초록 ▼

The present invention provides an interconnects-forming method and an interconnects-forming apparatus which can minimize the lowering of processing accuracy in etching, minimize light exposure processing for the formation of interconnect recesses in the production of multi-level interconnects, impro

The present invention provides an interconnects-forming method and an interconnects-forming apparatus which can minimize the lowering of processing accuracy in etching, minimize light exposure processing for the formation of interconnect recesses in the production of multi-level interconnects, improve the electromigration resistance of interconnects without impairing the electrical properties of the interconnects, and enhance the reliability of the device. The interconnects-forming method, includes providing interconnect recesses in an insulating film formed in a surface of a substrate; embedding an interconnect material in the interconnect recesses while forming a metal film of the interconnect material on a surface of the insulating film; removing an extra metal material other than the metal material in the interconnect recesses and flattening the substrate surface, thereby forming interconnects; forming a first protective film of a conductive material selectively on exposed surfaces of the interconnects; forming a second protective film on the surface of the substrate having the thus-formed first protective film; forming an interlevel insulating film on the surface of the substrate having the thus-formed second protective film; and flattening a surface of the interlevel insulating film.

대표청구항 ▼

What is claimed is: 1. An interconnects-forming apparatus, comprising: an interconnects-forming unit for embedding an interconnect material in interconnect recesses provided in an insulating film formed in a surface of a substrate while forming a metal film of the interconnect material on a surface

What is claimed is: 1. An interconnects-forming apparatus, comprising: an interconnects-forming unit for embedding an interconnect material in interconnect recesses provided in an insulating film formed in a surface of a substrate while forming a metal film of the interconnect material on a surface of the insulating film; a first flattening unit for removing an extra metal material other than the metal material in the interconnect recesses and flattening the substrate surface, thereby forming interconnects; a first protective film-forming unit for forming a first protective film of a conductive material selectively on exposed surfaces of the interconnects; a second protective film-forming unit for forming a second protective film on the surface of the substrate having the thus-formed first protective film; an interlevel insulating film-forming unit for forming an interlevel insulating film on the surface of the substrate having the thus-formed second protective film; and a second flattening unit for flattening a surface of the interlevel insulating film; wherein the first protective film-forming unit is comprised of an electroless plating unit comprising a plating tank, a substrate holding mechanism, an automatic substrate transport mechanism, a plating solution circulation mechanism, a plating solution temperature control mechanism, and a liquid control mechanism having a plating solution analysis/replenishment function. 2. The interconnects-forming apparatus according to claim 1, wherein the electroless plating unit has at least one of a catalyst application treatment function, a pre-and/or post-catalyst application chemical cleaning function, a plating function, a post-plating chemical cleaning function, a post-chemical cleaning rinsing function and a substrate drying function. 3. An interconnects-forming apparatus, comprising: an interconnects-forming unit for embedding an interconnect material in interconnect recesses provided in an insulating film formed in a surface of a substrate while forming a metal film of the interconnect material on a surface of the insulating film; a first flattening unit for removing an extra metal material other than the metal material in the interconnect recesses and flattening the substrate surface, thereby forming interconnects; a first protective film-forming unit for forming a first protective film of a conductive material selectively on exposed surfaces of the interconnects; a second protective film-forming unit for forming a second protective film on the surface of the substrate having the thus-formed first protective film; an interlevel insulating film-forming unit for forming an interlevel insulating film on the surface of the substrate having the thus-formed second protective film; a second flattening unit for flattening a surface of the interlevel insulating film; and a recess processing unit which, after the formation of the interconnects by removing the extra metal material other than the metal material in the interconnect recesses and flattening the substrate surface, forms recesses for protective film at the top portions of the interconnects.