초록 ▼

A capacitor including a polysilicon layer doped with impurities to be conductive, a first dielectric layer formed on the polysilicon layer, a first conductive layer formed on the first dielectric layer, a second dielectric layer formed on the first conductive layer, and a second conductive layer for

A capacitor including a polysilicon layer doped with impurities to be conductive, a first dielectric layer formed on the polysilicon layer, a first conductive layer formed on the first dielectric layer, a second dielectric layer formed on the first conductive layer, and a second conductive layer formed on the first dielectric layer. The second conductive layer is coupled to the polysilicon layer.

대표청구항 ▼

What is claimed is: 1. A capacitor device, comprising: a polysilicon layer having a first area and a second area separately formed, and doped with impurities to be conductive; a first dielectric layer formed on the polysilicon layer; a first conductive layer formed on the first dielectric layer; a

What is claimed is: 1. A capacitor device, comprising: a polysilicon layer having a first area and a second area separately formed, and doped with impurities to be conductive; a first dielectric layer formed on the polysilicon layer; a first conductive layer formed on the first dielectric layer; a second dielectric layer formed on the first conductive layer; and a second conductive layer formed on the second dielectric layer, wherein the second conductive layer is coupled to the first area, wherein the first area and the first conductive layer form a first capacitor, wherein the second area and the first conductive layer form a second capacitor. 2. The capacitor device of claim 1, wherein the first conductive layer is a metal electrode layer. 3. The capacitor device of claim 1, wherein the first conductive layer and the second conductive layer are metal electrode layers. 4. A display device, comprising: a scan line extending in a first direction and transmitting a selection signal; a data line extending in a second direction crossing the scan line, and transmitting a data signal; and a pixel circuit coupled to the scan line and the data line, wherein the pixel circuit comprises: a first transistor coupled to the data line; a capacitor charging a voltage corresponding to the data signal transmitted through the first transistor; a second transistor having a control electrode coupled to a first electrode of the capacitor; and a light emission element coupled to the second transistor, wherein the capacitor comprises: a first conductive layer; a first dielectric layer formed on the first conductive layer; a second conductive layer formed on the first dielectric layer; a second dielectric layer formed on the second conductive layer; and a third conductive layer formed on the second dielectric layer, wherein the first conductive layer is a first polysilicon layer doped with impurities; and wherein the third conductive layer is coupled to the first conductive layer. 5. The display device of claim 4, further comprising: a second polysilicon layer forming a source area and a drain area of the first transistor and a source area and a drain area of the second transistor; wherein the first conductive layer is formed on a same layer as the second polysilicon layer; and wherein the first conductive layer and the second polysilicon layer are a same conductive type. 6. The display device of claim 5, wherein the second conductive layer is a metal electrode layer formed on a same layer as the scan line; and wherein the third conductive layer is a metal electrode layer formed on a same layer as the data line.