초록 ▼

In a resist pattern forming method in which bake processing is performed at a temperature not lower than a glass transition temperature in order to obtain the desired sidewall angle, resist removable is difficult. Accordingly, in the resist pattern forming method of performing bake processing at a t

In a resist pattern forming method in which bake processing is performed at a temperature not lower than a glass transition temperature in order to obtain the desired sidewall angle, resist removable is difficult. Accordingly, in the resist pattern forming method of performing bake processing at a temperature not lower than a glass transition temperature, a process margin for resist removability cannot be ensured, so that there is the problem that it is impossible to compatibly realize both the formation of a resist pattern having the desired sidewall angle and the resist removability of the resist pattern. The invention aims to solve the problem. A resist pattern including a diazonaphthoquinone (DNQ)-novolac resin type of positive resist is formed, and the resist pattern is irradiated with light within the range of photosensitive wavelengths of a DNQ photosensitizer to perform bake processing on the resist pattern at a temperature not lower than the glass transition temperature of the resist pattern.

대표청구항 ▼

What is claimed is: 1. A method of fabricating a semiconductor device comprising: forming a semiconductor film over an insulating surface; forming a gate insulating film over the semiconductor film; forming one or more conductive films over the gate insulating film; forming a resist film comprising

What is claimed is: 1. A method of fabricating a semiconductor device comprising: forming a semiconductor film over an insulating surface; forming a gate insulating film over the semiconductor film; forming one or more conductive films over the gate insulating film; forming a resist film comprising a resist containing a photosensitizer, the resist film being formed over the one or more conductive films; exposing the resist film; after the exposing, developing the resist film to form a resist pattern; after the developing, irradiating the resist pattern with light within a range of photosensitive wavelengths of the photosensitizer; baking the resist pattern at a temperature not lower than a glass transition temperature of the resist containing the photosensitizer; performing a dry etching processing for etching the one or more conductive films to form one or more gate electrodes; and removing the resist pattern. 2. A method of fabricating a semiconductor device according to claim 1, wherein the photosensitizer is a diazonaphthoquinone. 3. A method of fabricating a semiconductor device according to claim 1, wherein the resist containing the photosensitizer is a diazonaphthoquinone-novolac resin type of resist, and the photosensitizer is a diazonaphthoquinone. 4. A method of fabricating a semiconductor device according to claim 1, wherein the range of photosensitive wavelengths of the photosensitizer are from 350 nm to 450 nm. 5. A method of fabricating a semiconductor device according to claim 1, wherein the light irradiated to the resist pattern is at least one of a g-line, an h-line and an i-line of a super high pressure mercury vapor lamp. 6. A method of fabricating a semiconductor device according to claim 1, wherein at least one of the one or more gate electrodes have a tapered portion. 7. A method of fabricating a semiconductor device according to claim 1, wherein the resist is a positive resist. 8. A method of fabricating a semiconductor device comprising: forming a semiconductor film over an insulating surface; forming a gate insulating film over the semiconductor film; forming a first conductive film over the gate insulating film; forming a second conductive film over the first conductive film; forming a resist film comprising a resist containing a photosensitizer, the resist film being formed over the second conductive film; exposing the resist film; after the exposing, developing the resist film to form a resist pattern; after the developing, irradiating the resist pattern with light within a range of photosensitive wavelengths of the photosensitizer; baking the resist pattern at a temperature not lower than a glass transition temperature of the resist containing the photosensitizer; performing a first dry etching processing for etching the second conductive film; performing a second dry etching processing for etching the first conductive film; performing a third dry etching processing for etching the first conductive film and the second conductive film; and removing the resist pattern, wherein a first gate electrode and a second gate electrode are formed from the first conductive film and the second conductive film respectively by the first to third dry etching processings, wherein the first gate electrode has a first shape tapered portion and the second gate electrode has a second shape tapered portion after the third dry etching processing, and wherein the first gate electrode extends beyond edges of the second gate electrode after the third dry etching processing. 9. A method of fabricating a semiconductor device according to claim 8, wherein the photosensitizer is a diazonaphthoquinone. 10. A method of fabricating a semiconductor device according to claim 8, wherein the resist containing the photosensitizer is a diazonaphthoquinone-novolac resin type of resist, and the photosensitizer is a diazonaphthoquinone. 11. A method of fabricating a semiconductor device according to claim 8, wherein the range of photosensitive wavelengths of the photosensitizer are from 350 nm to 450 nm. 12. A method of fabricating a semiconductor device according to claim 8, wherein the light irradiated to the resist pattern is at least one of a g-line, an h-line and an i-line of a super high pressure mercury vapor lamp. 13. A method of fabricating a semiconductor device according to claim 8, wherein the resist is a positive resist. 14. A method of fabricating a semiconductor device comprising: forming a semiconductor film over an insulating surface; forming a gate insulating film over the semiconductor film; forming a first conductive film over the gate insulating film; forming a second conductive film over the first conductive film; forming a resist film comprising a resist containing a photosensitizer, the resist film being formed over the second conductive film; exposing the resist film; after the exposing, developing the resist film to form a resist pattern; after the developing, irradiating the resist pattern with light within a range of photosensitive wavelengths of the photosensitizer; baking the resist pattern at a temperature not lower than a glass transition temperature of the resist containing the photosensitizer; performing a first dry etching processing for etching at least the second conductive film; performing a second dry etching processing for etching at least the first conductive film; and removing the resist pattern, wherein a first gate electrode and a second gate electrode are formed from the first conductive film and the second conductive film respectively after the first and the second dry etching processings. 15. A method of fabricating a semiconductor device according to claim 14, wherein the photosensitizer is a diazonaphthoquinone. 16. A method of fabricating a semiconductor device according to claim 14, wherein the resist containing the photosensitizer is a diazonaphthoquinone-novolac resin type of resist, and the photosensitizer is a diazonaphthoquinone. 17. A method of fabricating a semiconductor device according to claim 16, wherein the range of photosensitive wavelengths of the photosensitizer are from 350 nm to 450 nm. 18. A method of fabricating a semiconductor device according to claim 14, wherein the light irradiated to the resist pattern is at least one of a g-line, an h-line and an i-line of a super high pressure mercury vapor lamp. 19. A method of fabricating a semiconductor device according to claim 14, wherein at least the second gate electrode has a tapered portion. 20. A method of fabricating a semiconductor device according to claim 14, wherein the first gate electrode extends beyond edges of the second gate electrode after the third dry etching processing. 21. A method of fabricating a semiconductor device according to claim 14, wherein the resist is a positive resist.