초록 ▼

A method of closely interconnecting integrated circuits contained within a semiconductor wafer to electrical circuits surrounding the semiconductor wafer. Electrical interconnects are held to a minimum in length by making efficient use of polyimide or polymer as an inter-metal dielectric thus enabli

A method of closely interconnecting integrated circuits contained within a semiconductor wafer to electrical circuits surrounding the semiconductor wafer. Electrical interconnects are held to a minimum in length by making efficient use of polyimide or polymer as an inter-metal dielectric thus enabling the integration of very small integrated circuits within a larger circuit environment at a minimum cost in electrical circuit performance.

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What is claimed is: 1. An integrated circuit chip comprising: a silicon substrate; multiple devices in and on said silicon substrate; a first dielectric layer over said silicon substrate; a first metallization structure over said first dielectric layer, wherein said first metallization structure co

What is claimed is: 1. An integrated circuit chip comprising: a silicon substrate; multiple devices in and on said silicon substrate; a first dielectric layer over said silicon substrate; a first metallization structure over said first dielectric layer, wherein said first metallization structure comprises a first metal layer and a second metal layer over said first metal layer, and wherein said first metallization structure comprises electroplated copper; a second dielectric layer between said first and second metal layers; a passivation layer over said first metallization structure and over said first and second dielectric layers, a first opening in said passivation layer exposing a first pad of said first metallization structure, a second opening in said passivation layer exposing a second pad of said first metallization structure, and a third opening in said passivation layer exposing a third pad of said first metallization structure, wherein said first, second and third pads are separate from one another, wherein said passivation layer comprises a topmost nitride layer of said integrated circuit chip and a topmost oxide layer of said integrated circuit chip; a second metallization structure over said passivation layer and over said first, second and third pads, wherein said second metallization structure comprises electroplated copper, wherein said second metallization structure comprises a third metal layer and a fourth metal layer over said third metal layer, said third metal layer having a thickness greater than those of said first and second metal layers, and said fourth metal layer having a thickness greater than those of said first and second metal layers, and wherein said first pad is connected to said second and third pads through a clock distribution network of said second metallization structure, and said second pad is connected to said third pad through said clock distribution network; and a first polymer layer between said third and fourth metal layers, wherein said first polymer layer has a thickness greater than those of said passivation layer, said first dielectric layer and said second dielectric layer. 2. The integrated circuit chip of claim 1 further comprising a second polymer layer over said passivation layer, a fourth opening in said second polymer layer exposing said first pad, a fifth opening in said second polymer layer exposing said second pad, and a sixth opening in said second polymer layer exposing said third pad, wherein said second metallization structure and said first polymer layer are over said second polymer layer. 3. The integrated circuit chip of claim 2, wherein said second polymer layer comprises polyimide. 4. The integrated circuit chip of claim 2, wherein said second polymer layer has a thickness between 2 and 30 micrometers. 5. The integrated circuit chip of claim 1, wherein said first polymer layer comprises polyimide. 6. The integrated circuit chip of claim 1, wherein said second metallization structure further comprises nickel. 7. The integrated circuit chip of claim 1, wherein said second metallization structure further comprises a sputtered metal. 8. An integrated circuit chip comprising: a silicon substrate; multiple devices in and on said silicon substrate; a first dielectric layer over said silicon substrate; a first metallization structure over said first dielectric layer, wherein said first metallization structure comprises a first metal layer and a second metal layer over said first metal layer, and wherein said first metallization structure comprises electroplated copper; a second dielectric layer between said first and second metal layers; an inorganic layer over said first and second dielectric layers; a first polymer layer over said inorganic layer, a first opening in said first polymer layer exposing a first pad of said first metallization structure, a second opening in said first polymer layer exposing a second pad of said first metallization structure, and a third opening in said first polymer layer exposing a third pad of said first metallization structure, wherein said first, second and third pads are separate from one another, wherein said first polymer layer has a thickness between 2 micrometers and 30 micrometers and greater than those of said inorganic layer, said first dielectric layer and said second dielectric layer; and a second metallization structure over said first polymer layer and over said first, second and third pads, wherein said second metallization structure comprises electroplated copper, wherein said second metallization structure comprises a third metal layer, with a thickness greater than those of said first and second metal layers, and a fourth metal layer, with a thickness greater than those of said first and second metal layers, over said third metal layer, and wherein said first pad is connected to said second and third pads through a clock distribution network of said second metallization structure, and said second pad is connected to said third pad through said clock distribution network; and a second polymer layer between said third and fourth metal layers, wherein said second polymer layer has a thickness greater than those of said inorganic layer, said first dielectric layer and said second dielectric layer. 9. The integrated circuit chip of claim 8, wherein said first polymer layer comprises polyimide. 10. The integrated circuit chip of claim 8, wherein said first polymer layer has a thickness between 2 micrometers and 30 micrometers. 11. The integrated circuit chip of claim 8, wherein said second polymer layer comprises polyimide. 12. The integrated circuit chip of claim 8, wherein said second metallization structure further comprises nickel. 13. The integrated circuit chip of claim 8, wherein said second metallization structure further comprises a sputtered metal. 14. The integrated circuit chip of claim 8, wherein said inorganic layer comprises nitride. 15. An integrated circuit chip comprising: a silicon substrate; multiple devices in and on said silicon substrate; a first dielectric layer over said silicon substrate; a first metallization structure over said first dielectric layer, wherein said first metallization structure comprises a first metal layer and a second metal layer over said first metal layer, and wherein said first metallization structure comprises aluminum; a second dielectric layer between said first and second metal layers; a passivation layer over said first metallization structure and over said first and second dielectric layers, a first opening in said passivation layer exposing a first pad of said first metallization structure, a second opening in said passivation layer exposing a second pad of said first metallization structure, and a third opening in said passivation layer exposing a third pad of said first metallization structure, wherein said first, second and third pads are separate from one another, wherein said passivation layer comprises a topmost nitride layer of said integrated circuit chip and a topmost oxide layer of said integrated circuit chip, wherein said topmost nitride layer is over said topmost oxide layer; a second metallization structure over said passivation layer and over said first, second and third pads, wherein said second metallization structure comprises electroplated copper, wherein said second metallization structure comprises a third metal layer, with a thickness greater than those of said first and second metal layers, and a fourth metal layer, with a thickness greater than those of said first and second metal layers, over said third metal layer, and wherein said first pad is connected to said second and third pads through a clock distribution network of said second metallization structure, and said second pad is connected to said third pad through said clock distribution network; and a first polymer layer between said third and fourth metal layers, wherein said first polymer layer has a thickness greater than those of said passivation layer, said first dielectric layer and said second dielectric layer. 16. The integrated circuit chip of claim 15 further comprising a second polymer layer over said passivation layer, a fourth opening in said second polymer layer exposing said first pad, a fifth opening in said second polymer layer exposing said second pad, and a sixth opening in said second polymer layer exposing said third pad, wherein said second metallization structure and said first polymer layer are over said second polymer layer. 17. The integrated circuit chip of claim 16, wherein said second polymer layer comprises polyimide. 18. The integrated circuit chip of claim 16, wherein said second polymer layer has a thickness between 2 micrometers and 30 micrometers. 19. The integrated circuit chip of claim 15, wherein said first polymer layer comprises polyimide. 20. The integrated circuit chip of claim 15, wherein said second metallization structure further comprises nickel. 21. The integrated circuit chip of claim 15, wherein said second metallization structure further comprises a sputtered metal.