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Storage cell capacitor compatible with high dielectric constant materials

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-027/108
출원번호 US-0276639 (2006-03-08)
등록번호 US-7385240 (2008-06-10)
발명자 / 주소
  • Fazan,Pierre C.
  • Mathews,Viju K.
출원인 / 주소
  • Micron Technology, Inc.
대리인 / 주소
    Schwegman, Lundberg & Woessner, P.A.
인용정보 피인용 횟수 : 0  인용 특허 : 59

초록

An integrated circuit structure includes a digit line and an electrode adapted to be part of a storage cell capacitor and includes a barrier layer interposed between a conductive plug and an oxidation resistant layer. An insulative layer protects sidewalls of the barrier layer during deposition and

대표청구항

What is claimed is: 1. An integrated circuit structure, comprising: a buried digit line; and an electrode operatively connected to the buried digit line, the electrode including: a first portion formed in an insulative layer having an upper surface; a second portion overlying the first portion, whe

이 특허에 인용된 특허 (59)

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  4. Fazan Pierre C. (Boise ID) Sandhu Gurtej S. (Boise ID), Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for.
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