Switching ratio and on-state resistance of an antifuse programmed below 5 mA and having a Ta or TaN barrier metal layer
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/479
H01L-021/02
출원번호
US-0078952
(2005-03-10)
등록번호
US-7390726
(2008-06-24)
발명자
/ 주소
Issaq,A. Farid
Hawley,Frank
출원인 / 주소
Actel Corporation
대리인 / 주소
Lewis and Roca, LLP
인용정보
피인용 횟수 :
20인용 특허 :
39
초록▼
A metal-to-metal antifuse is disposed between two metal interconnect layers in an integrated circuit. An insulating layer is disposed above a lower metal interconnect layer. The insulating layer includes a via formed therethrough containing a tungsten plug in electrical contact with the lower metal
A metal-to-metal antifuse is disposed between two metal interconnect layers in an integrated circuit. An insulating layer is disposed above a lower metal interconnect layer. The insulating layer includes a via formed therethrough containing a tungsten plug in electrical contact with the lower metal interconnect layer. An antifuse material layer comprising amorphous carbon is disposed above the upper surface of the tungsten plug. The antifuse material layer is disposed between adhesion-promoting layers. A layer of a barrier metal, consisting of either tantalum or tantalum nitride, is disposed over the antifuse layer to form an upper electrode of the antifuse. An oxide or tungsten hard mask provides high etch selectivity and the possibility to etch barrier metals without affecting the dielectric constant value and mechanical properties of the antifuse.
대표청구항▼
What is claimed is: 1. A method for programming an antifuse comprising: applying a first programming pulse of about 0.25 mA to about 0.5 mA to a first electrode of the antifuse, said antifuse comprising: a tungsten plug disposed in a via in an insulating layer disposed above and in electrical conta
What is claimed is: 1. A method for programming an antifuse comprising: applying a first programming pulse of about 0.25 mA to about 0.5 mA to a first electrode of the antifuse, said antifuse comprising: a tungsten plug disposed in a via in an insulating layer disposed above and in electrical contact with a lower metal interconnect layer forming a first electrode; an antifuse layer disposed above an upper surface of said tungsten plug, said antifuse layer comprising a lower adhesion-promoting layer, a middle layer comprising amorphous carbon, and an upper adhesion-promoting layer; and a layer of a barrier metal disposed over said antifuse layer forming a second electrode, said barrier metal comprising a material selected from a group consisting of at least one of tantalum and tantalum nitride; and applying a second programming pulse of about 0.25 mA to about 0.5 mA to said second electrode of the antifuse. 2. The method of claim 1, wherein said first programming pulse and said second programming pulse are each applied for about 10 μs. 3. The method of claim 1, further comprising: applying a first soaking pulse of about 2 mA to about 5 mA to said first electrode; and applying a second soaking pulse of about 2 mA to about 5 mA to said second electrode; and repeating applying said first soaking pulse and applying said second soaking pulse. 4. The method of claim 3, wherein said first programming pulse and said second programming pulse are applied for about 10 μs, and said first soaking pulse and said second soaking pulse are applied for about 1 ms. 5. The method of claim 1, wherein said applying said first programming pulse and said applying said second programming pulse are repeated at least four more times. 6. The method of claim 5, wherein said first programming pulse and said second programming pulse are applied for about 1 ms. 7. The method of claim 5, further comprising: applying a first soaking pulse of about 2 mA to about 5 mA to said first electrode; applying a second soaking pulse of about 2 mA to about 5 mA to said second electrode; and repeating said applying said first soaking pulse and said applying said second soaking pulse. 8. The method of claim 7, wherein said first programming pulse and said second programming pulse are applied for about 1 ms, and said first soaking pulse and said second soaking pulse are applied for about 1 ms. 9. A method for programming an antifuse comprising: applying a first programming pulse of about 0.25 mA to about 0.5 mA to a first electrode of the antifuse, said antifuse comprising: a tungsten plug disposed in a via in an insulating layer disposed above and in electrical contact with a lower metal interconnect layer; a first layer of a barrier metal disposed above and in electrical contact with said tungsten plug forming a first electrode, said first layer of said barrier metal comprising a material selected from a group consisting of at least one of tantalum and tantalum nitride; an antifuse layer disposed above an upper surface of said tungsten plug, said antifuse layer comprising a lower adhesion-promoting layer, a middle layer comprising amorphous carbon, and an upper adhesion-promoting layer; a second layer of a barrier metal disposed over said antifuse layer forming a second electrode, said second layer of said barrier metal comprising a material selected from a group consisting of at least one of tantalum and tantalum nitride; and a second insulating layer disposed over said first insulating layer, said antifuse layer, said first layer of said barrier metal, and said second layer of said barrier metal; and applying a second programming pulse of about 0.25 mA to about 0.5 mA to said second electrode of the antifuse. 10. The method of claim 9, wherein said first programming pulse and said second programming pulse are each applied for about 10 μs. 11. The method of claim 9, further comprising: applying a first soaking pulse of about 2 mA to about 5 mA to said first electrode; applying a second soaking pulse of about 2 mA to about 5 mA to said second electrode; and repeating applying said first soaking pulse and applying said second soaking pulse. 12. The method of claim 11, wherein said first programming pulse and said second programming pulse are applied for about 10 μs, and said first soaking pulse and said second soaking pulse are applied for about 1 ms. 13. The method of claim 9, wherein said applying said first programming pulse and said applying said second programming pulse are repeated at least four more times. 14. The method of claim 13, wherein said first programming pulse and said second programming pulse are applied for about 1 ms. 15. The method of claim 13, further comprising: applying a first soaking pulse of about 2 mA to about 5 mA to said first electrode; applying a second soaking pulse of about 2 mA to about 5 mA to said second electrode; and repeating said applying said first soaking pulse and said applying said second soaking pulse. 16. The method of claim 15, wherein said first programming pulse and said second programming pulse are applied for about 1 ms, and said first soaking pulse and said second soaking pulse are applied for about 1 ms. 17. A method for programming an antifuse comprising: applying a first programming pulse of about 0.25 mA to about 0.5 mA to a first electrode of the antifuse, said antifuse comprising: a first layer of a barrier metal disposed on a surface forming a first electrode, said first layer of said barrier metal comprising a material selected from a group consisting of at least one of tantalum and tantalum nitride; an antifuse layer disposed on said first layer of said barrier metal comprising a lower adhesion-promoting layer, a middle layer comprising amorphous carbon, and an upper adhesion-promoting layer; and a second layer of a barrier metal disposed over said antifuse layer forming a second electrode, said second layer of said barrier metal comprising a material selected from a group consisting of at least one of tantalum and tantalum nitride; and applying a second programming pulse of about 0.25 mA to about 0.5 mA to said second electrode of the antifuse. 18. The method of claim 17, wherein said first programming pulse and said second programming pulse are each applied for about 10 μs. 19. The method of claim 17, further comprising: applying a first soaking pulse of about 2 mA to about 5 mA to said first electrode; applying a second soaking pulse of about 2 mA to about 5 mA to said second electrode; and repeating applying said first soaking pulse and applying said second soaking pulse. 20. The method of claim 19, wherein said first programming pulse and said second programming pulse are applied for about 10 μs, and said first soaking pulse and said second soaking pulse are applied for about 1 ms. 21. The method of claim 17, wherein said applying said first programming pulse and said applying said second programming pulse are repeated at least four more times. 22. The method of claim 21, wherein said first programming pulse and said second programming pulse are applied for about 1 ms. 23. The method of claim 21, further comprising: applying a first soaking pulse of about 2 mA to about 5 mA to said first electrode; applying a second soaking pulse of about 2 mA to about 5 mA to said second electrode; and repeating said applying said first soaking pulse and said applying said second soaking pulse. 24. The method of claim 23, wherein said first programming pulse and said second programming pulse are applied for about 1 ms, and said first soaking pulse and said second soaking pulse are applied for about 1 ms. 25. A method for programming an antifuse comprising: applying a first low current programming pulse to a first electrode of the antifuse, said antifuse comprising: a tungsten plug disposed in a via in an insulating layer disposed above and in electrical contact with a lower metal interconnect layer; a first layer of a barrier metal disposed above and in electrical contact with said tungsten plug forming a first electrode, said first layer of said barrier metal comprising a material selected from a group consisting of at least one of tantalum and tantalum nitride; an antifuse layer disposed above an upper surface of said tungsten plug, said antifuse layer comprising a lower adhesion-promoting layer, a middle layer comprising amorphous carbon, and an upper adhesion-promoting layer; a second layer of a barrier metal disposed over said antifuse layer forming a second electrode, said second layer of said barrier metal comprising a material selected from a group consisting of at least one of tantalum and tantalum nitride; and a second insulating layer disposed over said first insulating layer, said antifuse layer, said first layer of said barrier metal, and said second layer of said barrier metal; applying a second low current programming pulse to said second electrode; applying a first high current soaking pulse to said first electrode; and applying a second high current soaking pulse to said second electrode. 26. A method for programming an antifuse comprising: applying a first low current programming pulse to a first electrode of the antifuse, said antifuse comprising: a tungsten plug disposed in a via in an insulating layer disposed above and in electrical contact with a lower metal interconnect layer; a first layer of a barrier metal disposed above and in electrical contact with said tungsten plug forming a first electrode, said first layer of said barrier metal comprising a material selected from a group consisting of at least one of tantalum and tantalum nitride; an antifuse layer disposed above an upper surface of said tungsten plug, said antifuse layer comprising a lower adhesion-promoting layer, a middle layer comprising amorphous carbon, and an upper adhesion-promoting layer; a second layer of a barrier metal disposed over said antifuse layer forming a second electrode, said second layer of said barrier metal comprising a material selected from a group consisting of at least one of tantalum and tantalum nitride; and a second insulating layer disposed over said first insulating layer, said antifuse layer, said first layer of said barrier metal, and said second layer of said barrier metal; applying a second low current programming pulse to said second electrode; applying a first high current soaking pulse to said first electrode; and applying a second high current soaking pulse to said second electrode. 27. A method for programming an antifuse comprising: applying a first low current programming pulse to a first electrode of the antifuse, said antifuse comprising: a first layer of a barrier metal disposed on a surface forming a first electrode, said first layer of said barrier metal comprising a material selected from a group consisting of at least one of tantalum and tantalum nitride; an antifuse layer disposed on said first layer of said barrier metal comprising a lower adhesion-promoting layer, a middle layer comprising amorphous carbon, and an upper adhesion-promoting layer; and a second layer of a barrier metal disposed over said antifuse layer forming a second electrode, said second layer of said barrier metal comprising a material selected from a group consisting of at least one of tantalum and tantalum nitride; applying a second low current programming pulse to said second electrode; applying a first high current soaking pulse to said first electrode; and applying a second high current soaking pulse to said second electrode.
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이 특허에 인용된 특허 (39)
Hawley Frank W. (Campbell CA) Yen Yeouchung (San Jose CA), Above via metal-to-metal antifuse.
Hawley, Frank W.; Issaq, A. Farid; McCollum, John L.; Gangopadhyay, Shubhra M.; Lubguban, Jorge A.; Shen, Jin Miao, Amorphous carbon metal-to-metal antifuse with adhesion promoting layers.
Forouhi Abdul R. (San Jose CA) Hamdy Esmat Z. (Fremont CA) Hu Chenming (Alamo CA) McCollum John L. (Saratoga CA), Electrically programmable antifuse and fabrication processes.
McCollum John L. (Saratoga CA) Chen Shih-Ou (Fremont CA), Electrically programmable antifuse element incorporating a dielectric and amorphous silicon interlayer.
Forouhi Abdul R. (San Jose CA) McCollum John L. (Saratoga CA) Chen Shih-Oh (Fremont CA), Electrically programmable antifuse incorporating dielectric and amorphous silicon interlayer.
Forouhi Abdul R. ; Hawley Frank W. ; McCollum John L. ; Yen Yeouchung, Fabrication method for metal-to-metal antifuses incorporating a tungsten via plug.
Chiang Steve S. (Saratoga CA) Elashmawi Esam (San Jose CA) Speers Theodore M. (San Leandro CA) Winemberg LeRoy (Fremont CA), Methods of reducing anti-fuse resistance during programming.
Yang, Hongning; Nguyen, Tue, Use of a silicon carbide adhesion promoter layer to enhance the adhesion of silicon nitride to low-k fluorinated amorphous carbon.
Ping, Er-Xuan; Xu, Huiwen; Schricker, April D.; Jayasekara, Wipul Pemsiri, Electronic devices including carbon nano-tube films having carbon-based liners, and methods of forming the same.
Or-Bach, Zvi; Tour, James M.; Sinitskiy, Alexander; Yao, Jun; Beitler, Elvira, Method for fabrication of a semiconductor element and structure thereof.
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