma, and etching the substrate using the etching plasma, wherein the distribution of the etching plasma is controlled in the step of controlling.