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Method of providing contact via to a surface 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/4763
  • H01L-021/02
출원번호 US-0964317 (2004-10-12)
등록번호 US-7375027 (2008-05-20)
발명자 / 주소
  • Tsai,Kuei Chang
  • Chao,Chunyuan
  • Hsiao,Chia Shun
출원인 / 주소
  • ProMOS Technologies Inc.
대리인 / 주소
    MacPherson Kwok Chen & Heid LLP
인용정보 피인용 횟수 : 0  인용 특허 : 68

초록 ▼

A contact via to a surface of a semiconductor material is provided, the contact via having a sidewall which is produced by anisotropically etching a dielectric layer which is placed on via openings. A protective layer is provided on the surface of the semiconductor material. To protect the substrate

대표청구항 ▼

We claim: 1. A method of providing a contact via to a surface of a substrate, the method comprising: forming a first dielectric layer on the surface; forming a second dielectric layer on the first dielectric layer; providing a first aperture which extends from a surface of the second dielectric lay

이 특허에 인용된 특허 (68)

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