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Substrate processing method

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/66
출원번호 US-0874245 (2004-06-24)
등록번호 US-7407821 (2008-08-05)
우선권정보 JP-2003-185061(2003-06-27)
발명자 / 주소
  • Wang,Xinming
  • Takagi,Daisuke
  • Tashiro,Akihiko
  • Fukunaga,Akira
출원인 / 주소
  • Ebara Corporation
대리인 / 주소
    Wenderoth, Lind & Ponack, L.L.P.
인용정보 피인용 횟수 : 0  인용 특허 : 22

초록

There is provided a substrate processing method and apparatus which can measure and monitor thickness and/or properties of a film formed on a substrate as needed, and quickly correct a deviation in process conditions, and which can therefore stably provide a product of constant quality. A substrate

대표청구항

What is claimed is: 1. A method comprising: on a substrate having a metal portion and an insulating material portion, with metal of said metal portion and insulating material of said insulating material portion exposed at a surface of said substrate, selectively forming a coating film on an exposed

이 특허에 인용된 특허 (22)

  1. Li Leping (Poughkeepsie NY) Barbee Steven George (Dover Plains NY) Halperin Arnold (Cortlandt Manor NY), Chemical mechanical polishing endpoint process control.
  2. Sambucetti, Carlos Juan; Chen, Xiaomeng; Seo, Soon-Cheon; Agarwala, Birenda Nath; Hu, Chao-Kun; Lustig, Naftali Eliahu; Greco, Stephen Edward, Chip to wiring interface with single metal alloy layer applied to surface of copper interconnect.
  3. Brayden ; Jr. Thomas H. ; Winters ; Jr. Thomas D., Coating thickness measurement system and method of measuring a coating thickness.
  4. Jon Opsal ; Allan Rosencwaig, Critical dimension analysis with simultaneous multiple angle of incidence measurements.
  5. Li Leping (Poughkeepsie NY) Barbee Steven George (Dover Plains NY) Halperin Arnold (Cortlandt Manor NY), Endpoint detection for chemical mechanical polishing using frequency or amplitude mode.
  6. Li Leping (Poughkeepsie NY) Barbee Steven George (Dover Plains NY) Halperin Arnold (Cortlandt Manor NY) Heinz Tony Frederick (Chappaqua NY), In-situ monitoring of conductive films on semiconductor wafers.
  7. Li Leping (Poughkeepsie NY) Barbee Steven G. (Dover Plains NY) Halperin Arnold (Cortlandt Manor NY) Heinz Tony F. (Chappaqua NY), In-situ monitoring of the change in thickness of films.
  8. Maydan Dan (Los Altos Hills CA) Somekh Sasson (Redwood City CA) Kaczorowski Edward M. (Santa Clara CA), Laser interferometer system and method for monitoring and controlling IC processing.
  9. Tsuchiya, Yasuaki; Kubo, Akira, Method of manufacturing semiconductor device.
  10. Poris, Jaime, Method of measuring dishing using relative height measurement.
  11. Alba Simone,ITX ; Savoia Claudio,ITX ; Bellandi Enrico,ITX ; Canali Francesca,ITX, Method of measuring the thickness of a layer of silicon damaged by plasma etching.
  12. Liu Chung-Shi,TWX ; Yu Chen-Hua,TWX, Method to eliminate dishing of copper interconnects.
  13. Kleinknecht Hans P. (Bergdietikon CHX) Kane James (Zumikon CHX), Optically monitoring the thickness of a depositing layer.
  14. Blayo Nadine (Jersey City NJ) Ibbotson Dale E. (Bridgewater NJ) Lee Tseng-Chung (New York NY), Process for fabricating a device using an ellipsometric technique.
  15. Naoki Komai JP; Yuji Segawa JP; Takeshi Nogami JP, Process for fabricating a semiconductor device.
  16. Chen, Xiaomeng; Krishnan, Mahadevaiyer; Rubino, Judith M.; Sambucetti, Carlos J.; Seo, Soon-Cheon; Tornello, James A., Process to increase reliability CuBEOL structures.
  17. Li Leping ; Barbee Steven George ; Halperin Arnold ; Ruggiero Richard Mars ; Surovie William Joseph, Rotary signal coupling for chemical mechanical polishing endpoint detection with a strasbaugh tool.
  18. Li Leping (Poughkeepsie NY) Barbee Steven George (Dover Plains NY) Doyle Gary Richard (Jonesville VT) Halperin Arnold (Cortlandt Manor NY) Holland Kevin L. (Newburgh NY) Kazak Francis Walter (Essex J, Rotary signal coupling for chemical mechanical polishing endpoint detection with a westech tool.
  19. Brooke M. Noack ; Tim Z. Hossain, Scattered incident X-ray photons for measuring surface roughness of a semiconductor topography.
  20. Zhao Bin (Austin TX) Vasudev Prahalad K. (Austin TX) Dubin Valery M. (Cupertino CA) Shacham-Diamand Yosef (Ithaca NY) Ting Chiu H. (Saratoga CA), Selective electroless copper deposited interconnect plugs for ULSI applications.
  21. Stefani Jerry A. (Richardson TX) Butler Stephanie W. (Plano TX), System and method for monitoring and evaluating semiconductor wafer fabrication.
  22. Dubin Valery M. (Cupertino CA) Schacham-Diamand Yosi (Ithaca NY) Zhao Bin (Irvine CA) Vasudev Prahalad K. (Austin TX) Ting Chiu H. (Saratoga CA), Use of cobalt tungsten phosphide as a barrier material for copper metallization.
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