A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to defin
A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
대표청구항▼
What is claimed is: 1. A method for forming multilayered substrates for flat panel displays, the method comprising: providing a donor substrate comprising an overlying a film of silicon material to be detached, the donor substrate having a cleave region formed within a vicinity of between the film
What is claimed is: 1. A method for forming multilayered substrates for flat panel displays, the method comprising: providing a donor substrate comprising an overlying a film of silicon material to be detached, the donor substrate having a cleave region formed within a vicinity of between the film of silicon material and a lower portion of the donor substrate; coupling a surface region of the film of silicon material from the donor substrate to a dielectric handle substrate; applying a voltage between the donor substrate including the film of silicon material and the dielectric handle substrate to induce bonding between the surface region of the film of silicon material and the dielectric handle substrate; and initiating a cleaving action to remove the film of silicon material using a propagating cleave front to form a multi-layered substrate, wherein the multi-layered substrate comprises the film of silicon material overlying the dielectric handle substrate, and wherein the voltage between the donor substrate and the handle substrate is provided by an electro-static bonding process. 2. The method of claim 1 wherein the voltage raises a temperature of the donor substrate and the dielectric handle substrate. 3. The method of claim 1 wherein the dielectric handle substrate comprises glass. 4. The method of claim 1 wherein the dielectric handle substrate comprises quartz. 5. The method of claim 1 wherein the multilayered substrate is the film of silicon material on the dielectric handle substrate comprising glass. 6. The method of claim 1 further comprising plasma activating the surface region of the film of silicon material before the coupling. 7. The method of claim 6 wherein the plasma activating comprises a plasma cleaning process. 8. The method of claim 7 wherein the plasma cleaning process uses a non-reactive gas. 9. The method of claim 1 wherein the surface region of the film of silicon material is dry before coupling. 10. The method of claim 1 wherein a surface region of the dielectric handle substrate is dry before coupling. 11. The method of claim 1 wherein the donor substrate and the dielectric handle substrate are subjected to a thermal source to elevate a temperature of the dielectric handle substrate and the donor substrate. 12. The method of claim 1 further comprising increasing a global energy of the donor substrate and the dielectric handle substrate using a thermal source. 13. A method for forming multilayered substrates for multi-layered substrates, the method comprising: providing a donor substrate comprising an overlying a film of silicon material to be detached, the donor substrate having a cleave region formed within a vicinity of between the film of silicon material and a lower portion of the donor substrate; coupling a surface region of the film of silicon material from the donor substrate to a dielectric handle substrate; applying a voltage between the donor substrate including the film of silicon material and the dielectric handle substrate to induce bonding between the surface region of the film of silicon material and the dielectric handle substrate; increasing a temperature of the donor substrate and the dielectric handle substrate to increase a global energy of the donor substrate and the dielectric handle substrate; and initiating a cleaving action to remove the film of silicon material using a propagating cleave front to form a multi-layered substrate, wherein the multi-layered substrate comprises the film of silicon material overlying the dielectric handle substrate, and wherein the voltage between the donor substrate and the handle substrate is provided by an electro-static bonding process. 14. The method of claim 13 wherein the voltage causes the temperature of the donor substrate and the dielectric handle substrate to increase. 15. The method of claim 13 wherein the dielectric handle substrate comprises glass. 16. The method of claim 13 wherein the dielectric handle substrate comprises quartz. 17. The method of claim 13 wherein the multilayered substrate is the film of silicon material on the dielectric handle substrate comprising glass. 18. The method of claim 13 further comprising plasma activating the surface region of the film of silicon material before the coupling. 19. The method of claim 18 wherein the plasma activating comprises a plasma cleaning process. 20. The method of claim 19 wherein the plasma cleaning process uses a non-reactive gas. 21. The method of claim 13 wherein the surface region of the film of material is dry before coupling. 22. The method of claim 13 wherein a surface region of the dielectric handle substrate is dry before coupling. 23. The method of claim 13 wherein the increasing of the temperature is provided by a thermal source. 24. The method of claim 23 wherein the thermal source is selected from a photon beam, a fluid jet, a liquid jet, a gas jet, an electro/magnetic field, an electron beam, a thermo electric heating process, or a furnace. 25. The method of claim 23 wherein the thermal source is a time varying process. 26. The method of claim 13 wherein the cleaving action is in a selected portion of the donor substrate. 27. The method of claim 26 wherein the selected portion is an edge region. 28. A method for forming multilayered substrates for multi-layered substrates, the method comprising: providing a donor substrate comprising an overlying a film of silicon material to be detached, the donor substrate having a cleave region formed within a vicinity of between the film of silicon material and a lower portion of the donor substrate; coupling a surface region of the film of silicon material from the donor substrate to a dielectric handle substrate; applying a voltage between the donor substrate including the film of silicon material and the dielectric handle substrate to induce bonding between the surface region of the film of silicon material and the dielectric handle substrate; increasing a temperature of the donor substrate and the dielectric handle substrate to increase a global energy of the donor substrate and the dielectric handle substrate; and initiating a cleaving action to remove the film of silicon material using a propagating cleave front to form a multi-layered substrate, wherein the increasing of the temperature is provided by a thermal source, and wherein the thermal source is a spatially varying process. 29. The method of claim 28 wherein the spatially varying process is provided in a z-direction. 30. The method of claim 28 wherein the spatially varying process is provided along a face of the donor substrate. 31. The method of claim 28 wherein the thermal source is a continuous process. 32. A method for forming solar cells, the method comprising: providing a donor substrate comprising an overlying a film of silicon material to be detached, the donor substrate having a cleave region formed within a vicinity of between the film of silicon material and a lower portion of the donor substrate; coupling a surface region of the film of silicon material from the donor substrate to a dielectric handle substrate; applying a voltage between the donor substrate including the film of silicon material and the dielectric handle substrate to induce bonding between the surface region of the film of silicon material and the dielectric handle substrate; increasing a temperature of the donor substrate and the dielectric handle substrate to increase a global energy of the donor substrate and the dielectric handle substrate; and removing the film of silicon material for a solar cell. 33. A method for forming multilayered substrates for flat panel displays, the method comprising: providing a donor substrate comprising an overlying a film of silicon material to be detached, the donor substrate having a cleave region formed within a vicinity of between the film of silicon material and a lower portion of the donor substrate; coupling a surface region of the film of silicon material from the donor substrate to a dielectric handle substrate; applying a voltage between the donor substrate including the film of silicon material and the dielectric handle substrate to induce bonding between the surface region of the film of silicon material and the dielectric handle substrate; and initiating a cleaving action to remove the film of silicon material using a propagating cleave front to form a multi-layered substrate, the method further comprising, introducing a plurality of particles through a surface of the donor substrate into the donor substrate, wherein the plurality of particles includes hydrogen in combination with helium. 34. The method of claim 33 wherein at least one of the plurality of particles is derived from a source selected from the group consisting of hydrogen gas, helium gas, water vapor, methane, and hydrogen compounds. 35. The method of claim 33 wherein at least one of the plurality of particles is selected from the group consisting of neutral molecules, neutral atoms, charged molecules, charged atoms, and electrons. 36. A method for forming multilayered substrates for flat panel displays, the method comprising: providing a donor substrate comprising an overlying a film of silicon material to be detached, the donor substrate having a cleave region formed within a vicinity of between the film of silicon material and a lower portion of the donor substrate; coupling a surface region of the film of silicon material from the donor substrate to a dielectric handle substrate; applying a voltage between the donor substrate including the film of silicon material and the dielectric handle substrate to induce bonding between the surface region of the film of silicon material and the dielectric handle substrate; and initiating a cleaving action to remove the film of silicon material using a propagating cleave front to form a multi-layered substrate, the method further comprising. introducing a plurality of particles through a surface of the donor substrate into the donor substrate, wherein the plurality of particles includes hydrogen in combination with a rare gas. 37. A method for forming multilayered substrates for flat panel displays, the method comprising: providing a donor substrate comprising an overlying a film of silicon material to be detached, the donor substrate having a cleave region formed within a vicinity of between the film of silicon material and a lower portion of the donor substrate; coupling a surface region of the film of silicon material from the donor substrate to a dielectric handle substrate; applying a voltage between the donor substrate including the film of silicon material and the dielectric handle substrate to induce bonding between the surface region of the film of silicon material and the dielectric handle substrate; and initiating a cleaving action to remove the film of silicon material using a propagating cleave front to form a multi-layered substrate, the method further comprising, introducing a plurality of particles through a surface of the donor substrate into the donor substrate, and implanting a second plurality of particles through the surface into the donor substrate. 38. The method of claim 37 wherein the second plurality of particles includes hydrogen. 39. The method of claim 37 wherein one of the plurality of particles and the second plurality of particles includes hydrogen, and the other of the plurality of particles and the second plurality of particles includes helium. 40. The method of claim 37 wherein one of the plurality of particles and the second plurality of particles includes hydrogen, and the other of the plurality of particles and the second plurality of particles includes a rare gas. 41. The method of claim 37 wherein at least one of the plurality of particles is provided in the cleave region. 42. A method for forming multilayered substrates for flat panel displays, the method comprising: providing a donor substrate comprising an overlying a film of silicon material to be detached, the donor substrate having a cleave region formed within a vicinity of between the film of silicon material and a lower portion of the donor substrate; coupling a surface region of the film of silicon material from the donor substrate to a dielectric handle substrate; applying a voltage between the donor substrate including the film of silicon material and the dielectric handle substrate to induce bonding between the surface region of the film of silicon material and the dielectric handle substrate; and initiating a cleaving action to remove the film of silicon material using a propagating cleave front to form a multi-layered substrate, the method further comprising, introducing a plurality of first particles through a surface of the donor substrate into the donor substrate, and implanting a plurality of second particles through the surface into the donor substrate, wherein a first particle of the plurality of first particles or a second particle of the plurality of second particles is derived from a source selected from the group consisting of hydrogen gas, helium gas, water vapor, methane, and hydrogen compounds. 43. A method for forming multilayered substrates for flat panel displays, the method comprising: providing a donor substrate comprising an overlying a film of silicon material to be detached, the donor substrate having a cleave region formed within a vicinity of between the film of silicon material and a lower portion of the donor substrate; coupling a surface region of the film of silicon material from the donor substrate to a dielectric handle substrate; applying a voltage between the donor substrate including the film of silicon material and the dielectric handle substrate to induce bonding between the surface region of the film of silicon material and the dielectric handle substrate; and initiating a cleaving action to remove the film of silicon material using a propagating cleave front to form a multi-layered substrate, the method further comprising, introducing a plurality of first particles through a surface of the donor substrate into the donor substrate, and implanting a plurality of second particles through the surface into the donor substrate, wherein a first particle of the plurality of first particles or a second particle of the plurality of second particles is derived from a source selected from the group consisting of neutral molecules, neutral atoms, charged molecules, charged atoms, and electrons. 44. A method for forming multilayered substrates for flat panel displays, the method comprising: providing a donor substrate comprising an overlying a film of silicon material to be detached, the donor substrate having a cleave region formed within a vicinity of between the film of silicon material and a lower portion of the donor substrate; coupling a surface region of the film of silicon material from the donor substrate to a dielectric handle substrate; applying a voltage between the donor substrate including the film of silicon material and the dielectric handle substrate to induce bonding between the surface region of the film of silicon material and the dielectric handle substrate; and initiating a cleaving action to remove the film of silicon material using a propagating cleave front to form a multi-layered substrate, the method further comprising. introducing a plurality of particles through a surface of the donor substrate into the donor substrate, wherein at least one of the plurality of particles remains in the film of silicon material after initiating the cleaving action. 45. A method for forming multilayered substrates for multi-layered substrates, the method comprising: providing a donor substrate comprising an overlying a film of silicon material to be detached, the donor substrate having a cleave region formed within a vicinity of between the film of silicon material and a lower portion of the donor substrate; coupling a surface region of the film of silicon material from the donor substrate to a dielectric handle substrate; applying a voltage between the donor substrate including the film of silicon material and the dielectric handle substrate to induce bonding between the surface region of the film of silicon material and the dielectric handle substrate; increasing a temperature of the donor substrate and the dielectric handle substrate to increase a global energy of the donor substrate and the dielectric handle substrate; and initiating a cleaving action to remove the film of silicon material using a propagating cleave front to form a multi-layered substrate, the method further comprising introducing a plurality of particles through a surface of the donor substrate into the donor substrate, wherein the plurality of particles includes hydrogen in combination with helium. 46. The method of claim 45 wherein at least one of the plurality of particles is derived from a source selected from the group consisting of hydrogen gas, helium gas, water vapor, methane, and hydrogen compounds. 47. The method of claim 45 wherein at least one of the plurality of particles is selected from the group consisting of neutral molecules, neutral atoms, charged molecules, charged atoms, and electrons. 48. The method of claim 45 wherein at least one of the plurality of particles is provided in the cleave region. 49. A method for forming multilayered substrates for multi-layered substrates, the method comprising: providing a donor substrate comprising an overlying a film of silicon material to be detached, the donor substrate having a cleave region formed within a vicinity of between the film of silicon material and a lower portion of the donor substrate; coupling a surface region of the film of silicon material from the donor substrate to a dielectric handle substrate; applying a voltage between the donor substrate including the film of silicon material and the dielectric handle substrate to induce bonding between the surface region of the film of silicon material and the dielectric handle substrate; increasing a temperature of the donor substrate and the dielectric handle substrate to increase a global energy of the donor substrate and the dielectric handle substrate; and initiating a cleaving action to remove the film of silicon material using a propagating cleave front to form a multi-layered substrate, the method further comprising introducing a plurality of particles through a surface of the donor substrate into the donor substrate, wherein the plurality of particles includes hydrogen in combination with a rare gas. 50. A method for forming multilayered substrates for multi-layered substrates, the method comprising: providing a donor substrate comprising an overlying a film of silicon material to be detached, the donor substrate having a cleave region formed within a vicinity of between the film of silicon material and a lower portion of the donor substrate; coupling a surface region of the film of silicon material from the donor substrate to a dielectric handle substrate; applying a voltage between the donor substrate including the film of silicon material and the dielectric handle substrate to induce bonding between the surface region of the film of silicon material and the dielectric handle substrate; increasing a temperature of the donor substrate and the dielectric handle substrate to increase a global energy of the donor substrate and the dielectric handle substrate; and initiating a cleaving action to remove the film of silicon material using a propagating cleave front to form a multi-layered substrate, the method further comprising introducing a first plurality of particles through a surface of the donor substrate into the donor substrate, wherein the first plurality of particles includes hydrogen in combination with helium, and implanting a second plurality of particles through the surface of the donor substrate into the donor substrate. 51. The method of claim 50 wherein the second plurality of particles includes hydrogen. 52. The method of claim 50 wherein one of the first plurality of particles and the second plurality of particles includes hydrogen, and the other of the first plurality of particles and the second plurality of particles includes helium. 53. The method of claim 50 wherein one of the first plurality of particles and the second plurality of particles includes hydrogen, and the other of the first plurality of particles and the second plurality of particles includes a rare gas. 54. The method of claim 50 wherein a first particle of the first plurality of particles or a second particle of the second plurality of particles is derived from a source selected from the group consisting of hydrogen gas, helium gas, water vapor, methane, and hydrogen compounds. 55. The method of claim 50 wherein a first particle of the first plurality of particles or a second particle of the second plurality of particles is derived from a source selected from the group consisting of neutral molecules, neutral atoms, charged molecules, charged atoms, and electrons. 56. A method for forming multilayered substrates for multi-layered substrates, the method comprising: providing a donor substrate comprising an overlying a film of silicon material to be detached, the donor substrate having a cleave region formed within a vicinity of between the film of silicon material and a lower portion of the donor substrate; coupling a surface region of the film of silicon material from the donor substrate to a dielectric handle substrate; applying a voltage between the donor substrate including the film of silicon material and the dielectric handle substrate to induce bonding between the surface region of the film of silicon material and the dielectric handle substrate; increasing a temperature of the donor substrate and the dielectric handle substrate to increase a global energy of the donor substrate and the dielectric handle substrate; and initiating a cleaving action to remove the film of silicon material using a propagating cleave front to form a multi-layered substrate, the method further comprising, introducing a plurality of particles through a surface of the donor substrate into the donor substrate, wherein at least one of the plurality of particles remains in the film of silicon material after initiating the cleaving action.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (170)
Matsushita Takeshi,JPX ; Morita Etsuo,JPX ; Nakajima Tsuneo,JPX ; Hasegawa Hiroyuki,JPX ; Shingyouji Takayuki,JPX, A SOI substrate fabricating method.
Frank Walter (Burgkirchen DEX) Pemwieser Albert (Ach ATX) Spatzier Gerhard (Eggelsberg ATX), Apparatus and method of automatically separating stacked wafers.
Ovshinsky Stanford R. (Bloomfield Hills MI) Ovshinsky Herbert (Oak Park MI) Young Rosa (Troy MI), Apparatus for deposition of thin-film, solid state batteries.
Linn Jack H. (Melbourne FL) Lowry Robert K. (Melbourne Beach FL) Rouse George V. (Indiatlantic FL) Buller James F. (Austin TX), Bonded wafer processing with metal silicidation.
Matossian Jesse N. (Woodland Hills CA) Mikkola Paul H. (Saint Charles MI) Bartelt John L. (Camarillo CA), Evaluation of the extent of wear of articles.
Phillips Richard J. (Billerica MA) Glicksman Leon R. (Lynnfield MA) Larson Ralph (Bolton MA), Forced-convection, liquid-cooled, microchannel heat sinks.
Pease Roger F. (Stanford CA) Tuckerman David B. (Stanford CA) Swanson Richard M. (Los Altos CA), Heat sink and method of attaching heat sink to a semiconductor integrated circuit and the like.
Myers ; Jr. Samuel M. ; Bishop Dawn M. ; Follstaedt David M., Impurity gettering in silicon using cavities formed by helium implantation and annealing.
Ellenberger Charles E. (Elko NV) Bower George L. (Elko NV) Snow William R. (Sunnyvale CA), Independently variably controlled pulsed R.F. plasma chemical vapor processing.
Zavracky Paul M. (Norwood MA) Fan John C. C. (Chestnut Hill MA) McClelland Robert (Norwell MA) Jacobsen Jeffrey (Hollister CA) Dingle Brenda (Mansfield MA), Liquid crystal display having essentially single crystal transistors pixels and driving circuits.
Rouse George V. (Indialantic FL) Reinecke Paul S. (Indialantic FL) McLachlan Craig J. (Melbourne Beach FL), Manufacturing ultra-thin wafer using a handle wafer.
Clifton Mark B. (Robbinsville NJ) Flynn Richard M. (Noblesville IN) Verdi Fred W. (Lawrenceville NJ), Method for fabricating thin, strong, and flexible die for smart cards.
Kamijo Hiroyuki (Yokohama JPX) Mikata Yuuichi (Kawasaki JPX), Method for manufacturing a semiconductor device and suppressing the generation of bulk microdefects near the substrate s.
Spitzer Mark B. (Sharon MA) Salerno Jack P. (Waban MA) Jacobsen Jeffrey (Hollister CA) Dingle Brenda (Mansfield MA) Vu Duy-Phach (Taunton MA) Zavracky Paul M. (Norwood MA), Method for manufacturing a semiconductor device using a circuit transfer film.
Vu Duy-Phach (Taunton MA) Dingle Brenda D. (Mansfield MA) Dingle Jason E. (Mansfield MA) Cheong Ngwe (Boston MA), Method for manufacturing a semiconductor device using a circuit transfer film.
Hubler Graham K. (Alexandria VA) Donovan Edward P. (Annandale VA) Van Vechten Deborah (Baltimore MD), Method for producing substoichiometric silicon nitride of preselected proportions.
Woolhouse Geoffrey R. (White Plains NY) Huggins Harold A. (Hartsdale NY) Collins David W. (Watchung NJ), Method of cleaving semiconductor diode laser wafers.
Zavracky Paul M. (Norwood MA) Fan John C. C. (Chestnut Hill MA) McClelland Robert (Norwell MA) Jacobsen Jeffrey (Hollister CA) Dingle Brenda (Norton MA), Method of fabricating single crystal silicon arrayed devices for display panels.
Ohshima Jiro (Kawasaki JPX) Taka Shin-ichi (Kawasaki JPX) Ito Toshiyo (Yokohama JPX) Aoyama Masaharu (Fujisawa JPX), Method of gettering a semiconductor device and forming an isolation region therein.
Brown Dale M. (Schenectady NY) Vosburgh Kirby G. (Schenectady NY), Method of making integrated circuits utilizing ion implantation and selective epitaxial growth.
Beyer Klaus D. (Poughkeepsie NY) Hsu Louis L. (Fishkill NY) Silvestri Victor J. (Hopewell Junction NY) Yapsir Andrie S. (Pleasane Valley NY), Method of producing a thin silicon-on-insulator layer.
Deutscher Siegfried G. (Herzlia ILX) Grunbaum Enrique (Kfar Saba ILX), Method of producing monocrystalline semiconductor films utilizing an intermediate water dissolvable salt layer.
Chen Ching-Hwa (Milpitas CA) Liu David (San Jose CA) Tran Duc (Saratoga CA), Method of treating an article with a plasma apparatus in which a uniform electric field is induced by a dielectric windo.
Rough J. Kirkwood H. (264 S. 14th St. San Jose CA 95112) Rose Peter W. (1000 Almanor Ave. Menlo Park CA 94025), Multiple electrode plasma reactor power distribution system.
Johnson Wayne L. (12019 S. Appaloosa Dr. Phoenix AZ 85044), Plasma generating apparatus employing capacitive shielding and process for using such apparatus.
Dolins Steven B. (Dallas TX) Srivastava Aditya (Richardson TX) Flinchbaugh Bruce E. (Dallas TX) Gunturi Sarma S. (Richardson TX) Lassiter Thomas W. (Garland TX) Love Robert L. (McKinney TX), Process and apparatus for detecting aberrations in production process operations.
Bruel Michel (Veurey FRX) du Port de Poncharra Jean (St. Martin-Le-Vinoux FRX), Process for producing an insulating layer buried in a semiconductor substrate by ion implantation.
Sato Nobuhiko,JPX ; Yonehara Takao,JPX ; Sakaguchi Kiyofumi,JPX, Process for producing semiconductor substrate by heating to flatten an unpolished surface.
Kramler, Josef; Kuhn-Kuhnenfeld, Franz; Gerber, Hans-Adolf, Process for the manufacture of semiconductor wafers with a rear side having a gettering action.
Matsushita Takeshi,JPX ; Kusunoki Misao,JPX ; Tatsumi Takaaki,JPX, Semiconductor substrate and thin film semiconductor device, method of manufacturing the same, and anodizing apparatus.
Zavracky Paul M. (Norwood MA) Fan John C. C. (Chestnut Hill MA) McClelland Robert (Norwell MA) Jacobsen Jeffrey (Hollister CA) Dingle Brenda (Norton MA), Single crystal silicon arrayed devices for display panels.
Zavracky Paul M. (Norwood MA) Fan John C. C. (Chestnut Hill MA) McClelland Robert (Norwell MA) Jacobsen Jeffrey (Hollister CA) Dingle Brenda (Norton MA) Spitzer Mark B. (Sharon MA), Single crystal silicon arrayed devices for display panels.
Zavracky Paul M. (Norwood MA) Fan John C. C. (Chestnut Hill MA) McClelland Robert (Norwell MA) Jacobsen Jeffrey (Hollister CA) Dingle Brenda (Norton MA) Spitzer Mark B. (Sharon MA), Single crystal silicon arrayed devices for display panels.
Spitzer Mark B. (Sharon MA) Salerno Jack P. (Waban MA) Jacobsen Jeffrey (Hollister CA), Single crystal silicon arrayed devices for projection displays.
Vu Duy-Phach (Taunton MA) Dingle Brenda D. (Mansfield MA) Dingle Jason E. (Mansfield MA) Cheong Ngwe (Boston MA), Single crystal silicon tiles for liquid crystal display panels including light shielding layers.
Zavracky Paul M. (Norwood MA) Fan John C. C. (Chestnut Hill MA) McClelland Robert (Norwell MA) Jacobsen Jeffrey (Hollister CA) Dingle Brenda (Norton MA), Single crystal silicon transistors for display panels.
Komvopoulos Kyriakos (Orinda CA) Brown Ian G. (Berkeley CA) Wei Bo (Albany CA) Anders Simone (Albany CA) Anders Andre (Albany CA) Bhatia Singh C. (Morgan Hill CA), Surface treatment of magnetic recording heads.
Salerno Jack P. (Waban MA) Zavracky Paul M. (Norwood MA) Spitzer Mark B. (Sharon MA) Dingle Brenda (Mansfield MA), Transferred single crystal arrayed devices including a light shield for projection displays.
Ecer Gunes M. (Irvine CA) Wood Susan (Pittsburgh PA) Schreurs Jan J. (Plum Boro PA), Wear resistant steel articles with carbon, oxygen and nitrogen implanted in the surface thereof.
Cronquist, Brian; Beinglass, Isreal; de Jong, Jan Lodewijk; Sekar, Deepak C.; Or-Bach, Zvi, Method for fabrication of a semiconductor device and structure.
Or-Bach, Zvi; Cronquist, Brian; Beinglass, Isreal; de Jong, Jan Lodewijk; Sekar, Deepak C., Method for fabrication of a semiconductor device and structure.
Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian; Beinglass, Israel; de Jong, Jan Lodewijk, Method for fabrication of a semiconductor device and structure.
Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian; Beinglass, Israel; de Jong, Jan Lodewijk, Method for fabrication of a semiconductor device and structure.
Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian; Beinglass, Israel; de Jong, Jan Lodewijk, Method for fabrication of a semiconductor device and structure.
Or-Bach, Zvi; Cronquist, Brian; Beinglass, Isreal; de Jong, Jan Lodewijk; Sekar, Deepak C., Method of fabricating a semiconductor device and structure.
Or-Bach, Zvi; Sekar, Deepak; Cronquist, Brian; Wurman, Ze'ev, Method of forming three dimensional integrated circuit devices using layer transfer technique.
Or-Bach, Zvi; Cronquist, Brian; Beinglass, Israel; de Jong, J. L.; Sekar, Deepak C.; Lim, Paul, Method of manufacturing a three dimensional integrated circuit by transfer of a mono-crystalline layer.
Takayama, Toru; Maruyama, Junya; Yamazaki, Shunpei, Method of peeling thin film device and method of manufacturing semiconductor device using peeled thin film device.
Takayama, Toru; Maruyama, Junya; Yamazaki, Shunpei, Method of peeling thin film device and method of manufacturing semiconductor device using peeled thin film device.
Or-Bach, Zvi; Cronquist, Brian; Beinglass, Israel; de Jong, Jan Lodewijk; Sekar, Deepak C.; Wurman, Zeev, System comprising a semiconductor device and structure.
Or-Bach, Zvi; Cronquist, Brian; Beinglass, Israel; de Jong, Jan Lodewijk; Sekar, Deepak C.; Wurman, Zeev, System comprising a semiconductor device and structure.
Or-Bach, Zvi; Cronquist, Brian; Beinglass, Israel; de Jong, Jan Lodewijk; Sekar, Deepak C.; Wurman, Zeev, System comprising a semiconductor device and structure.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.