초록 ▼

A cap nitride stack which prevents etch penetration to the HDP nitride while maintaining the electromigration benefits of HDP nitride atop Cu. In one embodiment, the stack comprises a first layer of HDP nitride and a second layer of a Si--C--H compound disposed over the first layer. The Si--C--H com

A cap nitride stack which prevents etch penetration to the HDP nitride while maintaining the electromigration benefits of HDP nitride atop Cu. In one embodiment, the stack comprises a first layer of HDP nitride and a second layer of a Si--C--H compound disposed over the first layer. The Si--C--H compound is for example BLoK, or N-BLoK (Si--C--H--N), and is selected from a group of materials that has high selectivity during via RIE such that RIE chemistry from the next wiring level does not punch through. Carbon and nitrogen are the key elements. In another embodiment, the stack comprises a first layer of HDP nitride, followed by a second layer of UVN (a plasma nitride), and a third layer comprising HDP nitride disposed over the second layer.

대표청구항 ▼

What is claimed is: 1. Capping layer for an interconnect structure comprising an interlevel dielectric (ILO) material and a copper conductor embedded in a surface of the ILD, the capping layer comprising: a first layer comprising a material selected from the group consisting of HDP nitride, silicon

What is claimed is: 1. Capping layer for an interconnect structure comprising an interlevel dielectric (ILO) material and a copper conductor embedded in a surface of the ILD, the capping layer comprising: a first layer comprising a material selected from the group consisting of HDP nitride, silicon carbide, silicon carbonitride, silicon boronitride and HDP boron nitride disposed over a surface of the ILD and the copper conductor; and a second layer, disposed over the first layer, comprising a material that has high selectivity during via RIE such that RIE chemistry does not punch through the second layer, and that is also able to be opened during via open of a subsequent trench RIE step; wherein the second layer comprises a material selected from the group consisting of Si--O--C--H, Si--C--H and Si--C--H--N. 2. The capping layer of claim 1, wherein: the first layer comprises HDP CVD silicon nitride having a composition of about 30-50 atomic percent silicon, about 40-65 atomic percent nitrogen and about 5-13 atomic percent hydrogen. 3. The capping layer of claim 2, wherein: the first layer further comprises HDP CVD silicon nitride having a composition of about 40 atomic percent silicon, about 52 atomic percent nitrogen, and about 8 atomic percent hydrogen. 4. The capping layer of claim 1, wherein: the first layer has a thickness of approximately 5-70 nm. 5. The capping layer of claim 1, wherein; the first layer has a thickness of approximately 10-20 nm. 6. The capping layer of claim 1, wherein: the second layer has a thickness of approximately 10-50 nm. 7. The capping layer of claim 1, wherein: the second layer has a thickness of approximately 30-40 nm. 8. The capping layer of claim 1, wherein: the ILD material comprises silicon dioxide. 9. The capping layer of claim 1, wherein: the ILD material comprises a low-k dielectric material. 10. Capping layer for an interconnect structure comprising an interlevel dielectric (ILD) material and a copper conductor embedded in a surface of the ILD, the capping layer comprising: a first layer comprising HDP CVD silicon nitride having a composition of about 30-50 atomic percent silicon, about 40-65 atomic percent nitrogen and about 5-13 atomic percent hydrogen disposed over a surface of the ILD and the copper conductor; a second layer comprising a FE nitride disposed over the first layer; and a third layer comprising a material selected from the group consisting of HDP nitride, silicon carbide, silicon carbonitride, silicon boronitride and HDP boron nitride disposed over the second layer. 11. The capping layer of claim 10, wherein: the first layer comprises HDP CVD silicon nitride having a composition of about 40 atomic percent silicon, about 52 atomic percent nitrogen, and about 8 atomic percent hydrogen. 12. The capping layer of claim 10, wherein: the first layer is thick enough to provide for electromigration protection; the second layer is thick enough to cover seams in the first layer; and the third layer is thick enough to provide etch stop protection. 13. The capping layer of claim 10, wherein: the second layer comprises UV nitride. 14. Capping layer for an interconnect structure comprising: a tri-layer stack of HDP nitride over UVN over HDP nitride. 15. Capping layer for an interconnect structure comprising an interlevel dielectric (ILD) material and a copper conductor embedded in a surface of the ILD, the capping layer comprising: a first layer comprising a material selected from the group consisting of HDP nitride, silicon carbide, silicon carbonitride, silicon boronitride and HDP boron nitride disposed over a surface of the ILD and the copper conductor; a second layer, disposed over the first layer, comprising N-BLoK; and a third layer, disposed over the second layer, comprising a material selected from the group consisting of HDP nitride, silicon carbide, silicon carbonitride, silicon boronitnide and HDP boron nitride.