Infrared radiation image having sub-pixelization and detector interdigitation
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
G01J-005/22
G01J-005/20
출원번호
US-0206937
(2005-08-17)
등록번호
US-7351972
(2008-04-01)
발명자
/ 주소
D'Souza,Arvind I
Stapelbroek,Maryn G.
Dawson,Larry C.
Molyneux,Dale E.
출원인 / 주소
DRS Sensors & Targeting Systems, Inc.
대리인 / 주소
Sonnenschein Nath & Rosenthal LLP
인용정보
피인용 횟수 :
7인용 특허 :
11
초록▼
An infrared radiation ("IR") focal plane array ("FPA") imager includes a detector array chip containing pixels having substantially one-hundred percent operability. Each of the pixels contains a plurality of interdigitated sub-detectors, where the sub-detectors are selectively operable to provide fo
An infrared radiation ("IR") focal plane array ("FPA") imager includes a detector array chip containing pixels having substantially one-hundred percent operability. Each of the pixels contains a plurality of interdigitated sub-detectors, where the sub-detectors are selectively operable to provide for collection of photogenerated minority charges representative of all or substantially all of the IR radiation absorbed by the detector array chip of the FPA imager.
대표청구항▼
What is claimed is: 1. A pixel for use in a detector array of a focal plane array imager, the pixel comprising: a plurality of interdigitated sub-detectors, each of the sub-detectors includes a plurality of minority charge collectors and a respective one of a plurality of metal traces to which each
What is claimed is: 1. A pixel for use in a detector array of a focal plane array imager, the pixel comprising: a plurality of interdigitated sub-detectors, each of the sub-detectors includes a plurality of minority charge collectors and a respective one of a plurality of metal traces to which each of the collectors in the respective sub-detector is coupled, each of the minority charge collectors is included in no more than a single sub-detector, wherein each of the sub-detectors is selectively operable (i) in a selected mode to collect minority charges and (ii) in a deselected mode to act as an open circuit, wherein the sub-detectors are interdigitated in the pixel such that, if a first of the sub-detectors is deselected, the selected sub-detector or sub-detectors in the pixel collect approximately 91 percent or more of minority charges generated in the pixel resulting from absorption of optical energy in the pixel that would have been collected if each of the sub-detectors had been selected, and wherein the collectors of each of the sub-detectors and the respective metal trace coupling each of the collectors of each of the sub-detectors collectively follow a substantially spiraling configuration starting from an origin point in the pixel to provide that the sub-detectors have a spiraling symmetry and are substantially circularly-shaped. 2. The pixel of claim 1, wherein the minority charge collectors are at least one of a p/n junction collection diode and a n/p junction collection diode. 3. The pixel of claim 1, wherein the optical energy is infrared energy. 4. The pixel of claim 1, wherein the sub-detectors are interdigitated according to at least one of expected optical spot distribution, expected diffusion length of minority charge carriers generated from the absorbed optical energy and probability of collection of the minority charges by the collectors based on locations of the collectors in the pixel in relation to locations of optical energy absorption in the pixel. 5. The pixel of claim 1, wherein the collectors constitute a plurality of sets of collectors, wherein each of the collectors in a collector set is spaced at a same radial distance from the origin point and wherein each of the collector sets is spaced at a different radial distance from the origin point. 6. The pixel of claim 1, wherein the pixel corresponds to a horizontal portion of a detector array chip having a width W and a length L, and wherein the radial distance of any of the collectors from the origin point of the pixel does not exceed about one quarter of W or L. 7. The pixel of claim 1, wherein the origin point is the center of the pixel. 8. The pixel of claim 7, wherein the collectors constitute a plurality of sets of collectors, wherein each of the collectors in a collector set is spaced at a same radial distance from the origin point and wherein each of the collector sets is spaced at a different radial distance from the origin point. 9. The pixel of claim 7, where at least four of the collectors are at the same radial distance from the center of the pixel. 10. A focal plane array ("FPA") in an infrared imager, wherein the FPA contains a plurality of pixels, wherein each of the pixels comprises: a plurality of interdigitated sub-detectors, each of the sub-detectors includes a plurality of minority charge collectors and a respective one of a plurality of metal traces to which each of the collectors in the respective sub-detector is coupled, each of the minority charge collectors is included in no more than a single sub-detector, wherein each of the sub-detectors is selectively operable (i) in a selected mode to collect minority charges and (ii) in a deselected mode to act as an open circuit, wherein the sub-detectors are interdigitated in each of the pixels such that, if a first of the sub-detectors is deselected, the selected sub-detector or sub-detectors in the pixel collect approximately 91 percent or more of minority charges generated in the pixel resulting from absorption of optical energy in the pixel that would have been collected if each of the sub-detectors had been selected, and wherein the collectors of each of the sub-detectors and the respective metal trace coupling each of the collectors of each of the sub-detectors collectively follow a substantially spiraling configuration starting from an origin point in the pixel to provide that the sub-detectors have a spiraling symmetry and are substantially circularly-shaped. 11. The imager of claim 10, wherein the sub-detectors in each of the pixels are interdigitated according to at least one of expected optical spot distribution, expected diffusion length of minority charge carriers generated from the absorbed optical energy and probability of collection of the minority charges by the collectors based on locations of the collectors in the pixel in relation to locations of optical energy absorption in the pixel. 12. A method of imaging a scene comprising: providing a focal plane array ("FPA") including a plurality of pixels, wherein each of the pixels in the FPA includes: a plurality of interdigitated sub-detectors, each of the sub-detectors includes a plurality of minority charge collectors and a respective one of a plurality of metal traces to which each of the collectors in the respective sub-detector is coupled, each of the minority charge collectors is included in no more than a single sub-detector, wherein each of the sub-detectors is selectively operable (i) in a selected mode to collect minority charges and (ii) in a deselected mode to act as an open circuit; operating a sub-detector in the FPA having an inoperable minority charge collector in the deselected mode and operating all other sub-detectors in the selected mode; and for each of the pixels in the FPA, collecting at the sub-detectors operating in selected mode approximately 91 percent or more of minority charges generated resulting from absorption of optical energy in the pixel that would have been collected if each of the sub-detectors had been selected, and wherein the collectors of each of the sub-detectors and the respective metal trace coupling each of the collectors of each of the sub-detectors collectively follow a substantially spiraling configuration starting from an origin point in the pixel to provide that the sub-detectors have a spiraling symmetry and are substantially circularly-shaped. 13. The method of claim 12 further comprising: for each of the pixels in the FPA, after an integration interval summing the minority charges collected at the sub-detectors operating in selected mode. 14. The method of claim 12, wherein the minority charge collectors are at least one of a p/n junction collection diode and a n/p junction collection diode. 15. The method of claim 12, wherein the optical energy is infrared energy.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (11)
Hynecek Jaroslav, CMOS image sensor based on four transistor photocell.
Wood Roland A. (Bloomington MN) Higashi Robert E. (Shorewood MN) Rhodes Michael L. (Richfield MN), Infrared radiation imaging array with compound sensors forming each pixel.
William J. Hamilton, Jr. ; Michael Ray ; Eli E. Gordon ; Christopher L. Fletcher ; Ronald W. Berry, Monolithic microelectronic array structure having substrate islands and its fabrication.
D'Souza, Arvind I; Stapelbroek, Maryn G; Dawson, Larry C; Molyneux, Dale E, Infrared radiation imager having sub-pixelization and detector interdigitation.
Cloud, Eugene L.; Rakes, Alan; Bailey, John, System and method for identifying non-cooperative pulsed radiation sources in a field-of-view of an imaging sensor.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.