IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0320402
(2005-12-28)
|
등록번호 |
US-7362174
(2008-04-22)
|
발명자
/ 주소 |
|
출원인 / 주소 |
|
대리인 / 주소 |
Garlick Harrison & Markison
|
인용정보 |
피인용 횟수 :
5 인용 특허 :
181 |
초록
▼
Current-controlled CMOS (C3MOS) wideband input data amplifier for reduced differential and common-mode reflection. Impedance matching and bandwidth extension provides desired gain at higher frequencies and may be achieved at the interface between silicon and package and/or circuit board within vario
Current-controlled CMOS (C3MOS) wideband input data amplifier for reduced differential and common-mode reflection. Impedance matching and bandwidth extension provides desired gain at higher frequencies and may be achieved at the interface between silicon and package and/or circuit board within various integrated circuits that may be employed within communication devices. In some instances, a differential transistor pair is employed that also includes Miller capacitors coupled between the gate of one transistor of the differential transistor pair to the drain of the other transistor of the differential transistor pair. This can also include series load connected resistors and inductors coupled between the respective drains of the transistors of the differential transistor pair to a power supply voltage. Also, series connected input inductors may also couple to the gates of the transistors of the differential transistor pair.
대표청구항
▼
What is claimed is: 1. A current-controlled CMOS (C3MOS) wideband data amplifier circuit, the circuit comprising: a first differential transistor comprising a source, gate, and drain; a second differential transistor comprising a source, gate, and drain; a current source that is coupled to both the
What is claimed is: 1. A current-controlled CMOS (C3MOS) wideband data amplifier circuit, the circuit comprising: a first differential transistor comprising a source, gate, and drain; a second differential transistor comprising a source, gate, and drain; a current source that is coupled to both the source of the first differential transistor and the source of the second differential transistor; a first output impedance, comprising a first output resistor and a first shunt peaking inductor connected in series, that is coupled between the drain of the first differential transistor and a supply voltage; a second output impedance, comprising a second output resistor and a second shunt peaking inductor connected in series, that is coupled between the drain of the second differential transistor and the supply voltage; a differential termination impedance that is coupled between the gate of the first differential transistor and the gate of the second differential transistor; a first input impedance that is coupled between a first differential input of the C3MOS wideband data amplifier circuit and the gate of the first differential transistor; and a second input impedance that is coupled between a second differential input of the C3MOS wideband data amplifier circuit and the gate of the second differential transistor. 2. The circuit of claim 1, wherein: the differential termination impedance comprises a first resistor and a second resistor connected in series. 3. The circuit of claim 1, wherein: the first input impedance comprises a first series inductor; and the second input impedance comprises a second series inductor. 4. The circuit of claim 1, wherein: the first input impedance comprises a first plurality of inductors connected in series; and the second input impedance comprises a second plurality of inductors connected in series. 5. The circuit of claim 1, wherein: the first input impedance comprises a first series inductor and a first shunt capacitor; and the second input impedance comprises a second series inductor and a second shunt capacitor. 6. The circuit of claim 1, wherein: the first input impedance comprises a first plurality of inductors connected in series thereby generating a first plurality of nodes and a first plurality of shunt capacitors connected between selected nodes of the first plurality of nodes and a ground voltage; and the second input impedance comprises a second plurality of inductors connected in series thereby generating a second plurality of nodes and a second plurality of shunt capacitors connected between selected nodes of the first plurality of nodes and a ground voltage. 7. The circuit of claim 1, wherein: the first output resistor of the first output impedance is coupled between the drain of the first differential transistor and the first shunt peaking inductor of the first output impedance; and the first shunt peaking inductor of the first output impedance is coupled between the first output resistor of the first output impedance and the supply voltage. 8. The circuit of claim 1, wherein: the current source is a current source transistor; and the first differential transistor, the second differential transistor, and the current source transistor comprise NMOS (Negative-Channel Metal-Oxide Semiconductor) transistors; or the first differential transistor, the second differential transistor, and the current source transistor comprise PMOS (Positive-Channel Metal-Oxide Semiconductor) transistors. 9. The circuit of claim 1, further comprising: a first capacitor that is coupled between the drain of the first differential transistor and the gate of the second differential transistor; and a second capacitor that is coupled between the drain of the second differential transistor and the gate of the first differential transistor. 10. The circuit of claim 1, wherein: the C3MOS wideband data amplifier circuit is an input amplifier stage of an integrated circuit. 11. The circuit of claim 10, wherein: the integrated circuit is implemented within a receiver functional block of a communication transceiver. 12. A current-controlled CMOS (C3MOS) wideband data amplifier circuit, the circuit comprising: a first differential input; a second differential input; a wideband differential transistor pair comprising a third differential input and a fourth differential input; an input impedance matching network coupled to the first differential input of the C3MOS wideband data amplifier circuit, the second differential input of the C3MOS wideband data amplifier circuit, the third differential input of the wideband differential transistor pair, and the fourth differential input of the wideband differential transistor pair, wherein input impedance matching network comprises: a differential termination impedance that is coupled between the third differential input of the wideband differential transistor pair and the fourth differential input of the wideband differential transistor pair; a first input impedance that is coupled between the first differential input of the C3MOS wideband data amplifier circuit and the third differential input of the wideband differential transistor pair; and a second input impedance that is coupled between the second differential input of the C3MOS wideband data amplifier circuit and the fourth differential input of the wideband differential transistor pair. 13. The circuit of claim 12, wherein the wideband differential transistor pair comprises: a first differential transistor comprising a source, gate, and drain; a second differential transistor comprising a source, gate, and drain; a current source that is coupled to both the source of the first differential transistor and the source of the second differential transistor; a first output impedance, comprising a first output resistor and a first shunt peaking inductor connected in series, that is coupled between the drain of the first differential transistor and a supply voltage; a second output impedance, comprising a second output resistor and a second shunt peaking inductor connected in series, that is coupled between the drain of the second differential transistor and the supply voltage; a first capacitor that is coupled between the drain of the first differential transistor and the gate of the second differential transistor; and a second capacitor that is coupled between the drain of the second differential transistor and the gate of the first differential transistor; and wherein: the third differential input of the wideband differential transistor pair comprises the gate of the first differential transistor; and the fourth differential input of the wideband differential transistor pair comprises the gate of the second differential transistor. 14. The circuit of claim 12, wherein: the differential termination impedance comprises a first resistor and a second resistor connected in series; the first input impedance comprises a first series inductor; and the second input impedance comprises a second series inductor. 15. The circuit of claim 12, wherein: the first input impedance comprises a first plurality of inductors connected in series; and the second input impedance comprises a second plurality of inductors connected in series. 16. The circuit of claim 12, wherein: the first input impedance comprises a first series inductor and a first shunt capacitor; and the second input impedance comprises a second series inductor and a second shunt capacitor. 17. The circuit of claim 12, wherein: the C3MOS wideband data amplifier circuit is an input amplifier stage of an integrated circuit; and the integrated circuit is implemented within a receiver functional block of a communication transceiver. 18. A current-controlled CMOS (C3MOS) wideband data amplifier circuit, the circuit comprising: a first differential transistor comprising a source, gate, and drain; a second differential transistor comprising a source, gate, and drain; a current source that is coupled to both the source of the first differential transistor and the source of the second differential transistor; a first output impedance, comprising a first output resistor and a first shunt peaking inductor connected in series, such that the first output resistor is coupled between the drain of the first differential transistor and the first shunt peaking inductor, and the first shunt peaking inductor is coupled between the first output resistor and a supply voltage; a second output impedance, comprising a second output resistor and a second shunt peaking inductor connected in series, such that the second output resistor is coupled between the drain of the second differential transistor and the second shunt peaking inductor, and the second shunt peaking inductor is coupled between the second output resistor and the supply voltage; a first capacitor that is coupled between the drain of the first differential transistor and the gate of the second differential transistor; a second capacitor that is coupled between the drain of the second differential transistor and the gate of the first differential transistor; at least one resistor connected in series between the gate of the first differential transistor and the gate of the second differential transistor; a first series inductor that is coupled between a first differential input of the C3MOS wideband data amplifier circuit and the gate of the first differential transistor; and a second series inductor that is coupled between a second differential input of the C3MOS wideband data amplifier circuit and the gate of the second differential transistor. 19. The circuit of claim 18, wherein: the current source is a current source transistor; and the first differential transistor, the second differential transistor, and the current source transistor comprise NMOS (Negative-Channel Metal-Oxide Semiconductor) transistors; or the first differential transistor, the second differential transistor, and the current source transistor comprise PMOS (Positive-Channel Metal-Oxide Semiconductor) transistors. 20. The circuit of claim 18, wherein: the C3MOS wideband data amplifier circuit is an input amplifier stage of an integrated circuit; and the integrated circuit is implemented within a receiver functional block of a communication transceiver.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.