초록 ▼

Methods of fabricating light emitting diodes and light emitting devices are provided that include a substrate, an n-type epitaxial region on the substrate and a p-type epitaxial region on the n-type epitaxial region. At least a portion of the p-type epitaxial region comprises a mesa with respect to

Methods of fabricating light emitting diodes and light emitting devices are provided that include a substrate, an n-type epitaxial region on the substrate and a p-type epitaxial region on the n-type epitaxial region. At least a portion of the p-type epitaxial region comprises a mesa with respect to the substrate. An ohmic contact is provided on an exposed portion of the p-type epitaxial layer. The ohmic contact is self aligned to a sidewall of the mesa and to the p-type epitaxial layer such that a sidewall of the ohmic contact is substantially aligned with a sidewall of the mesa and to the p-type epitaxial layer.

대표청구항 ▼

That which is claimed is: 1. A light emitting device, comprising: a substrate; an n-type epitaxial region on the substrate; a p-type epitaxial region on the n-type epitaxial region, at least a portion of the p-type epitaxial region comprising a mesa with respect to the substrate, wherein the mesa h

That which is claimed is: 1. A light emitting device, comprising: a substrate; an n-type epitaxial region on the substrate; a p-type epitaxial region on the n-type epitaxial region, at least a portion of the p-type epitaxial region comprising a mesa with respect to the substrate, wherein the mesa has opposing sidewalls extending completely through the p-type epitaxial region, and wherein portions of the p-type epitaxial region adjacent the opposing sidewalls of the mesa have an increased resistance relative to other portions thereof; an ohmic contact on an exposed portion of the p-type epitaxial region, wherein opposing sidewalls of the ohmic contact are substantially aligned with the opposing sidewalls of the mesa and to the p-type epitaxial region. 2. The light emitting device of claim 1, wherein a sidewall of the mesa is configured such that a portion of the substrate extends beyond the sidewall of the mesa. 3. The light emitting device of claim 1, wherein the opposing sidewalls of the mesa extend completely through the n-type epitaxial region, and wherein portions of the n-type epitaxial region of the mesa adjacent the opposing sidewalls of the mesa have an increased resistance relative to other portions thereof. 4. The light emitting device of claim 3, wherein the mesa has a sidewall extending to the substrate. 5. The light emitting device of claim 1, wherein the light emitting device comprises a light emitting diode. 6. The light emitting device of claim 1, wherein the light emitting device comprises a laser diode. 7. The light emitting device of claim 1, wherein the p-type epitaxial region comprises a Group III-nitride epitaxial layer and the n-type epitaxial region comprises a Group III-nitride epitaxial layer. 8. The light emitting device of claim 7, wherein the substrate comprises a SiC substrate. 9. The light emitting device of claim 7, wherein the substrate comprises a sapphire substrate. 10. The light emitting device of claim 7, wherein the ohmic contact comprises platinum. 11. The light emitting device of claim 1, further comprising: a mask on the ohmic contact opposite the p-type epitaxial region, wherein opposing sidewalls of the mask are substantially aligned with opposing sidewalls of the ohmic contact and with the opposing sidewalls of the mesa.