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특허 상세정보

Top layers of metal for high performance IC's

특허상세정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) H01L-021/4763    H01L-021/02   
미국특허분류(USC) 438/618; 438/623; 438/625; 438/687; 257/E23.161
출원번호 US-0845775 (2007-08-27)
등록번호 US-7396756 (2008-07-08)
발명자 / 주소
출원인 / 주소
인용정보 피인용 횟수 : 9  인용 특허 : 160
초록

A method of closely interconnecting integrated circuits contained within a semiconductor wafer to electrical circuits surrounding the semiconductor wafer. Electrical interconnects are held to a minimum in length by making efficient use of polyimide or polymer as an inter-metal dielectric thus enabling the integration of very small integrated circuits within a larger circuit environment at a minimum cost in electrical circuit performance.

대표
청구항

What is claimed is: 1. A method for fabricating an integrated circuit chip comprising: providing a silicon substrate, multiple devices in and on said silicon substrate, wherein said multiple devices comprise a transistor, a first dielectric layer over said silicon substrate, a first metallization structure over said first dielectric layer, wherein said first metallization structure comprises aluminum, and wherein said first metallization structure comprises a first metal layer and a second metal layer over said first metal layer, a second dielectric lay...

이 특허에 인용된 특허 (160)

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