초록 ▼

An automatic high-precision layer cutting device for separating a layer from a semiconductor substrate. The device includes a fixed positioning member for receiving at least a portion of a semiconductor substrate that has a weakened area therein and a peripheral annular notch located below the weake

An automatic high-precision layer cutting device for separating a layer from a semiconductor substrate. The device includes a fixed positioning member for receiving at least a portion of a semiconductor substrate that has a weakened area therein and a peripheral annular notch located below the weakened area. The positioning member maintains the position of the substrate on a moveable support. A cutting mechanism having at least one blade is provided for contacting the substrate and inducing a cleaving wave therein. The cutting mechanism is operatively associated with the positioning member so that the as at least one blade contacts the annular notch, the positioning member prevents movement of the substrate and the moveable support moves away from the substrate to allow the cleaving wave to both divide the substrate at the notch into first and second parts and detach the layer from the substrate along the weakened area.

대표청구항 ▼

What is claimed is: 1. An automatic high-precision layer cutting device for separating a layer from a semiconductor substrate comprising: a fixed positioning member for receiving at least a portion of a semiconductor substrate that has a weakened area therein and a peripheral annular notch that is

What is claimed is: 1. An automatic high-precision layer cutting device for separating a layer from a semiconductor substrate comprising: a fixed positioning member for receiving at least a portion of a semiconductor substrate that has a weakened area therein and a peripheral annular notch that is located away from the weakened area, the positioning member maintaining a predetermined position of the substrate on a movable support; and a cutting mechanism having at least one blade for contacting the substrate and for inducing a cleaving wave into the substrate, the cutting mechanism being operatively associated with the positioning member so that the at least one blade contacts the annular notch and the positioning member prevents movement of the substrate laterally due to contact by the at least one blade, so that the at least one blade can induce a cleaving wave of sufficient intensity to both divide the substrate at the notch into first and second parts and detach the layer from the substrate along the weakened area while the support moves away from the substrate so as to not restrict vertical movement of the divided substrate, wherein the positioning member comprises at least one shim oriented vertically with respect to the support with the shim having a contour that covers at least one quarter of the periphery of the substrate to hold the wafer when contacted by the blade, and wherein the at least one blade has a leading edge that has a contour that corresponds to the contour of the semiconductor substrate and covers at least one quarter of the periphery of the substrate. 2. The device of claim 1, wherein the moveable support is a support substrate that is operatively associated with the positioning member so that the positioning member maintains the position of the semiconductor substrate in a cutting plane that is parallel to the at least one blade and the support substrate. 3. The device of claim 1, wherein the movable support moves away from the substrate as the blade contacts the annular notch so that the positioning member and blade are the only structures supporting the substrate. 4. The device of claim 1, wherein the at least one blade is moveable toward and away from the positioning member in a cutting plane from a first position where the blade is retracted to allow positioning of the substrate in the device and a second position wherein the blade contacts the annular notch. 5. The device of claim 1, wherein the positioning member is affixed to a chassis. 6. The device of claim 1, which further comprises a blade position adjustment element for adjusting the blade along a direction perpendicular to the cutting plane so that the blade can be placed to contact the notch of substrates having different thicknesses. 7. The device of claim 6, which further comprises a movement member for displacing the blade by a predetermined translation in the cutting plane. 8. The device of claim 7, wherein the movement member controls the blade to translate in either a continuous or intermittent manner to cut the substrate. 9. The device of claim 1, wherein the tip of the blade has a vertex angle on the order of 60��. 10. The device of claim 1, wherein a leading edge of the blade has a circular contour corresponding to a contour of the semiconductor substrate. 11. The device of claim 10, wherein the blade leading edge covers one quarter of the periphery of the assembly. 12. The device of claim 1, wherein a section of the positioning member has an arcuate contour that corresponds to the contour of the semiconductor substrate. 13. The device of claim 1, wherein the cutting mechanism includes a first cutting device and a second cutting device. 14. The device of claim 13 which further comprises a sensor capable of acquiring at least one parameter representing progress of a cutting operation by the first cutting device, and a trigger device to initiate use of the second cutting device when the parameter reaches a predetermined value. 15. The device of claim 14, wherein the parameter is related to a measurement of the separation between layers being separated. 16. The device of claim 13, wherein the first cutting device comprises a first blade, and the second cutting device comprises second and third blades, and wherein the blades are arranged symmetrically about the annular notch. 17. The device of claim 16, wherein the second and third blades of the second cutting device are moveably mounted on second and third displacement devices, respectively, such that a leading edge of the second and third blades is oriented to tangentially attack the annular notch. 18. The device of claim 1, wherein the support includes a transparent window located below the substrate. 19. The device of claim 18, which further comprises a sensor positioned to view the progress of the cleaving wave through the transparent window.