초록 ▼

A composition comprising a siloxane resin, a silicon compound substantially consisting of silicon, carbon and hydrogen, wherein the number ratio of carbon to silicon atoms forming an--X--bond (wherein X is (C)m (where m is an integer in the range of from 1 to 3), or a substituted or unsubstituted ar

A composition comprising a siloxane resin, a silicon compound substantially consisting of silicon, carbon and hydrogen, wherein the number ratio of carbon to silicon atoms forming an--X--bond (wherein X is (C)m (where m is an integer in the range of from 1 to 3), or a substituted or unsubstituted aromatic group with 9 or less carbon atoms) in the main chain of one molecule is in the range of from 2:1 to 12:1, and a solvent, is subjected to a heat treatment to form a low dielectric constant film. Accordingly, a low dielectric constant film having excellent resistance against chemicals and excellent moisture resistance is provided. A semiconductor integrated circuit having a fast response can be produced by using the film.

대표청구항 ▼

What is claimed is: 1. A composition comprising: a siloxane resin prepared by heating a mixture containing tetraalkoxysilane, an alkyltrialkoxysilane, and/or a trialkoxysilane, and a solvent, followed by vaporizing a predetermined amount of the alcohol produced by the reaction of the tetraalkoxysil

What is claimed is: 1. A composition comprising: a siloxane resin prepared by heating a mixture containing tetraalkoxysilane, an alkyltrialkoxysilane, and/or a trialkoxysilane, and a solvent, followed by vaporizing a predetermined amount of the alcohol produced by the reaction of the tetraalkoxysilane, an alkyltrialkoxysilane, and/or a trialkoxysilane; a silicon compound substantially consisting of silicon, carbon and hydrogen, wherein the number ratio of carbon forming an--X--bond (wherein X is (C)m (where m is an integer in the range of 2 or 3), or a substituted or unsubstituted aromatic group with 9 or less carbon atoms) to silicon atoms in the main chain of one molecule is in the range of from 2:1 to 12:1; a dissipating agent for forming pores, said dissipating agent comprising a substance that loses its weight by 5% by weight or more at 150�� C. and by 90% by weight or more at 400�� C. when heated up at a rate of 10�� C./min from usual temperature; and the balance being a solvent. 2. A composition according to claim 1, wherein said silicon compound has a structure represented by formula (2): (wherein R4 and R5 are each, same or different, H, an aliphatic hydrocarbon group with 1 to 3 carbon atoms, or a substituted or unsubstituted aromatic hydrocarbon group with 6 to 9 carbon atoms; R6 is an aliphatic hydrocarbon group with 1 to 3 carbon atoms, or a substituted or unsubstituted phenylene group; and p is an integer in the range of from 20 to 1,000). 3. A composition according to claim 1, wherein said siloxane resin has a structure represented by formula (3): (wherein R1, R2, and R3 are each, same or different, hydrogen, fluorine, a methyl group or an--O--group; and n is an integer in the range of from 5 to 1,000). 4. A composition according to claim 1, wherein said siloxane resin is obtained: by subjecting to a heat treatment a mixture containing a tetraalkoxysilane (a) and an alkyltrialkoxysilane andlor trialkoxysilane (b) at a molar ratio (a:b) of 0:1 to 1:0; and by releasing from 100 to 400 moles of alcohols out of 100 moles of(a+b), the total of the tetraalkoxysilane (a) and the alkyltrialkoxysilane and/or trialkoxysilane (b). 5. A composition according to claim 1, wherein the carbon concentration in said siloxane resin is in the range of from 1 to 80 atom % based on the total atoms of the siloxane resin. 6. A composition according to claim 1, wherein the concentration of hydrogen atoms directly bonded to silicon in said siloxane resin is in the range of from 1 to 25 atom % based on the total atoms of the siloxane resin. 7. A composition according to claim 1, wherein from 0.1 to 200 parts by weight of said silicon resin is used based on 100 parts by weight of said siloxane resin.