A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, a GOLD structure or an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel portion is connected to the pixel TFT through a hole bored in at least a protective insulation film
A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, a GOLD structure or an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel portion is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, and in an interlayer insulating film disposed on the insulation film in close contact therewith. These process steps use 6 to 8 photo-masks.
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What is claimed is: 1. A portable information terminal comprising: an image input section and an image output section on a main body; a display device comprising a pixel section over a substrate, operationally connected to the image input section and the image output section, wherein the pixel sect
What is claimed is: 1. A portable information terminal comprising: an image input section and an image output section on a main body; a display device comprising a pixel section over a substrate, operationally connected to the image input section and the image output section, wherein the pixel section comprises: a pixel TFT disposed in the pixel section; and a driver circuit comprising a p-channel TFT and an n-channel TFT, over the substrate; a first interlayer insulating film comprising an inorganic insulating material over a gate electrode of the pixel TFT; a second interlayer insulating film comprising an organic insulating material over the first interlayer insulating film; and a pixel electrode over the second interlayer insulating film, and electrically connected with the pixel TFT through an opening in the first and second interlayer insulating films, wherein the p-channel TFT of the driver circuit comprises a channel forming region a source region and a drain region in contact with the channel forming region, wherein the p-channel TFT of the driver circuit does not have a LDD region, wherein the n-channel TFT of the driver circuit comprises a channel forming region, an n-type impurity region of a first concentration which forms at least one LDD region in contact with the channel forming region and partly overlapping a gate electrode of the n-channel TFT, and a source region and a drain region in contact with the at least one LDD region, wherein the pixel TFT comprises a channel forming region, at least one LDD region in contact with the channel forming region and not overlapping the gate electrode of the pixel TFT, and a source region and a drain region in contact with the at least one LDD region. 2. A portable information terminal comprising: an image input section and an image output section on a main body; a display device comprising a pixel section over a substrate, operationally connected to the image input section and the image output section, wherein the pixel section comprises: a pixel TFT disposed in the pixel section; and a driver circuit comprising a p-channel TFT and an n-channel TFT over the first substrate; a first interlayer insulating film comprising an inorganic insulating material over a gate electrode of the pixel TFT; a second interlayer insulating film comprising an organic insulating material over the first interlayer insulating film; and a pixel electrode over the second interlayer insulating film, and electrically connected with the pixel TFT through an opening in the first and second interlayer insulating films, at least one columnar spacer covering the opening; a second substrate having a transparent conductive film stuck to the first substrate through the at least one columnar spacer; and a liquid crystal sandwiched between the first and second substrates, wherein the p-channel TFT of the driver circuit comprises a channel forming region a source region and a drain region in contact with the channel forming region, wherein the p-channel TFT of the driver circuit does not have a LDD region, wherein the n-channel TFT of the driver circuit comprises a channel forming region, an n-type impurity region of a first concentration which forms at least one LDD region in contact with the channel forming region and partly overlapping a gate electrode of the n-channel TFT, and a source region and a drain region in contact with the at least one LDD region, wherein the pixel TFT comprises a channel forming region, at least one LDD region in contact with the channel forming region and not overlapping the gate electrode of the pixel TFT, and a source region and a drain region in contact with the at least one LDD region. 3. A portable information terminal according to claim 2 wherein the columnar spacer is formed over the p-channel TFT and the n-channel TFT of the driver circuit. 4. A portable information terminal according to claim 2 wherein the columnar spacer is formed to cover at least a source wiring or a drain wiring of the p-channel TFT and the n-channel TFT of the driver circuit. 5. A portable information terminal comprising: an image input section and an image output section on a main body; a display device comprising a pixel section over a substrate, operationally connected to the image input section and the image output section, wherein the pixel section comprises: a pixel TFT disposed in the pixel section; and a driver circuit comprising a p-channel TFT and an n-channel TFT over the substrate, a first interlayer insulating film comprising an inorganic insulating material formed over the pixel section; a second interlayer insulating film comprising an organic insulating material over the first interlayer insulating film; a pixel electrode over the second interlayer insulating film, and in connected to the pixel TFT through an opening formed in the first and second interlayer insulating films; a source wiring over the second interlayer insulating film; an alignment film formed over the pixel electrode and the source wiring; and a liquid crystal interposed between the alignment film and an opposed substrate, wherein the p-channel TFT of the driver circuit comprises a channel forming region a source region and a drain region in contact with the channel forming region, wherein the p-channel TFT of the driver circuit does not have a LDD region, wherein the n-channel TFT of the driver circuit comprises a channel forming region, an n-type impurity region of a first concentration which forms at least one LDD region in contact with the channel forming region and partly overlapping a gate electrode of the n-channel TFT, and a source region and a drain region in contact with the at least one LDD region, wherein the pixel TFT comprises a channel forming region, at least one LDD region in contact with the channel forming region and not overlapping the gate electrode of the pixel TFT, and a source region and a drain region in contact with the at least one LDD region, wherein the pixel electrode and the source wiring are formed, simultaneously. 6. A portable information terminal according to claim 1, wherein the pixel electrode has a light reflective surface. 7. A portable information terminal according to claim 2, wherein the pixel electrode has a light reflective surface. 8. A portable information terminal according to claim 5, wherein the pixel electrode has a light reflective surface. 9. A digital camera comprising: an image reception unit; and a display device comprising a pixel section over a substrate, operationally connected to the image reception unit, wherein the pixel section comprises: a pixel TFT disposed in the pixel section; and a driver circuit comprising a p-channel TFT and an n-channel TFT, over the substrate; a first interlayer insulating film comprising an inorganic insulating material over a gate electrode of the pixel TFT; a second interlayer insulating film comprising an organic insulating material over the first interlayer insulating film; and a pixel electrode over the second interlayer insulating film, and electrically connected with the pixel TFT through an opening in the first and second interlayer insulating films, wherein the p-channel TFT of the driver circuit comprises a channel forming region a source region and a drain region in contact with the channel forming region, wherein the p-channel TFT of the driver circuit does not have a LDD region, wherein the n-channel TFT of the driver circuit comprises a channel forming region, an n-type impurity region of a first concentration which forms at least one LDD region in contact with the channel forming region and partly overlapping a gate electrode of the n-channel TFT, and a source region and a drain region in contact with the at least one LDD region, wherein the pixel TFT comprises a channel forming region, at least one LDD region in contact with the channel forming region and not overlapping the gate electrode of the pixel TFT, and a source region and a drain region in contact with the at least one LDD region. 10. A digital camera comprising: an image reception unit; and a display device comprising a pixel section over a substrate, operationally connected to the image reception unit, wherein the pixel section comprises: a pixel TFT disposed in pixel section; and a driver circuit comprising a p-channel TFT and an n-channel TFT over the first substrate; a first interlayer insulating film comprising an inorganic insulating material over a gate electrode of the pixel TFT; a second interlayer insulating film comprising an organic insulating material over the first interlayer insulating film; and a pixel electrode over the second interlayer insulating film, and electrically connected with the pixel TFT through an opening in the first and second interlayer insulating films, at least one columnar spacer covering the opening; a second substrate having a transparent conductive film stuck to the first substrate through the at least one columnar spacer; and a liquid crystal sandwiched between the first and second substrates, wherein the p-channel TFT of the driver circuit comprises a channel forming region a source region and a drain region in contact with the channel forming region, wherein the p-channel TFT of the driver circuit does not have a LDD region, wherein the n-channel TFT of the driver circuit comprises a channel forming region, an n-type impurity region of a first concentration which forms at least one LDD region in contact with the channel forming region and partly overlapping a gate electrode of the n-channel TFT, and a source region and a drain region in contact with the at least one LDD region, wherein the pixel TFT comprises a channel forming region, at least one LDD region in contact with the channel forming region and not overlapping the gate electrode of the pixel TET, and a source region and a drain region in contact with the at least one LDD region. 11. A digital camera according to claim 10 wherein the columnar spacer is formed over the p-channel TFT and the n-channel TFT of the driver circuit. 12. A digital camera according to claim 10 wherein the columnar spacer is formed to cover at least a source wiring or a drain wiring of the p-channel TFT and the n-channel TFT of the driver circuit. 13. A digital camera comprising: an image reception unit; and a display device comprising a pixel section over a substrate, operationally connected to the image reception unit, wherein the pixel section comprises: a pixel TFT disposed in the pixel section; and a driver circuit comprising a p-channel TFT and an n-channel TFT over the substrate, a first interlayer insulating film comprising an inorganic insulating material formed over the pixel section; a second interlayer insulating film comprising an organic insulating material over the first interlayer insulating film; a pixel electrode over the second interlayer insulating film, and in connected to the pixel TFT through an opening formed in the first and second interlayer insulating films; a source wiring over the second interlayer insulating film; an alignment film formed over the pixel electrode and the source wiring; and a liquid crystal interposed between the alignment film and an opposed substrate, wherein the p-channel TFT of the driver circuit comprises a channel forming region a source region and a drain region in contact with the channel forming region, wherein the p-channel TFT of the driver circuit does not have a LDD region, wherein the n-channel TFT of the driver circuit comprises a channel forming region, an n-type impurity region of a first concentration which forms at least one LDD region in contact with the channel forming region and partly overlapping a gate electrode of the n-channel TFT, and a source region and a drain region in contact with the at least one LDD region, wherein the pixel TFT comprises a channel forming region, at least one LDD region in contact with the channel forming region and not overlapping the gate electrode of the pixel TFT, and a source region and a drain region in contact with the at least one LDD region, wherein the pixel electrode and the source wiring are formed, simultaneously. 14. A digital camera according to claim 9, wherein the pixel electrode has a light reflective surface. 15. A digital camera according to claim 10, wherein the pixel electrode has a light reflective surface. 16. A digital camera according to claim 13, wherein the pixel electrode has a light reflective surface. 17. A semiconductor device comprising: a pixel TFT disposed in a pixel section over a substrate; and a driver circuit comprising a p-channel TFT and an n-channel TFT, over the substrate; a first interlayer insulating film comprising an inorganic insulating material over a gate electrode of the pixel TFT; a second interlayer insulating film comprising an organic insulating material over the first interlayer insulating film; a pixel electrode over the second interlayer insulating film, and electrically connected with the pixel TFT through an opening in the first and second interlayer insulating films; and an external input/output terminal over the substrate, wherein the external input/output terminal comprising a same material of the pixel electrode; a flexible printed circuit electrically connected to the external input/output terminal through an anisotropic conductive adhesive comprising an adhesive and a conductive particle, wherein the p-channel TFT of the driver circuit comprises a channel forming region a source region and a drain region in contact with the channel forming region, wherein the p-channel TFT of the driver circuit does not have a LDD region, wherein the n-channel TFT of the driver circuit comprises a channel forming region, an n-type impurity region of a first concentration which forms at least one LDD region in contact with the channel forming region and partly overlapping a gate electrode of the n-channel TFT, and a source region and a drain region in contact with the at least one LDD region, wherein the pixel TFT comprises a channel forming region, at least one LDD region in contact with the channel forming region and not overlapping the gate electrode of the pixel TFT, and a source region and a drain region in contact with the at least one LDD region. 18. A semiconductor device comprising: a pixel TFT disposed in a pixel section over a first substrate; a driver circuit comprising a p-channel TFT and an n-channel TFT over the first substrate; a first interlayer insulating film comprising an inorganic insulating material over a gate electrode of the pixel TFT; a second interlayer insulating film comprising an organic insulating material over the first interlayer insulating film; and a pixel electrode over the second interlayer insulating film, and electrically connected with the pixel TFT through an opening in the first and second interlayer insulating films, at least one columnar spacer covering the opening; a second substrate having a transparent conductive film stuck to the first substrate through the at least one columnar spacer; and a liquid crystal sandwiched between the first and second substrates; an external input/output terminal over the substrate, wherein the external input/output terminal comprising a same material of the pixel electrode; a flexible printed circuit electrically connected to the external input/output terminal through an anisotropic conductive adhesive comprising an adhesive and a conductive particle, wherein the p-channel TFT of the driver circuit comprises a channel forming region a source region and a drain region in contact with the channel forming region, wherein the p-channel TFT of the driver circuit does not have a LDD region, wherein the n-channel TFT of the driver circuit comprises a channel forming region, an n-type impurity region of a first concentration which forms at least one LDD region in contact with the channel forming region and partly overlapping a gate electrode of the n-channel TFT, and a source region and a drain region in contact with the at least one LDD region, wherein the pixel TFT comprises a channel forming region, at least one LDD region in contact with the channel forming region and not overlapping the gate electrode of the pixel TFT, and a source region and a drain region in contact with the at least one LDD region. 19. A semiconductor device according to claim 18 wherein the columnar spacer is formed over the p-channel TFT and the n-channel TFT of the driver circuit. 20. A semiconductor device according to claim 18 wherein the columnar spacer is formed to cover at least a source wiring or a drain wiring of the p-channel TFT and the n-channel TFT of the driver circuit. 21. A semiconductor device according to claim 17 wherein the semiconductor device is in an apparatus selected from a group consisting of a personal computer, a video camera, a portable information terminal, a digital camera, a digital video disc player, an electronic game machine and a projector. 22. A semiconductor device according to claim 18 wherein the semiconductor device is in an apparatus selected from a group consisting of a personal computer, a video camera, a portable information terminal, a digital camera, a digital video disc player, an electronic game machine and a projector. 23. A semiconductor device comprising: a pixel TFT having disposed in a pixel section over a substrate; a driver circuit comprising a p-channel TFT and an n-channel TFT over the substrate, a first interlayer insulating film comprising an inorganic insulating material formed over the pixel section; a second interlayer insulating film comprising an organic insulating material over the first interlayer insulating film; a pixel electrode over the second interlayer insulating film, and connected to the pixel TFT through an opening formed in the first and second interlayer insulating films; a wiring over the second interlayer insulating film; an alignment film formed over the pixel electrode and the source wiring; and a liquid crystal interposed between the alignment film and an opposed substrate; an external input/output terminal over the substrate, wherein the external input/output terminal comprising a same material of the wiring; a flexible printed circuit electrically connected to the external input/output terminal through an anisotropic conductive adhesive comprising an adhesive and a conductive particle, wherein the p-channel TFT of the driver circuit comprises a channel forming region a source region and a drain region in contact with the channel forming region, wherein the p-channel TFT of the driver circuit does not have a LDD region, wherein the n-channel TFT of the driver circuit comprises a channel forming region, an n-type impurity region of a first concentration which forms at least one LDD region in contact with the channel forming region and partly overlapping a gate electrode of the n-channel TFT, and a source region and a drain region in contact with the at least one LDD region, wherein the pixel TFT comprises a channel forming region, at least one LDD region in contact with the channel forming region and not overlapping the gate electrode of the pixel TFT, and a source region and a drain region in contact with the at least one LDD region, wherein the pixel electrode and the wiring are formed, simultaneously. 24. A semiconductor device according to claim 17, wherein the pixel electrode has a light reflective surface. 25. A semiconductor device according to claim 18, wherein the pixel electrode has a light reflective surface. 26. A semiconductor device according to claim 23, wherein the pixel electrode has a light reflective surface. 27. A semiconductor device according to claim 23 wherein the semiconductor device is in an apparatus selected from a group consisting of a personal computer, a video camera, a portable information terminal, a digital camera, a digital video disc player, an electronic game machine and a projector.
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