초록 ▼

In a programmable cell included in a first region, configuration information is stored in a volatile memory, while in a programmable cell included in a second region, configuration information is stored in a non-volatile memory. Configuration information for a sub-process common to a plurality of pr

In a programmable cell included in a first region, configuration information is stored in a volatile memory, while in a programmable cell included in a second region, configuration information is stored in a non-volatile memory. Configuration information for a sub-process common to a plurality of processes is stored in the non-volatile memory.

대표청구항 ▼

What is claimed is: 1. A programmable device comprising: a plurality of programmable cells comprising a first-type programmable cell and a second-type programmable cell, each of the plurality of programmable cells including an internal memory for storing configuration information input from outside

What is claimed is: 1. A programmable device comprising: a plurality of programmable cells comprising a first-type programmable cell and a second-type programmable cell, each of the plurality of programmable cells including an internal memory for storing configuration information input from outside and an arithmetic circuit for performing operation based on the configuration information stored in the internal memory; and a control circuit for outputting, to the first-type programmable cell and the second-type programmable cell, the configuration information and a control signal indicating in which programmable cell the configuration information is to be stored, wherein the first-type programmable cell includes a non-volatile memory as the internal memory; and the second-type programmable cell includes a volatile memory as the internal memory. 2. The programmable device of claim 1, wherein when the programmable device performs either a first or second process, both of the first and second processes including a common sub-process, the common sub-process is performed in the first-type programmable cell. 3. The programmable device of claim 1, wherein the plurality of programmable cells further comprises a third type of programmable cell which includes a read-only memory (ROM) having configuration information stored therein in advance and an arithmetic circuit for performing operation based on the configuration information stored in the ROM. 4. The programmable device of claim 1, further comprising: a first semiconductor chip, on which, of the components of the first-type programmable cell, the non-volatile memory is mounted; and a second semiconductor chip, on which the components other than the non-volatile memory are mounted, wherein the first semiconductor chip is electrically connected with the second semiconductor chip. 5. A programmable device comprising: a plurality of programmable cells comprising a first-type programmable cell and a second-type programmable cell, each of the plurality of programmable cells including an internal memory for storing configuration information input from outside and an arithmetic circuit for performing operation based on the configuration information stored in the internal memory; and a control circuit for outputting, to the second-type programmable cell, the configuration information and a first control signal indicating writing of the configuration information, the control circuit further outputting, to the first-type programmable cell, a second control signal, wherein the first-type programmable cell includes a non-volatile memory as the internal memory; the second-type programmable cell includes a volatile memory as the internal memory; the first-type programmable cell is configured to receive the configuration information from the second-type programmable cell, and the second control signal instructs that the configuration information received from the second-type programmable cell by the first-type programmable cell be written into the first-type programmable cell; and the control circuit asserts the first control signal and the second control signal individually. 6. The programmable device of claim 5, wherein the plurality of programmable cells comprises a plurality of the second-type programmable cells, and wherein sequential transmission of the configuration information is performed among the plurality of the second-type programmable cells. 7. The programmable device of claim 6, wherein threshold voltage of transistors forming the volatile memories in the second-type programmable cells is set so that transistors situated earlier in the sequential transmission of the configuration information have lower threshold voltages. 8. The programmable device of claim 5, wherein when the programmable device performs either a first or second process having a common sub-process, the common sub-process is performed in the first-type programmable cell. 9. The programmable device of claim 5, wherein the plurality of programmable cells further comprises a third type of programmable cell which includes a read-only memory (ROM) having configuration information stored therein in advance and an arithmetic circuit for performing operation based on the configuration information stored in the ROM. 10. The programmable device of claim 5, further comprising: a first semiconductor chip, on which, of the components of the first-type programmable cell, the non-volatile memory is mounted; and a second semiconductor chip, on which the components other than the non-volatile memory are mounted, wherein the first semiconductor chip is electrically connected with the second semiconductor chip. 11. A programmable device comprising: a plurality of programmable cells comprising a first-type programmable call and a second-type programmable cell, each of the plurality of programmable cells including an internal memory for storing configuration information input from the outside and an arithmetic circuit for performing operation based on the configuration information stored in the internal memory; and a control circuit for outputting, to the first-type programmable cell and the second-type programmable cell, the configuration information and a control signal indicating writing of the configuration information, wherein the first-type programmable cell includes a non-volatile memory as the internal memory; the second-type programmable cell includes a volatile memory as the internal memory; and when the programmable device performs either a first or second process, both of the first and second processes including a common sub-process, the common sub-process is performed entirely in the first-type programmable cell. 12. The programmable device of claim 11, wherein the plurality of programmable cells further comprises a third type of programmable cell which includes a read-only memory (ROM) having configuration information stored therein in advance and an arithmetic circuit for performing operation based on the configuration information stored in the ROM. 13. The programmable device of claim 11, further comprising: a first semiconductor chip, on which, of the components of the first-type programmable cell, the non-volatile memory is mounted; and a second semiconductor chip, on which the components other than the non-volatile memory are mounted, wherein the first semiconductor chip is electrically connected with the second semiconductor chip. 14. A programmable device comprising: a plurality of programmable cells comprising a first-type programmable cell and a second-type programmable cell, each of the plurality of programmable cells including an internal memory for storing configuration information input from outside and an arithmetic circuit for performing operation based on the configuration information stored in the internal memory; and a control circuit for outputting, to the second-type programmable cell, the configuration information and a first control signal indicating writing of the configuration information, the control circuit further outputting, to the first-type programmable cell, a second control signal, wherein the first-type programmable cell includes a non-volatile memory as the internal memory, the second-type programmable cell includes a volatile memory as the internal memory, the first-type programmable cell is configured to receive the configuration information from the second-type programmable cell, and the second control signal instructs that the configuration information received from the second-type programmable cell by the first-type programmable cell be written into the first-type programmable cell, and when the programmable device performs either a first or second process, both of the first and second processes including a common sub-process, the common sub-process is performed entirely in the first-type programmable cell. 15. The programmable device of claim 14, wherein the plurality of programmable cells comprise a plurality of the second-type programmable cells, and sequential transmission of the configuration information is performed among the plurality of the second-type programmable cells. 16. The programmable device of claim 15, wherein the threshold voltage of transistors forming the volatile memories in the second-type programmable cells is set so that transistors situated earlier in the sequential transmission of the configuration information have lower threshold voltages. 17. The programmable device of claim 14, wherein the plurality of programmable cells further comprise a third type of programmable cell which includes a read-only memory (ROM) having configuration information stored therein in advance and an arithmetic circuit for performing operation based on the configuration information stored in the ROM. 18. The programmable device of claim 14, further comprising: a first semiconductor chip, on which, of the components of the first-type programmable cell, the non-volatile memory is mounted; and a second semiconductor chip, on which the components other than the non-volatile memory are mounted, wherein the first semiconductor chip is electrically connected with the second semiconductor chip. 19. A programmable device comprising: a plurality of programmable cells comprising a first-type programmable cell and a plurality of second-type programmable cells, each of the plurality of programmable cells including an internal memory for storing configuration information input from outside and an arithmetic circuit for performing operations based on the configuration information stored in the internal memory; and a control circuit for outputting, to the second-type programmable cell, the configuration information and a first control signal indicating writing of the configuration information, the control circuit further outputting, to the first-type programmable call, a second control signal, wherein the first-type programmable cell includes a non-volatile memory as the internal memory, each of the plurality of second-type programmable cells includes a volatile memory as the internal memory, the first-type programmable cell is configured to receive the configuration information from one of the plurality of second-type programmable cells, and the second control signal instructs that the configuration information received from one of the plurality of second-type programmable cells by the first-type programmable cell be written into the first-type programmable cell, sequential transmission of the configuration information is performed among the plurality of second-type programmable cells, and threshold voltages of transistors forming the volatile memories in the second-type programmable cells is set so that transistors situated earlier in the sequential transmission of the configuration information have lower threshold voltages.