Ferroelectric capacitor circuit for sensing hydrogen gas
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-029/769
H01L-021/00
H01L-027/148
출원번호
US-0239459
(2005-09-23)
등록번호
US-7345331
(2008-03-18)
발명자
/ 주소
Ramer,Orville G.
Billette,Stuart C.
출원인 / 주소
United States of America as represented by the Secretary of the Navy
대리인 / 주소
Tarlano,John
인용정보
피인용 횟수 :
0인용 특허 :
9
초록▼
A ferroelectric capacitor circuit for sensing hydrogen gas having a closed integrated circuit package, a ferroelectric capacitor within the closed integrated circuit package, the ferroelectric capacitor having a bismuth oxide based ferroelectric layer being able to absorb hydrogen gas that is within
A ferroelectric capacitor circuit for sensing hydrogen gas having a closed integrated circuit package, a ferroelectric capacitor within the closed integrated circuit package, the ferroelectric capacitor having a bismuth oxide based ferroelectric layer being able to absorb hydrogen gas that is within the closed integrated circuit package, absorbed hydrogen gas chemically reducing a portion of the bismuth oxide based ferroelectric layer into bismuth metal, the ferroelectric capacitor having a ferroelectric voltage, the ferroelectric voltage having a voltage strength, and means for measuring a decrease in the voltage strength of the ferroelectric voltage of the ferroelectric capacitor.
대표청구항▼
What is claimed is: 1. A ferroelectric capacitor circuit for sensing hydrogen gas, comprising: (a) a closed integrated circuit package; (b) a ferroelectric capacitor within the closed integrated circuit package, the ferroelectric capacitor comprising a bismuth oxide based ferroelectric layer betwee
What is claimed is: 1. A ferroelectric capacitor circuit for sensing hydrogen gas, comprising: (a) a closed integrated circuit package; (b) a ferroelectric capacitor within the closed integrated circuit package, the ferroelectric capacitor comprising a bismuth oxide based ferroelectric layer between a first capacitor plate and a second capacitor plate, an outer perimeter of the bismuth oxide based ferroelectric layer being exposed within the closed integrated circuit package, the outer perimeter of the bismuth oxide based ferroelectric layer being able to absorb hydrogen gas that is within the closed integrated circuit package, absorbed hydrogen gas chemically reducing a portion of the bismuth oxide based ferroelectric layer into bismuth metal, the ferroelectric capacitor having a stored ferroelectric voltage, the stored ferroelectric voltage having a voltage strength; (c) an electrometer for measuring a decrease in the voltage strength of the stored ferroelectric voltage of the ferroelectric capacitor; and (d) a DC voltage source for storing the stored ferroelectric voltage in the ferroelectric capacitor. 2. A ferroelectric capacitor circuit for sensing hydrogen gas, comprising: (a) a closed integrated circuit package; (b) a ferroelectric capacitor within the closed integrated circuit package, the ferroelectric capacitor comprising a bismuth oxide based ferroelectric layer between a first capacitor plate and a second capacitor plate, an outer perimeter of the bismuth oxide based ferroelectric layer being exposed within the closed integrated circuit package, the outer perimeter of the bismuth oxide based ferroelectric layer being able to absorb hydrogen gas that is within the closed integrated circuit package, absorbed hydrogen gas chemically reducing a portion of the bismuth oxide based ferroelectric layer into bismuth metal, the ferroelectric capacitor having a ferroelectric voltage, the ferroelectric voltage having a voltage strength, wherein the bismuth oxide based ferroelectric layer is a Bi2SrTa72Nb28O9 ferroelectric layer; and (c) means for measuring a decrease in the voltage strength of the ferroelectric voltage of the ferroelectric capacitor. 3. A ferroelectric capacitor circuit for sensing hydrogen gas, comprising: (a) a closed integrated circuit package; (b) a ferroelectric capacitor within the closed integrated circuit package, the ferroelectric capacitor comprising a Bi2SrTa72Nb28O9 ferroelectric layer between a first capacitor plate and a second capacitor plate, an outer perimeter of the bismuth oxide based ferroelectric layer being exposed within the closed integrated circuit package, the outer perimeter of the bismuth oxide based ferroelectric layer being able to absorb hydrogen gas that is within the closed integrated circuit package, absorbed hydrogen gas chemically reducing a portion of the bismuth oxide based ferroelectric layer into bismuth metal, the ferroelectric capacitor having a ferroelectric voltage, the ferroelectric voltage having a voltage strength; and (c) means for measuring a decrease in the voltage strength of the ferroelectric voltage of the ferroelectric capacitor. 4. A method for sensing hydrogen gas in an environment, comprising: (a) placing a ferroelectric capacitor in the environment, the ferroelectric capacitor comprising a bismuth oxide based ferroelectric layer between a first capacitor plate and a second capacitor plate, an outer perimeter of the bismuth oxide based ferroelectric layer being exposed to the environment, the outer perimeter of the bismuth oxide based ferroelectric layer being able to absorb hydrogen gas that is in the environment, absorbed hydrogen gas chemically reducing a portion of the bismuth oxide based ferroelectric layer into bismuth metal; (b) giving the ferroelectric capacitor a particular ferroelectric voltage; and (c) measuring voltage strengths of the ferroelectric voltage of the ferroelectric capacitor over time, to detect the chemical reduction of the bismuth oxide based ferroelectric layer into bismuth metal by the hydrogen gas.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (9)
Ramer O. Glenn ; Robinson David A. ; Drab John J., Bismuth layered structure pyroelectric detectors.
Cuchiaro Joseph D. ; Furuya Akira,JPX ; Paz de Araujo Carlos A. ; Miyasaka Yoichi,JPX, Ferroelectric integrated circuit having low sensitivity to hydrogen exposure and method for fabricating same.
Camanzi Alberto (Tor Lupara ITX) Sberveglieri Giorgio (Cavriago ITX), Solid-state sensor for determining hydrogen and/or NOx concentration and the method for its preparation
상세보기
※ AI-Helper는 부적절한 답변을 할 수 있습니다.