Defectivity and process control of electroless deposition in microelectronics applications
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/3205
H01L-021/02
출원번호
US-0230912
(2005-09-20)
등록번호
US-7410899
(2008-08-12)
발명자
/ 주소
Chen,Qingyun
Valverde,Charles
Paneccasio,Vincent
Petrov,Nicolai
Stritch,Daniel
Witt,Christian
Hurtubise,Richard
출원인 / 주소
Enthone, Inc.
대리인 / 주소
Senniger Powers LLP
인용정보
피인용 횟수 :
6인용 특허 :
11
초록
Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.
대표청구항▼
What is claimed is: 1. A method for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices, the method comprising: contacting the substrate with an electroless deposition composition comprising (a) a grain refiner comprising a grain refiner com
What is claimed is: 1. A method for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices, the method comprising: contacting the substrate with an electroless deposition composition comprising (a) a grain refiner comprising a grain refiner compound selected from the group consisting of a polyphosphoric acid, a polyphosphate salt, and a combination thereof wherein said grain refiner compound is a compound having a formula M(n+2)PnO(3n+1) or (MPO3)n, where M represents a counter ion, and n=3 to 600; and (b) a source of deposition ions selected from the group consisting of Co ions and Ni ions. 2. The method of claim 1 wherein the grain refiner compound is ammonium polyphosphate. 3. The method of claim 1 wherein the grain refiner compound is sodium polyphosphate. 4. The method of claim 1 wherein the grain refiner compound is polyphosphoric acid. 5. The method of claim 1 wherein the grain refiner compound is present in the electroless deposition composition at a concentration between about 1 g/L and about 100 g/L. 6. The method of claim 1 wherein the grain refiner compound is present in the electroless deposition composition at a concentration between about 4 g/L and about 50 g/L. 7. The method of claim 1 wherein the electroless deposition composition further comprises a reducing agent. 8. The method of claim 1 wherein the electroless deposition composition further comprises an oxygen scavenger compound selected from the group consisting of ascorbic acid, SO32-, HSO3-, hydroquinone, catechol, resorcinol, hydrazine, and combinations thereof. 9. The method of claim 1 wherein the electroless deposition composition further comprises a stabilizer compound selected from the group consisting of an aminobenzoic acid, an hydroxybenzoic acid, a molybdenum oxide, a vanadium oxide, a rhenium oxide, salts thereof, derivatives thereof, and combinations thereof. 10. The method of claim 1 wherein the electroless deposition composition further comprises a leveler selected from the group consisting of diphenyl oxide disulfonic acids, triethanolamine salts of lauryl sulfate, ammonium laureth sulfates, alkylbenzene sulfonates, dodecylbenzene sulfonic acids, alkyldiphenyloxide disulfonate, low molecular weight polypropylene glycol, and combinations thereof. 11. The method of claim 1 wherein the substrate is a copper metal layer located in a semiconductor integrated circuit device. 12. The method of claim 1 wherein the electroless deposition composition further comprises an oxime-based stabilizer compound selected from the group consisting of salicylaldoxime, syn-2-pyridinealdoxime, dimethylglyoxime, 1,2-cyclohexanedione dioxime, diphenyl glyoxime, pyridyl diglyoxime, and combinations thereof. 13. An electroless plating solution for plating a metal capping layer onto a metal-filled interconnect in a microelectronic device, the solution comprising: a source of deposition ions selected from the group consisting of Co ions and Ni ions; a reducing agent; and a grain refiner compound selected from the group consisting of a polyphosphoric acid, a polyphosphate salt, and a combination thereof wherein said grain refiner compound is a compound having a formula M(n+2)PnO(3n+1) or (MPO3)n, where M represents a counter ion, and n=2 to 600. 14. The plating solution of claim 13 wherein the grain refiner compound is ammonium polyphosphate. 15. The plating solution of claim 13 wherein the grain refiner compound is sodium polyphosphate. 16. The plating solution of claim 13 wherein the grain refiner compound is polyphosphoric acid. 17. The plating solution of claim 13 wherein the grain refiner compound is present in the electroless deposition composition at a concentration between about 1 g/L and about 100 g/L. 18. The plating solution of claim 13 wherein the grain refiner compound is present in the electroless deposition composition at a concentration between about 4 g/L and about 50 g/L. 19. The plating solution of claim 13 wherein the electroless deposition composition further comprises an oxygen scavenger compound selected from the group consisting of ascorbic acid, SO32-, HSO3-, hydroquinone, catechol, resorcinol, hydrazine, and combinations thereof. 20. The plating solution of claim 13 wherein the electroless deposition composition further comprises a stabilizer compound selected from the group consisting of an aminobenzoic acid, an hydroxybenzoic acid, a molybdenum oxide, a vanadium oxide, rhenium oxide, salts thereof, derivatives thereof, and combinations thereof. 21. The plating solution of claim 13 wherein the electroless deposition composition further comprises a leveler selected from the group consisting of diphenyl oxide disulfonic acids, triethanolamine salts of lauryl sulfate, ammonium laureth sulfates, alkylbenzene sulfonates, dodecylbenzene sulfonic acids, alkyldiphenyloxide disulfonate, low molecular weight polypropylene glycol, and combinations thereof. 22. The electroless plating solution of claim 13 further comprising an oxime-based stabilizer compound selected from the group consisting of salicylaldoxime, syn-2-pyridinealdoxime, dimethylglyoxime, 1,2-cyclohexanedione dioxime, diphenyl glyoxime, pyridyl diglyoxime, and combinations thereof.
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이 특허에 인용된 특허 (11)
Kolics, Artur; Petrov, Nicolai; Ting, Chiu; Ivanov, Igor, Activation-free electroless solution for deposition of cobalt and method for deposition of cobalt capping/passivation layer on copper.
Bishop Craig V. (Lakewood OH) Loar Gary W. (Parma OH) Thomay Marlinda J. (Parma OH), Method of controlling orthophosphite ion concentration in hyphophosphite-based electroless plating baths.
Dubin Valery M. (Cupertino CA) Schacham-Diamand Yosi (Ithaca NY) Zhao Bin (Irvine CA) Vasudev Prahalad K. (Austin TX) Ting Chiu H. (Saratoga CA), Use of cobalt tungsten phosphide as a barrier material for copper metallization.
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