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| 국가/구분 | United States(US) Patent 등록 |
|---|---|
| 국제특허분류(IPC7판) |
|
| 출원번호 | US-0092031 (2005-03-28) |
| 등록번호 | US-7387868 (2008-06-17) |
| 발명자 / 주소 |
|
| 출원인 / 주소 |
|
| 대리인 / 주소 |
|
| 인용정보 | 피인용 횟수 : 1 인용 특허 : 382 |
A method of passivating silicon-oxide based low-k materials using a supercritical carbon dioxide passivating solution comprising a silylating agent is disclosed. The silylating agent is preferably an organosilicon compound comprising organo-groups with five carbon atoms such as hexamethyldisilazane
A method of passivating silicon-oxide based low-k materials using a supercritical carbon dioxide passivating solution comprising a silylating agent is disclosed. The silylating agent is preferably an organosilicon compound comprising organo-groups with five carbon atoms such as hexamethyldisilazane (HMDS), chlorotrimethylsilane (TMCS), trichloromethylsilane (TCMS) and combinations thereof. In accordance with further embodiments of the invention, a post ash substrate comprising a dielectric material is simultaneously cleaned and passivated using a supercritical carbon dioxide cleaning solution.
What is claimed is: 1. A method of treating a patterned surface of a dielectric material comprising: removing post-etch residue from a plurality of patterned features in a dielectric material with a passivating solution comprising a fluid and an amount of a silylating agent comprising organic group
What is claimed is: 1. A method of treating a patterned surface of a dielectric material comprising: removing post-etch residue from a plurality of patterned features in a dielectric material with a passivating solution comprising a fluid and an amount of a silylating agent comprising organic groups; and removing the passivating solution, wherein at least one of the plurality of patterned features is at least partially passivated with the organic groups, thereby restoring the k-value of the dielectric material to a pre-patterned value and resulting in the dielectric material being at least partially hydrophobic. 2. The method of claim 1, wherein the dielectric material comprises a low-k material. 3. The method of claim 1, wherein the dielectric material comprises an ultra-low-k material. 4. The method of claim 1, wherein the fluid comprises a supercritical fluid. 5. The method of claim 4, wherein the supercritical fluid comprises supercritical CO2. 6. The method of claim 1, wherein the organic groups comprise alkyl groups. 7. The method of claim 1, wherein the organic groups comprise less than six carbon atoms. 8. The method of claim 1, wherein the organic groups comprise an organosilicon compound. 9. The method of claim 8, wherein the organosilicon compound is selected from the group consisting of hexamethyldisilazane (HMDS), chlorotrimethylsilane (TMCS), trichloromethylsilane (TCMS), and combinations thereof. 10. The method of claim 1, wherein the passivating solution further comprises a carrier solvent. 11. The method of claim 10, wherein the carrier solvent is selected from the group consisting of N, N-dimethylacetamide (DMAc), gamma-butyrolactone (BLO), dimethyl sulfoxide (DMSO), ethylene carbonate (EC), N-methylpyrrolidone (NMP), dimethylpiperidone, propylene carbonate, alkane and combinations thereof. 12. The method of claim 1, wherein the dielectric material is maintained at temperatures in a range of approximately 40 degrees Celsius to approximately 250 degrees Celsius. 13. The method of claim 1, wherein the passivating solution is maintained at temperatures in a range of approximately 40 degrees Celsius to approximately 250 degrees Celsius. 14. The method of claim 1, wherein the removing post-etch residue from a plurality of patterned features in a dielectric material with a passivating solution further comprises circulating the passivating solution over the low-k surface. 15. The method of claim 1, wherein the passivating solution is maintained at pressures in a range of approximately 1,000 psi to approximately 9,000 psi. 16. The method of claim 1, further comprising drying at least one surface of the dielectric material prior to removing post-etch residue from a plurality of patterned features in a dielectric material with a passivating solution. 17. The method of claim 16, wherein the drying at least one surface comprises treating the at least one surface to a supercritical drying solution comprising supercritical carbon dioxide. 18. The method of claim 1, wherein the dielectric material comprises silicon-oxide. 19. The method of claim 1, wherein the dielectric material comprises a material selected from the group consisting of a carbon doped oxide (COD), a spin-on-glass (SOG), a fluoridated silicon glass (FSG), and combinations thereof. 20. A method of treating a patterned surface of a dielectric material, comprising: removing post ash residue from at least one patterned surface of a dielectric material with a supercritical cleaning solution; and treating the dielectric material with a passivating solution comprising a passivating agent in the supercritical cleaning solution to form a passivated dielectric surface, thereby restoring the k-value of the dielectric material to a pre-patterned value and resulting in the dielectric material being at least partially hydrophobic. 21. The method of claim 20, wherein the post ash residue comprises a polymer. 22. The method of claim 21, wherein the polymer is a photoresist polymer. 23. The method of claim 22, wherein the photoresist polymer comprises an anti-reflective dye. 24. The method of claim 20, wherein the dielectric material comprises a low-k material. 25. The method of claim 20, wherein the dielectric material comprises an ultra-low-k material. 26. The method of claim 20, wherein the post ash residue comprises an anti-reflective coating. 27. The method of claim 26, wherein the anti-reflective coating comprises an organic spin-on anti-reflective material. 28. The method of claim 20, wherein the passivating agent comprises an organosilicon compound. 29. The method of claim 28, wherein the organosilicon compound is selected from the group consisting of hexamethyldisilazane (HMDS), chlorotrimethylsilane (TMCS), trichloromethylsilane (TCMS) and combinations thereof. 30. A method of forming an at least partially hydrophobic patterned dielectric layer, the method comprising; depositing a continuous layer of dielectric material with an initial k-value; forming a photoresist mask over the continuous layer of dielectric material; patterning the continuous layer of dielectric material through the photoresist mask; removing the photoresist mask, thereby forming a post-ash residue and causing the dielectric material to have an intermediate k-value greater than the initial k-value; and removing the post-ash residue using a supercritical solution comprising supercritical fluid and a silicon-based passivating agent, thereby causing the dielectric material to have a post-passivating k-value greater than the intermediate k-value, and thereby causing the layer of dielectric material to be at least partially hydrophobic. 31. The method of claim 30, wherein the supercritical fluid comprises supercritical carbon dioxide. 32. The method of claim 30, wherein the silicon-based passivating agent comprises an organosilicon compound. 33. The method of claim 30, wherein the supercritical fluid further comprises a carrier solvent. 34. The method of claim 33, wherein the carrier solvent is selected from the group consisting of N, N-dimethylacetamide (DMAc), gamma-butyrolactone (BLO), dimethyl sulfoxide (DMSO), ethylene carbonate (EC), N-methylpyrrolidone (NMP), dimethylpiperidone, propylene carbonate, alkane and combinations thereof. 35. The method of claim 30, wherein the initial k-value is a low k-value. 36. The method of claim 30, wherein the initial k-value is an ultra-low k-value.
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