초록 ▼

A method and article to provide a three-dimensional (3-D) IC wafer process flow. In some embodiments, the method and article include bonding a device layer of a multilayer wafer to a device layer of another multilayer wafer to form a bonded pair of device layers, each of the multilayer wafers includ

A method and article to provide a three-dimensional (3-D) IC wafer process flow. In some embodiments, the method and article include bonding a device layer of a multilayer wafer to a device layer of another multilayer wafer to form a bonded pair of device layers, each of the multilayer wafers including a layer of silicon on a layer of porous silicon (SiOPSi) on a silicon substrate where the device layer is formed in the silicon layer, separating the bonded pair of device layers from one of the silicon substrates by splitting one of the porous silicon layers, and separating the bonded pair of device layers from the remaining silicon substrate by splitting the other one of the porous silicon layers to provide a vertically stacked wafer.

대표청구항 ▼

What is claimed is: 1. A method comprising: bonding a multilayer wafer including a device layer to another multilayer wafer including a device layer, face-to-face, to form a bonded pair of device layers, each of the multilayer wafers including a layer of silicon on a layer of porous silicon on a si

What is claimed is: 1. A method comprising: bonding a multilayer wafer including a device layer to another multilayer wafer including a device layer, face-to-face, to form a bonded pair of device layers, each of the multilayer wafers including a layer of silicon on a layer of porous silicon on a silicon substrate wherein the device layer is formed in the silicon layer; separating the bonded pair of device layers from one of the silicon substrates by splitting one of the porous silicon layers; and separating the bonded pair of device layers from the remaining silicon substrate by splitting the other one of the porous silicon layers. 2. The method of claim 1, wherein the multilayer devices further comprise interconnect layers. 3. The method of claim 2, wherein the interconnect layers of the multilayer wafers are bonded together to form a bonded pair of interconnected layers. 4. The method of claim 1, further comprising creating the multilayer wafers. 5. The method of claim 4, wherein the creating comprises forming the layer of porous silicon on the silicon substrate and forming the layer of silicon on the layer of porous silicon. 6. The method of claim 1, further comprising packaging the bonded pair of device layers. 7. The method of claim 1, wherein the porous silicon layer is split by directing a water jet between layers of the porous silicon layer having differing porosity. 8. The method of claim 1, further comprising singulating the bonded pair of device layers. 9. The method of claim 1, wherein the bonded pair of device layers is less than about 20 microns thick. 10. The method of claim 9, wherein the bonded pair of device layers is about 10 angstroms to about 3 microns thick. 11. The method of claim 1, wherein the splitting of the porous silicon layer occurs along a transition of porous silicon layers having differing porosities. 12. The method of claim 1, wherein at least one of the multilayer wafers comprises a silicon layer on an insulator on a porous silicon layer (SiOIOpSi) on a silicon substrate. 13. The method of claim 1, further comprising processing the multilayer wafers to form the device layer in the silicon layer. 14. The method of claim 1, further comprising removing a portion of the split porous silicon layer from the bonded pair. 15. The method of claim 1, further comprising temporarily attaching the bonded pair of device layers to a backing material. 16. An article, comprising: a storage medium having stored thereon instructions that when executed by a machine result in the following: bonding a multilayer wafer including a device layer to another multilayer wafer including a device layer, face-to-face, to form a bonded pair of device layers, each of the multilayer wafers including a layer of silicon on a layer of porous silicon on a silicon substrate wherein the device layer is formed in the silicon layer; separating the bonded pair of device layers from one of the silicon substrates by splitting one of the porous silicon layers; and separating the bonded pair of device layers from the remaining silicon substrate by splitting the other one of the porous silicon layers. 17. The article of claim 16, wherein the multilayer devices further comprise interconnect layers. 18. The article of claim 17, wherein the interconnect layers of the multilayer wafers are bonded together to form a bonded pair of interconnected. 19. The article of claim 16, further comprising creating the multilayer wafers. 20. The article of claim 19, wherein the creating comprises forming the layer of porous silicon on the silicon substrate and forming the layer of silicon on the layer of porous silicon. 21. The article of claim 16, further comprising packaging the bonded pair of device layers. 22. The article of claim 16, wherein the porous silicon layer is split by directing a water jet between layers of the porous silicon having differing porosity. 23. The article of claim 16, further comprising singulating the bonded pair of device layers. 24. The article of claim 16, wherein the bonded pair of device layers is less than about 20 microns thick. 25. The article of claim 24, wherein the bonded pair of device layers is about 10 angstroms to about 3 microns thick. 26. The article of claim 16, wherein the splitting of the porous silicon layer occurs along a transition of porous silicon layers having differing porosities. 27. The article of claim 16, wherein at least one of the multilayer wafer comprises a silicon layer on an insulator on a porous silicon layer (SiOIOpSi) on a silicon substrate. 28. The article of claim 16, further comprising processing the multilayer wafers to form the device layer in the silicon layer. 29. The article of claim 16, further comprising removing a portion of the split porous silicon layer from the bonded pair. 30. The article of claim 16, further comprising temporarily attaching the bonded pair of device layers to a backing material.