A method of separating a lamination body with high yield without damaging the lamination body is provided. Further, a method of manufacturing a lightweight, flexible semiconductor device, which is thin in total is provided. The method of manufacturing the semiconductor device includes: a first step
A method of separating a lamination body with high yield without damaging the lamination body is provided. Further, a method of manufacturing a lightweight, flexible semiconductor device, which is thin in total is provided. The method of manufacturing the semiconductor device includes: a first step of laminating a metal layer, an oxide layer, a layer containing no hydrogen element, and a lamination body on a first substrate; a second step of forming a photocatalytic layer on a transparent substrate; and a third step of attaching the photocatalytic layer to the surface of the lamination body by using a first adhesive material after the first and second steps, separating the metal layer from the oxide layer, and irradiating light from a side of the transparent substrate so that an interface between the photocatalytic layer and the first adhesive material is separated to remove the first adhesive material.
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What is claimed is: 1. A method for manufacturing a semiconductor device comprising: forming a semiconductor element over a first substrate with a layer interposed therebetween; providing a second substrate over the semiconductor element with a photocatalytic layer interposed therebetween; peeling
What is claimed is: 1. A method for manufacturing a semiconductor device comprising: forming a semiconductor element over a first substrate with a layer interposed therebetween; providing a second substrate over the semiconductor element with a photocatalytic layer interposed therebetween; peeling the semiconductor element from the first substrate; and peeling the second substrate from the semiconductor element by irradiating the photocatalytic layer with a light. 2. A method for manufacturing a semiconductor device according to claim 1, wherein the first or the second substrate is a glass substrate. 3. A method for manufacturing a semiconductor device according to claim 1, wherein the photocatalytic layer is in contact with the second substrate. 4. A method for manufacturing a semiconductor device according to claim 1, wherein the photocatalytic layer contains one selected from the group consisting of titanium oxide, titanate, tantalate, niobate, CdS, and ZnS. 5. A method for manufacturing a semiconductor device according to claim 1, wherein the semiconductor element contains one selected from the group consisting of a thin film transistor, an organic semiconductor transistor, a diode, and an MIM element. 6. A method for manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is one selected from the group consisting of a TV set, a video camera, a digital camera, a goggle type display, a navigation system, an audio reproduction device, a laptop computer, a game machine, a mobile computer, a cellular phone, an electronic book, and an image reproduction device. 7. A method for manufacturing a semiconductor device comprising: forming a semiconductor element over a first substrate with a layer interposed therebetween; providing a second substrate over the semiconductor element with a photocatalytic layer and an adhesive layer interposed therebetween; peeling the semiconductor element from the first substrate; and peeling the second substrate from the semiconductor element by irradiating the photocatalytic layer with a light. 8. A method for manufacturing a semiconductor device according to claim 7, wherein the first or the second substrate is a glass substrate. 9. A method for manufacturing a semiconductor device according to claim 7, wherein the photocatalytic layer is in contact with the second substrate. 10. A method for manufacturing a semiconductor device according to claim 7, wherein the photocatalytic layer contains one selected from the group consisting of titanium oxide, titanate, tantalate, niobate, CdS, and ZnS. 11. A method for manufacturing a semiconductor device according to claim 7, wherein the adhesive layer contains one selected from the group consisting of an epoxy resin, a silicon resin, and an acrylic resin. 12. A method for manufacturing a semiconductor device according to claim 7, wherein the semiconductor element contains one selected from the group consisting of a thin film transistor, an organic semiconductor transistor, a diode, and an MIM element. 13. A method for manufacturing a semiconductor device according to claim 7, wherein the semiconductor device is one selected from the group consisting of a TV set, a video camera, a digital camera, a goggle type display, a navigation system, an audio reproduction device, a laptop computer, a game machine, a mobile computer, a cellular phone, an electronic book, and an image reproduction device. 14. A method for manufacturing a semiconductor device comprising: forming a semiconductor element over a first substrate with a layer interposed therebetween; providing a second substrate over the semiconductor element with a photocatalytic layer interposed therebetween; peeling the semiconductor element from the first substrate; and peeling the second substrate from the semiconductor element by irradiating the photocatalytic layer with a light from a side of the second substrate. 15. A method for manufacturing a semiconductor device according to claim 14, wherein the first or the second substrate is a glass substrate. 16. A method for manufacturing a semiconductor device according to claim 14, wherein the photocatalytic layer is in contact with the second substrate. 17. A method for manufacturing a semiconductor device according to claim 14, wherein the photocatalytic layer contains one selected from the group consisting of titanium oxide, titanate, tantalate, niobate, CdS, and ZnS. 18. A method for manufacturing a semiconductor device according to claim 14, wherein the semiconductor element contains one selected from the group consisting of a thin film transistor, an organic semiconductor transistor, a diode, and an MIM element. 19. A method for manufacturing a semiconductor device according to claim 14, wherein the semiconductor device is one selected from the group consisting of a TV set, a video camera, a digital camera, a goggle type display, a navigation system, an audio reproduction device, a laptop computer, a game machine, a mobile computer, a cellular phone, an electronic book, and an image reproduction device. 20. A method for manufacturing a semiconductor device comprising: forming a semiconductor element over a first substrate with a layer interposed therebetween; providing a second substrate over the semiconductor element with a photocatalytic layer and an adhesive layer interposed therebetween; peeling the semiconductor element from the first substrate; and peeling the second substrate from the semiconductor element by irradiating the photocatalytic layer with a light from a side of the second substrate. 21. A method for manufacturing a semiconductor device according to claim 20, wherein the first or the second substrate is a glass substrate. 22. A method for manufacturing a semiconductor device according to claim 20, wherein the photocatalytic layer is in contact with the second substrate. 23. A method for manufacturing a semiconductor device according to claim 20, wherein the photocatalytic layer contains one selected from the group consisting of titanium oxide, titanate, tantalate, niobate, CdS, and ZnS. 24. A method for manufacturing a semiconductor device according to claim 20, wherein the adhesive layer contains one selected from the group consisting of an epoxy resin, a silicon resin, and an acrylic resin. 25. A method for manufacturing a semiconductor device according to claim 20, wherein the semiconductor element contains one selected from the group consisting of a thin film transistor, an organic semiconductor transistor, a diode, and an MIM element. 26. A method for manufacturing a semiconductor device according to claim 20, wherein the semiconductor device is one selected from the group consisting of a TV set, a video camera, a digital camera, a goggle type display, a navigation system, an audio reproduction device, a laptop computer, a game machine, a mobile computer, a cellular phone, an electronic book, and an image reproduction device. 27. A method for manufacturing a semiconductor device comprising: forming a semiconductor element over a first substrate with a layer interposed therebetween; providing a second substrate over the semiconductor element with a photocatalytic layer interposed therebetween; peeling the semiconductor element from the first substrate; and peeling the second substrate from the semiconductor element by irradiating the photocatalytic layer with an ultraviolet light. 28. A method for manufacturing a semiconductor device according to claim 27, wherein the first or the second substrate is a glass substrate. 29. A method for manufacturing a semiconductor device according to claim 27, wherein the photocatalytic layer is in contact with the second substrate. 30. A method for manufacturing a semiconductor device according to claim 27, wherein the photocatalytic layer contains one selected from the group consisting of titanium oxide, titanate, tantalate, niobate, CdS, and ZnS. 31. A method for manufacturing a semiconductor device according to claim 27, wherein the semiconductor element contains one selected from the group consisting of a thin film transistor, an organic semiconductor transistor, a diode, and an MIM element. 32. A method for manufacturing a semiconductor device according to claim 27, wherein the semiconductor device is one selected from the group consisting of a TV set, a video camera, a digital camera, a goggle type display, a navigation system, an audio reproduction device, a laptop computer, a game machine, a mobile computer, a cellular phone, an electronic book, and an image reproduction device. 33. A method for manufacturing a semiconductor device comprising: forming a semiconductor element over a first substrate with a layer interposed therebetween; providing a second substrate over the semiconductor element with a photocatalytic layer and an adhesive layer interposed therebetween; peeling the semiconductor element from the first substrate; and peeling the second substrate from the semiconductor element by irradiating the photocatalytic layer with an ultraviolet light. 34. A method for manufacturing a semiconductor device according to claim 33, wherein the first or the second substrate is a glass substrate. 35. A method for manufacturing a semiconductor device according to claim 33, wherein the photocatalytic layer is in contact with the second substrate. 36. A method for manufacturing a semiconductor device according to claim 33, wherein the photocatalytic layer contains one selected from the group consisting of titanium oxide, titanate, tantalate, niobate, CdS, and ZnS. 37. A method for manufacturing a semiconductor device according to claim 33, wherein the adhesive layer contains one selected from the group consisting of an epoxy resin, a silicon resin and, an acrylic resin. 38. A method for manufacturing a semiconductor device according to claim 33, wherein the semiconductor element contains one selected from the group consisting of a thin film transistor, an organic semiconductor transistor, a diode, and an MIM element. 39. A method for manufacturing a semiconductor device according to claim 33, wherein the semiconductor device is one selected from the group consisting of a TV set, a video camera, a digital camera, a goggle type display, a navigation system, an audio reproduction device, a laptop computer, a game machine, a mobile computer, a cellular phone, an electronic book, and an image reproduction device. 40. A method for manufacturing a semiconductor device according to claim 1, wherein the layer includes at least one of a metal film, an oxide film and an anti-reduction film. 41. A method for manufacturing a semiconductor device according to claim 7, wherein the layer includes at least one of a metal film, an oxide film and an anti-reduction film. 42. A method for manufacturing a semiconductor device according to claim 14, wherein the layer includes at least one of a metal film, an oxide film and an anti-reduction film. 43. A method for manufacturing a semiconductor device according to claim 20, wherein the layer includes at least one of a metal film, an oxide film and an anti-reduction film. 44. A method for manufacturing a semiconductor device according to claim 27, wherein the layer includes at least one of a metal film, an oxide film and an anti-reduction film. 45. A method for manufacturing a semiconductor device according to claim 33, wherein the layer includes at least one of a metal film, an oxide film and an anti-reduction film.
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