초록 ▼

A semiconductor topography is provided which includes a silicon dioxide layer with a thickness equal to or less than approximately 10 angstroms and a silicon nitride layer arranged upon the silicon dioxide layer. In addition, a method is provided which includes growing an oxide film upon a semicondu

A semiconductor topography is provided which includes a silicon dioxide layer with a thickness equal to or less than approximately 10 angstroms and a silicon nitride layer arranged upon the silicon dioxide layer. In addition, a method is provided which includes growing an oxide film upon a semiconductor topography in the presence of an ozonated substance and depositing a silicon nitride film upon the oxide film. In some embodiments, the method may include growing the oxide film in a first chamber at a first temperature and transferring the semiconductor topography from the first chamber to a second chamber while the semiconductor topography is exposed to a substantially similar temperature as the first temperature. In either embodiment, the method may be used to form a semiconductor device including an oxide-nitride gate dielectric having an electrical equivalent oxide gate dielectric thickness of less than approximately 20 angstroms.

대표청구항 ▼

What is claimed is: 1. A semiconductor device comprising an oxide-nitride gate dielectric having substantially equal gate to substrate capacitance as an oxide gate dielectric comprising a thickness less than approximately 20 angstroms, wherein the oxide-nitride gate dielectric comprises: a silicon

What is claimed is: 1. A semiconductor device comprising an oxide-nitride gate dielectric having substantially equal gate to substrate capacitance as an oxide gate dielectric comprising a thickness less than approximately 20 angstroms, wherein the oxide-nitride gate dielectric comprises: a silicon dioxide layer and a distinct silicon nitride layer; and a thickness that varies by less than approximately 5% across the semiconductor topography. 2. The semiconductor device of claim 1, wherein said oxide-nitride gate dielectric has a substantially equal gate to substrate capacitance as an oxide gate dielectric having a thickness between approximately 10 angstroms and approximately 15 angstroms. 3. The semiconductor device of claim 1, wherein said silicon dioxide layer comprises a thickness between approximately 6 angstroms and approximately 10 angstroms, and wherein said distinct silicon nitride layer comprises a thickness between approximately 15 angstroms and approximately 20 angstroms. 4. A method for forming an oxide-nitride stack upon a semiconductor topography, comprising: growing an oxide film upon the semiconductor topography in a first chamber at a first temperature, wherein said growing comprises rinsing the semiconductor topography with an ozonated substance; transferring the semiconductor topography from said first chamber to a second chamber, wherein said transferring comprises exposing the semiconductor topography to a substantially equal temperature as said first temperature; forming a nitride layer upon the oxide film in said second chamber at a second temperature; and forming a second oxide film upon and in contact with the nitride film at a fourth temperature, wherein said fourth temperature is greater than the first temperature. 5. The method of claim 4, wherein said first temperature is between approximately 10�� C. and approximately 30�� C. 6. The method of claim 4, wherein said second temperature is between approximately 750�� C. and approximately 800�� C. 7. The method of claim 4, further comprising annealing said semiconductor topography at a third temperature subsequent to said forming the nitride layer. 8. The method of claim 7, wherein said third temperature is between approximately 750�� C. and approximately 850�� C.