초록 ▼

An improved wire bond is provided with the bond pads of semiconductor devices and the lead fingers of lead frames or an improved conductive lead of a TAB tape bond with the bond pad of a semiconductor device. More specifically, an improved wire bond is described wherein the bond pad on a surface of

An improved wire bond is provided with the bond pads of semiconductor devices and the lead fingers of lead frames or an improved conductive lead of a TAB tape bond with the bond pad of a semiconductor device. More specifically, an improved wire bond is described wherein the bond pad on a surface of the semiconductor device comprises a layer of copper and at least one layer of metal and/or at least a barrier layer of material between the copper layer and one layer of metal on the copper layer to form a bond pad.

대표청구항 ▼

What is claimed is: 1. A method of forming a semiconductor device assembly, said method comprising: providing a substrate having an upper surface and a lower surface; depositing a layer of copper on the upper surface and the lower surface of the substrate; patterning the layer of copper on at least

What is claimed is: 1. A method of forming a semiconductor device assembly, said method comprising: providing a substrate having an upper surface and a lower surface; depositing a layer of copper on the upper surface and the lower surface of the substrate; patterning the layer of copper on at least one surface of the upper surface and the lower surface of the substrate to form at least one bond pad thereon; depositing at least one layer of metal on at least a portion of the layer of copper; connecting one end of a conductive lead of a TAB tape to the at least one layer of metal; and consuming a portion of the at least one layer of metal during the connecting of one end of a conductive lead of a TAB tape for connecting at least a portion of one end of the conductive lead of the TAB tape to at least a portion of the layer of copper. 2. The method of claim 1, further comprising: connecting one end of the conductive lead of the TAB tape to the at least one layer of metal using a wire bond. 3. A method of forming a semiconductor device assembly, said method comprising: providing a substrate having an upper surface and a lower surface; depositing a layer of copper on the upper surface and the lower surface of the substrate; patterning the layer of copper on both the upper surface and the lower surface of the substrate to form at least one bond pad thereon; depositing at least one layer of gold metal on at least a portion of the layer of copper; connecting one end of a conductive lead of a TAB tape to the at least one layer of gold metal; and consuming a portion of the at least one layer of gold metal during the connecting of one end of a conductive lead of a TAB tape for connecting at least a portion of one end of the conductive lead of the TAB tape to at least a portion of the layer of copper. 4. A method of forming a semiconductor device assembly having a substrate having an upper surface and a lower surface, said method comprising: depositing a layer of copper on the upper surface and the lower surface of the substrate; patterning the layer of copper on the upper surface and the lower surface of the substrate to form at least one bond pad thereon; depositing at least one layer of metal on at least a portion of the layer of copper; connecting one end of a conductive lead of a TAB tape to the at least one layer of metal; and consuming a portion of the at least one layer of metal during the connecting of one end of a conductive lead of a TAB tape for connecting at least a portion of one end of the conductive lead of the TAB tape to at least a portion of the layer of copper. 5. The method of claim 4, further comprising: connecting one end of the conductive lead of the TAB tape to the at least one layer of metal using a wire bond. 6. A method of forming a semiconductor device assembly having a substrate having an upper surface and a lower surface, said method comprising: depositing a layer of copper on more than one surface of the upper surface and the lower surface of the substrate; patterning the layer of copper on the upper surface and the lower surface of the substrate to form at least one bond pad thereon; depositing at least one layer of gold metal on at least a portion of the layer of copper; connecting one end of a conductive lead of a TAB tape to the at least one layer of gold metal; and consuming a portion of the at least one layer of gold metal during the connecting of one end of a conductive lead of a TAB tape for connecting at least a portion of one end of the conductive lead of the TAB tape to at least a portion of the layer of copper. 7. A method of forming a semiconductor device assembly having a substrate having an upper surface and a lower surface, said method comprising: depositing a layer of copper on more than one desired surface of one surface of the upper surface and the lower surface of the substrate; patterning the layer of copper on at least one surface of the upper surface and the lower surface of the substrate to form at least one bond pad thereon; depositing at least one layer of gold metal on at least a portion of the layer of copper; connecting one of an end of a conductive lead of a TAB tape and a portion of a bond wire to the at least one layer of gold metal; and consuming a portion of the at least one layer of gold metal during the connecting of one end of a conductive lead of a TAB tape for connecting at least a portion of one end of the conductive lead of the TAB tape to at least a portion of the layer of copper.