초록 ▼

A semiconductor device having improved reliability is provided. The semiconductor device has a pixel portion. The pixel portion has a TFT and a storage capacitor. The TFT and the storage capacitor has a semiconductor layer which includes first and second regions formed continuously. The TFT has the

A semiconductor device having improved reliability is provided. The semiconductor device has a pixel portion. The pixel portion has a TFT and a storage capacitor. The TFT and the storage capacitor has a semiconductor layer which includes first and second regions formed continuously. The TFT has the first region of the semiconductor layer including a channel forming region, a source region and a drain region located outside the channel forming region, a gate insulating film adjacent to the first region of the semiconductor layer, and a gate electrode formed on the gate insulating film. The storage capacitor has the second region of the semiconductor layer, an insulating film formed adjacent to the second region of the semiconductor layer, and a capacitor wiring formed on the insulating film. The second region of the semiconductor layer contains an impurity element for imparting n-type or p-type conductivity. The thickness of the insulating film adjacent to the second region of the semiconductor layer is thinner than that of the film on the region in which the TFT is formed.

대표청구항 ▼

What is claimed is: 1. A semiconductor device comprising: a pixel portion formed over a substrate; a pixel thin film transistor in the pixel portion; a storage capacitor in the pixel portion; a leveling film in the pixel portion, formed over the pixel thin film transistor and the storage capacitor;

What is claimed is: 1. A semiconductor device comprising: a pixel portion formed over a substrate; a pixel thin film transistor in the pixel portion; a storage capacitor in the pixel portion; a leveling film in the pixel portion, formed over the pixel thin film transistor and the storage capacitor; a pixel electrode in the pixel portion, formed on the leveling film; and a column-shape spacer in the pixel portion formed over the leveling film, wherein the pixel thin film transistor includes: a first region of a semiconductor film having a channel forming region, a source region and a drain region; a gate insulating film being in contact with the first region; and a gate electrode being formed on the gate insulating film, wherein the storage capacitor includes: a second region of the semiconductor film; an insulating film being in contact with the second region; and a storage wiring being formed on the insulating film, wherein the insulating film in contact with the second region has a thinner thickness than the gate insulating film in contact with the first region, wherein the column-shape spacer has a top surface and a bottom surface, and wherein an area of the bottom surface is larger than an area of the top surface. 2. The semiconductor device according to claim 1, wherein one layer in the gate electrode and the storage wiring comprises same material. 3. The semiconductor device according to claim 1, wherein the storage wiring comprises at least one of aluminum (Al) and copper (Cu). 4. The semiconductor device according to claim 1, wherein the pixel thin film transistor is an n-channel thin film transistor. 5. The semiconductor device according to claim 1, wherein the semiconductor device is one selected from the group consisting of a personal computer, a video camera, a portable information terminal, a digital camera, a digital video disk player, and a projector. 6. A semiconductor device comprising: a pixel portion and a driver circuit portion formed over a substrate; a pixel thin film transistor in the pixel portion; a storage capacitor in the pixel portion; a leveling film in the pixel portion, formed over the pixel thin film transistor and the storage capacitor; a pixel electrode in the pixel portion, formed on the leveling film; and a column-shape spacer in the pixel portion, formed over the leveling film, wherein pixel thin film transistor includes: a first region of a semiconductor film having a channel forming region, a source region and a drain region; a gate insulating film being in contact with the first region; and a gate electrode being formed on the gate insulating film, wherein the storage capacitor includes: a second region of the semiconductor film; an insulating film being in contact with the second region; and a storage wiring being formed on the insulating film, wherein the insulating film in contact with the second region has a thinner thickness than the gate insulating film in contact with the first region, wherein the column-shape spacer has a top surface and a bottom surface, and wherein an area of the bottom surface is larger than an area of the top surface. 7. The semiconductor device according to claim 6, wherein one layer in the gate electrode and the storage wiring comprises same material. 8. The semiconductor device according to claim 6, wherein the storage wiring comprises at least one of aluminum (Al) and copper (Cu). 9. The semiconductor device according to claim 6, wherein the pixel thin film transistor is an n-channel thin film transistor. 10. The semiconductor device according to claim 6, wherein the semiconductor device is one selected from the group consisting of a personal computer, a video camera, a portable information terminal, a digital camera, a digital video disk player and a projector. 11. A semiconductor device comprising: a pixel portion formed over a substrate; a pixel thin film transistor in the pixel portion; a storage capacitor in the pixel portion; an n-channel thin film transistor and a p-channel thin film transistor in a driver circuit; and a leveling film in the pixel portion; a pixel electrode in the pixel portion, formed on the leveling film; and a column-shape spacer in the pixel portion, formed over the leveling film, wherein the pixel thin film transistor includes: a first region of a first semiconductor film having a first channel forming region, a first source region and a first drain region; a first gate insulating film being in contact with the first region; and a first gate electrode being formed on the first gate insulating film, wherein the storage capacitor includes: a second region of the first semiconductor film; an insulating film being in contact with the second region; and a storage wiring being formed on the insulating film, wherein the insulating film in contact with the second region has a thinner thickness thah the first gate insulating film in contact with the first region, wherein the n-channel thin film transistor has a second semiconductor film, a second gate insulating film on the second semiconductor film, and a second gate electrode on the second gate insulating film, wherein the second semiconductor film includes a second channel forming region, a second source region, and a second drain region, wherein the second gate electrode includes a first conductive layer and a second conductive layer on the first conductive layer, wherein the column-shape spacer has a top surface and a bottom surface, and wherein an area of the bottom surface is larger than an area of the top surface. 12. The semiconductor device according to claim 11, wherein the second conductive layer comprises at least one of aluminum (Al) and copper (Cu). 13. The semiconductor device according to claim 11, wherein the semiconductor device is one selected from the group consisting of a personal computer, a video camera, a portable information terminal, a digital camera, a digital video disk player and a projector. 14. A semiconductor device comprising: a pixel thin film transistor in a pixel portion; and a storage capacitor in the pixel portion, wherein the pixel thin film transistor includes: a first region of a semiconductor film having a channel forming region, an LDD region, a source region and a drain region; a gate insulating film being in contact with the first region; and a gate electrode being formed on the gate insulating film, wherein the storage capacitor includes: a second region of the semiconductor film; an insulating film being in contact with the second region; and a storage wiring being formed on the insulating film, wherein the insulating film in contact with the second region has a thinner thickness than the gate insulating film in contact with the first region, and wherein the LDD region comprises a first portion and a second portion, wherein a concentration of an element decreases from the first portion to the second portion, and wherein the second portion is closer to the channel forming region than the first portion. 15. The semiconductor device according to claim 14, wherein one layer in the gate electrode and the storage wiring comprises same material. 16. The semiconductor device according to claim 14 wherein the storage wiring comprises at least one of aluminum (Al) and copper (Cu). 17. The semiconductor device according to claim 14, wherein the pixel thin film transistor is an n-channel thin film transistor. 18. The semiconductor device according to claim 14, wherein the semiconductor device is one selected from the group consisting of a personal computer, a video camera, a portable information terminal, a digital camera, a digital video disk player and a projector. 19. A semiconductor device comprising: a pixel portion and a driver circuit portion formed over a substrate; a pixel thin film transistor in the pixel portion; and a storage capacitor in the pixel portion, wherein the pixel thin film transistor includes: a first region of a semiconductor film having a channel forming region, an LDD region, a source region and a drain region; a gate insulating film being in contact with the first region; and a gate electrode being formed on the gate insulating film, wherein the storage capacitor includes: a second region of the semiconductor film; an insulating film being in contact with the second region; and a storage wiring being formed on the insulating film, wherein the insulating film in contact with the second region has a thinner thickness than the gate insulating film in contact with the first region, and wherein the LDD region comprises a first portion and a second portion, wherein a concentration of an element decreases from the first portion to the second portion, and wherein the second portion is closer to the channel forming region than the first portion. 20. The semiconductor device according to claim 19, wherein one layer in the gate electrode and the storage wiring comprises same material. 21. The semiconductor device according to claim 19, wherein the storage wiring comprises at least one of aluminum (Al) and copper (Cu). 22. The semiconductor device according to claim 19, wherein the pixel thin film transistor is an n-channel thin film transistor. 23. The semiconductor device according to claim 19, wherein the semiconductor device is one selected from the group consisting of a personal computer, a video camera, a portable information terminal, a digital camera, a digital video disk player and a projector. 24. A semiconductor device comprising: a pixel portion formed over a substrate; a pixel thin film transistor in the pixel portion; a storage capacitor in the pixel portion; an n-channel thin film transistor and a p-channel thin film transistor in a driver circuit; a leveling film in the pixel portion; a pixel electrode in the pixel portion, formed on the leveling film; and a column-shape spacer in the pixel portion, formed over the leveling film, wherein the pixel thin film transistor includes: a first region of a first semiconductor film having a first channel forming region, a first source region and a first drain region; a first gate insulating film being in contact with the first region; and a first gate electrode being formed on the first gate insulating film, wherein the storage capacitor includes: a second region of the first semiconductor film; an insulating film being in contact with the second region; and a storage wiring being formed on the insulating film, wherein the insulating film in contact with the second region has a thinner thickness than the first gate insulating film in contact with the first region, wherein the n-channel thin film transistor has a second semiconductor film, a second gate insulating film on the second semiconductor film, and a second gate electrode on the second gate insulating film, wherein the second semiconductor film includes a second channel forming region, an LDD region, a second source region, and a second drain region, wherein the second gate electrode includes a first conductive layer and a second conductive layer, wherein the LDD region comprises a first portion and a second portion, wherein a concentration of an element decreases from the first portion to the second portion, and wherein the second portion is closer to the second channel forming region than the first portion. 25. The semiconductor device according to claim 24, wherein the storage wiring comprises at least one of aluminum (Al) and copper (Cu). 26. The semiconductor device according to claim 24, wherein the semiconductor device is one selected from the group consisting of a personal computer, a video camera, a portable information terminal, a digital camera, a digital video disk player and a projector. 27. The semiconductor device according to claim 1, wherein the top surface is a flat surface. 28. The semiconductor device according to claim 6, wherein the top surface is a flat surface. 29. The semiconductor device according to claim 11, wherein the top surface is a flat surface.