초록 ▼

A metallization layer that includes a tantalum layer located on the component, a tantalum silicide layer located on the tantalum layer, and a platinum silicide layer located on the tantalum silicide layer. In another embodiment the invention is a component having a metallization layer on the compone

A metallization layer that includes a tantalum layer located on the component, a tantalum silicide layer located on the tantalum layer, and a platinum silicide layer located on the tantalum silicide layer. In another embodiment the invention is a component having a metallization layer on the component. In another embodiment, the metallization layer has a post-annealing adhesive strength to silicon of at least about 100 MPa as measured by a mechanical shear test after exposure to a temperature of about 600�� C. for about 30 minutes, and the metallization layer remains structurally intact after exposure to a temperature of about 600�� C. for about 1000 hours. The metallization is useful for bonding with brazing alloys.

대표청구항 ▼

What is claimed is: 1. A component comprising: a substrate selected from the group consisting of semiconductor materials, ceramics, glasses, nonmetallic materials, and combinations of these materials; and an annealed metallization layer including: an adhesion layer selected from the group consistin

What is claimed is: 1. A component comprising: a substrate selected from the group consisting of semiconductor materials, ceramics, glasses, nonmetallic materials, and combinations of these materials; and an annealed metallization layer including: an adhesion layer selected from the group consisting of compounds that are the reaction product of the substrate and a metal selected from the group consisting of tantalum, chromium, zirconium, and hafnium; a first diffusion blocking layer of a compound selected from the group consisting of tantalum silicide, tantalum carbide and tungsten nitride; and a second diffusion blocking layer of platinum silicide. 2. The component of claim 1 wherein: the metallization layer includes a tantalum layer located on the substrate, a tantalum silicide first diffusion blocking layer located on the tantalum layer, and a platinum silicide second diffusion blocking layer located on the tantalum silicide layer. 3. The component of claim 2 wherein each of the tantalum, tantalum silicide and platinum silicide layers have a thickness of between about 100 Angstroms and about 10,000 Angstroms. 4. The component of claim 2 wherein the component additionally includes a bonding agent located on the platinum silicide layer, the bonding agent being a brazing alloy, a eutectic alloy, or a binary alloy. 5. The component of claim 2 wherein said substrate is silicon and the reaction product of the substrate and the tantalum layer is a second tantalum silicide layer. 6. The component of claim 5 wherein the second tantalum silicide layer is located between the tantalum layer and the substrate. 7. The component of claim 1 wherein the substrate is a silicon or a ceramic material. 8. The component of claim 1 wherein the substrate is silicon. 9. The component of claim 1 wherein an auxiliary component is bonded to the substrate by a bonding agent located between the substrate and the auxiliary component, the bonding agent being coupled to the metallization layer to thereby join the substrate and the auxiliary component. 10. The component of claim 9 wherein the substrate is a wafer or part of a wafer and the auxiliary component is a housing for the wafer or part of the wafer. 11. The component of claim 10 wherein the wafer or part of the wafer is generally cylindrical and the housing is generally tubular and receives the wafer or part of the wafer therein. 12. The component of claim 11 wherein the wafer or part of the wafer is radially compressed by the housing. 13. The component of claim 11 wherein the wafer or part of the wafer has a circumferential surface and the metallization layer is located on the circumferential surface of the wafer or part of the wafer. 14. The component of claim 9 wherein the substrate is a ceramic and the auxiliary component is metal. 15. The component of claim 9 wherein the substrate and the auxiliary component are both silicon wafers or parts of silicon wafers. 16. The component of claim 15 wherein the auxiliary component includes an auxiliary substrate and an auxiliary component metallization layer including a tantalum layer located on the auxiliary substrate, a tantalum silicide layer located on the tantalum layer, and a platinum silicide layer located on the tantalum silicide layer. 17. The component of claim 16 wherein the bonding agent is located between and coupled to the metallization layer of the substrate and the metallization layer of the auxiliary component. 18. The component of claim 17 wherein the metallization layer selectively covers the substrate and the auxiliary metallization layer selectively covers the auxiliary substrate, and wherein the metallization layer and the auxiliary metallization layer are arranged in complementary shapes such that the metallization layer and the auxiliary component metallization layer are aligned with each other. 19. The component of claim 1 wherein said component is made of semiconductor materials, ceramics, glasses, nonmetallic materials, or combinations of these materials. 20. A metallized component including: a substrate; and a metallization layer on the substrate, the metallization layer having an adhesive strength to silicon of at least about 50 MPa after exposure to a temperature of about 600�� C. for about 30 minutes as measured by a mechanical shear test, and wherein the metallization layer remains structurally intact after exposure to a temperature of about 600�� C. for about 1000 hours, wherein the metallization layer includes a tantalum layer located on the substrate, a tantalum silicide layer located on the tantalum layer, and a platinum silicide layer located on the tantalum silicide layer. 21. The component of claim 20 wherein the metallization layer resists significant diffusion therethrough such that after exposing the metallized component to a temperature of about 600�� C. for 50 hours, no new layers of any material form in the metallization layer due to diffusion which have mass greater than about 1% of the metallization layer as measured by x-ray photoelectron spectroscopy analysis. 22. The component of claim 20 wherein the substrate is silicon and the metallization layer further includes a second tantalum silicide layer located between the tantalum layer and the substrate. 23. The component of claim 20 wherein the substrate is a semiconductor material or a ceramic material. 24. The component of claim 20 wherein the metallization layer is electrically coupled to an electronic structure located on or supported by the substrate. 25. The component of claim 20 further including an auxiliary component and a bonding agent located between the component and the auxiliary component, the bonding agent being coupled to the metallization layer to thereby join the component and the auxiliary component. 26. The component of claim 25 wherein the bonding agent is a brazing alloy, or a eutectic alloy, or a binary alloy. 27. A system comprising: metallized component including: a substrate; and a metallization layer on the substrate, the metallization layer having an adhesive strength to silicon of at least about 50 MPa after exposure to a temperature of about 600�� C. for about 30 minutes as measured by a mechanical shear test, and wherein the metallization layer remains structurally intact after exposure to a temperature of about 600�� C. for about 1000 hours; an auxiliary component, and a bonding agent located between the component and the auxiliary component, the bonding agent being coupled to the metallization layer to thereby join the component and the auxiliary component wherein the auxiliary component includes an auxiliary component metallization layer having an adhesive strength to silicon of at least about 50 MPa as measured by a mechanical shear test after exposure to a temperature of about 600�� C. for about 30 minutes, and wherein the auxiliary component metallization layer remains structurally intact after exposure to a temperature of about 600�� C. for 1000 hours. 28. The component of claim 27 wherein the auxiliary component metallization layer includes a tantalum layer located on the auxiliary component, a tantalum silicide layer located on the tantalum layer, and a platinum silicide layer located on the tantalum silicide layer. 29. The component of claim 27 wherein the bonding agent is located between and coupled to the metallization layer of the component and the metallization layer of the auxiliary component. 30. A method for forming a system comprising the steps of: providing a substrate; applying a metallization layer on the substrate, the metallization layer including a tantalum layer on the substrate, a tantalum silicide layer on the tantalum layer, and a platinum layer on the tantalum silicide layer. 31. The method of claim 30 further including the step of annealing the metallization layer. 32. The method of claim 31 wherein the substrate is silicon and the annealing step causes the creation of a tantalum silicide outward diffusion blocking layer located between the tantalum layer and the substrate. 33. The method of claim 31 wherein the annealing step converts the platinum layer to platinum silicide. 34. The method of claim 31 wherein the annealing step includes exposing the metallization layer to a temperature of at least about 460�� C. 35. The method of claim 30 wherein the applying step includes depositing the tantalum layer, the tantalum silicide layer and the platinum layer by plasma enhanced physical vapor deposition. 36. The method of claim 30 wherein the applying step includes depositing the tantalum silicide layer on the substrate by depositing alternating layers of tantalum and silicon and then annealing the alternating layers. 37. The method of claim 30 further comprising the step of, prior to the applying step, cleaning the substrate to remove oxides therefrom. 38. The method of claim 30 wherein each of the tantalum, tantalum silicide and platinum layers have thicknesses between about 100 Angstroms and about 10,000 Angstroms. 39. The method of claim 30 further including the steps of providing an auxiliary component, applying a bonding agent between the substrate and the auxiliary component or positioning the substrate and the auxiliary component such that the bonding agent is located therebetween. 40. The method of claim 39 wherein the auxiliary component includes an auxiliary metallization layer and wherein the metallization layer selectively covers the substrate and the auxiliary metallization layer selectively covers the auxiliary component, and wherein the metallization layer and the auxiliary metallization layer are arranged in complementary shapes such that the metallization layers are generally aligned when the substrate and the auxiliary component are aligned with each other in the manner of a flip chip bonding process. 41. A metallization or bonding layer for use on a substrate including: an adhesion layer selected from the group consisting of compounds that are the reaction product of the substrate and a metal selected from the group consisting of tantalum, chromium, zirconium, and hafnium; a first diffusion blocking layer of a compound selected from the group consisting of tantalum silicide, tantalum carbide and tungsten nitride; and a second diffusion blocking layer of platinum silicide. 42. The layer of claim 41 wherein the metallization or bonding layer includes a tantalum layer located on the substrate, a tantalum silicide layer located on the tantalum layer, and a platinum silicide layer located on the tantalum silicide layer. 43. A system comprising: a component; and a metallization layer on said component, said metallization layer including a tantalum layer located on said component, a tantalum silicide layer located on said tantalum layer, and a platinum layer located on said tantalum silicide layer. 44. The system of claim 43 wherein each of said tantalum, tantalum silicide and platinum layers have a thickness between about 100 Angstroms and about 10,000 Angstroms. 45. A system comprising: a component; a metallization layer on said component, said metallization layer including a tantalum layer located on said component, a tantalum silicide layer located on said tantalum layer, and a platinum silicide layer located on said tantalum silicide layer; and a bonding structure located on said metallization layer, said bonding structure including a hypoeutectic gold-germanium solid solution alloy, a hypoeutectic gold-silicon solid solution alloy, or a hypoeutectic gold-tin solid solution alloy. 46. The system of claim 45 further comprising an auxiliary component coupled to said component via said bonding structure. 47. The system of claim 46 wherein said auxiliary component incudes an auxiliary metallization layer located thereon, said auxiliary metallization layer including a tantalum layer located on said auxiliary component, a tantalum silicide layer located on said tantalum layer, and a platinum silicide layer located on said tantalum silicide layer. 48. A method for bonding two components together comprising the steps of: providing a first component having a metallization layer located thereon, said metallization layer including a tantalum layer located on said component, a tantalum silicide layer located on said tantalum layer, and a platinum silicide layer located on said tantalum silicide layer; providing a second component having a metallization layer located thereon, said metallization layer of said second component including a tantalum layer located on said second component, a tantalum silicide layer located on said tantalum layer, and a platinum silicide layer located on said tantalum silicide layer; locating a first eutectic bonding material between said first and second component, said first eutectic bonding material comprising at least one of germanium, tin, or silicon; locating a second eutectic bonding material between said first and second component and adjacent to said first eutectic bonding material, said second eutectic bonding material comprising gold; heating said first and second eutectic bonding materials to a temperature above a eutectic temperature of an alloy of said first and second eutectic bonding materials to allow a hypoeutectic alloy to form out of said first and second eutectic bonding materials; and cooling said hypoeutectic alloy to form a solid solution alloy bonding said first and second components together.