Lanthanum aluminum oxynitride dielectric films
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/31
H01L-021/02
출원번호
US-0216474
(2005-08-31)
등록번호
US-7410910
(2008-08-12)
발명자
/ 주소
Ahn,Kie Y.
Forbes,Leonard
출원인 / 주소
Micron Technology, Inc.
대리인 / 주소
Schwegman, Lundberg & Woessner, P.A.
인용정보
피인용 횟수 :
54인용 특허 :
272
초록▼
Electronic apparatus and methods of forming the electronic apparatus include a lanthanum aluminum oxynitride film on a substrate for use in a variety of electronic systems. The lanthanum aluminum oxynitride film may be structured as one or more monolayers. The lanthanum aluminum oxynitride film may
Electronic apparatus and methods of forming the electronic apparatus include a lanthanum aluminum oxynitride film on a substrate for use in a variety of electronic systems. The lanthanum aluminum oxynitride film may be structured as one or more monolayers. The lanthanum aluminum oxynitride film may be formed by atomic layer deposition.
대표청구항▼
What is claimed is: 1. A method comprising: forming a lanthanum aluminum oxynitride film in an integrated circuit on a substrate including forming the lanthanum aluminum oxynitride film by atomic layer deposition, the atomic layer deposition having one or more cycles, each cycle including: performi
What is claimed is: 1. A method comprising: forming a lanthanum aluminum oxynitride film in an integrated circuit on a substrate including forming the lanthanum aluminum oxynitride film by atomic layer deposition, the atomic layer deposition having one or more cycles, each cycle including: performing one or more lanthanum/oxygen sequences; performing one or more aluminum/oxygen sequences; and performing one or more nitrogen/oxygen sequences using a nitrogen precursor and an oxygen reactant precursor to the nitrogen precursor in the nitrogen/oxygen sequences. 2. The method of claim 1, wherein forming the lanthanum aluminum oxynitride film by atomic layer deposition includes forming the lanthanum aluminum oxynitride film as multiple layers of lanthanum aluminum oxynitride, each layer formed by atomic layer deposition, in which at least one layer has a nitrogen content different from the other layers of the lanthanum aluminum oxynitride film. 3. The method of claim 1, wherein forming the lanthanum aluminum oxynitride film includes forming LaAlO3(1-y/2)Ny, where 0.23 precursor in the atomic layer deposition. 5. The method of claim 1, wherein forming the lanthanum aluminum oxynitride film by atomic layer deposition includes using a trisethylcyclopentadionatolanthanum precursor in the atomic layer deposition. 6. The method of claim 1, wherein forming the lanthanum aluminum oxynitride film by atomic layer deposition includes using a trisdipyvaloylmethanatolanthanum precursor in the atomic layer deposition. 7. The method of claim 1, wherein forming the lanthanum aluminum oxynitride film by atomic layer deposition includes using tris (2,2,6,6-tetramethyl-3,5-heptanedionato)lanthanum (III) tetraglyme adduct as a precursor in the atomic layer deposition. 8. The method of claim 1, wherein forming the lanthanum aluminum oxynitride film by atomic layer deposition includes using an adduct of alane and dimethylethylamine as a precursor in the atomic layer deposition. 9. The method of claim 1, wherein forming the lanthanum aluminum oxynitride film by atomic layer deposition includes using a trimethylaluminum precursor in the atomic layer deposition. 10. The method of claim 1, wherein forming the lanthanum aluminum oxynitride film by atomic layer deposition includes forming the lanthanum aluminum oxynitride film using plasma-assisted atomic layer deposition. 11. The method of claim 1, wherein forming the lanthanum aluminum oxynitride film by atomic layer deposition includes using a nitrogen-containing precursor in the atomic layer deposition. 12. The method of claim 1, wherein forming the lanthanum aluminum oxynitride film by atomic layer deposition includes using an ammonia precursor in the atomic layer deposition. 13. The method of claim 1, wherein the method includes forming a transistor having a gate dielectric containing the lanthanum aluminum oxynitride film. 14. The method of claim 1, wherein the method includes forming a capacitor having a capacitor dielectric containing the lanthanum aluminum oxynitride film. 15. The method of claim 1, wherein the method includes forming a memory device containing the lanthanum aluminum oxynitride film. 16. The method of claim 1, wherein the method includes forming a conductive path to a conductive layer on and contacting the lanthanum aluminum oxynitride film to provide a signal to the conductive layer to operate in an electronic system. 17. A method comprising: forming a lanthanum aluminum oxynitride film in an integrated circuit on a substrate including forming the lanthanum aluminum oxynitride film by atomic layer deposition using a tert-butylamine precursor in the atomic layer deposition. 18. A method comprising: forming a lanthanum aluminum oxynitride film in an integrated circuit on a substrate including forming the lanthanum aluminum oxynitride film by atomic layer deposition using an allylamine precursor in the atomic layer deposition. 19. A method comprising: forming a lanthanum aluminum oxynitride film in an integrated circuit on a substrate including forming the lanthanum aluminum oxynitride film by atomic layer deposition using a 1,1-dimethylhydrazine precursor in the atomic layer deposition. 20. A method comprising: forming a first electrode on a substrate; forming a dielectric layer containing a lanthanum aluminum oxynitride film, including forming the lanthanum aluminum oxynitride film by atomic layer deposition, the atomic layer deposition having one or more cycles, each cycle including: performing one or more lanthanum/oxygen sequences; performing one or more aluminum/oxygen sequences; and performing one or more nitrogen/oxygen sequences using a nitrogen precursor and an oxygen reactant precursor to the nitrogen precursor in the nitrogen/oxygen sequences, the dielectric layer disposed on and contacting the first electrode; and forming a second electrode on and contacting the dielectric layer. 21. The method of claim 20, wherein forming the lanthanum aluminum oxynitride film by atomic layer deposition includes using a La(thd)3 precursor, a DMEAA precursor, and nitrogen in the atomic layer deposition. 22. The method of claim 20, wherein the method includes forming the first electrode, the dielectric layer, and the second electrode as a capacitor in a dynamic random access memory. 23. The method of claim 20, wherein the method includes forming the first electrode, the dielectric layer, and the second electrode as a capacitor in an analog integrated circuit. 24. The method of claim 20, wherein the method includes forming the first electrode, the dielectric layer, and the second electrode as a capacitor in a radio frequency integrated circuit. 25. The method of claim 20, wherein the method includes forming the first electrode, the dielectric layer, and the second electrode as a capacitor in a mixed signal integrated circuit. 26. The method of claim 20, wherein forming a dielectric layer includes forming the dielectric layer having multiple layers of dielectrics within which the lanthanum aluminum oxynitride film is disposed. 27. The method of claim 20, wherein forming the dielectric layer having multiple layers of dielectrics includes forming a nanolaminate. 28. The method of claim 20, wherein forming the lanthanum aluminum oxynitride film by atomic layer deposition includes forming the lanthanum aluminum oxynitride film as multiple layers of lanthanum aluminum oxynitride, each layer formed by atomic layer deposition, in which at least one layer of the multiple layers has a nitrogen content different from the other layers of the lanthanum aluminum oxynitride film. 29. The method of claim 20, wherein forming the lanthanum aluminum oxynitride film includes forming LaAlO3(1-y/2)Ny, where 0.23 precursor, a trimethylaluminum precursor, and nitrogen in the atomic layer deposition. 32. The method of claim 30, wherein the method includes forming the dielectric layer as a gate insulator in a transistor of a CMOS device. 33. The method of claim 30, wherein forming a dielectric layer includes forming the dielectric layer as a gate dielectric contacting the channel. 34. The method of claim 30, wherein forming a dielectric layer includes forming the dielectric layer as a tunnel gate insulator contacting the channel. 35. The method of claim 30, wherein forming a dielectric layer includes forming the dielectric layer on and contacting a floating gate. 36. The method of claim 30, wherein the method includes forming the dielectric layer as a tunnel insulator contacting the channel and forming a floating gate dielectric on and contacting a floating gate, the floating gate dielectric containing a lanthanum aluminum oxynitride film. 37. The method of claim 30, wherein forming the lanthanum aluminum oxynitride film by atomic layer deposition includes forming the lanthanum aluminum oxynitride film as multiple layers of lanthanum aluminum oxynitride, each layer formed by atomic layer deposition, in which at least one layer of the multiple layers has a nitrogen content different from the other layers of the lanthanum aluminum oxynitride film. 38. The method of claim 30, wherein forming the lanthanum aluminum oxynitride film includes forming LaAlO3(1-y/2)Ny, where 0.23 precursor, a trimethylaluminum precursor, and a nitrogen-containing precursor in the atomic layer deposition. 41. The method of claim 39, wherein the method includes forming the dielectric layer as a gate insulator of a transistor in a memory device. 42. The method of claim 39, wherein the method includes forming the dielectric layer as a tunnel gate insulator in a flash memory. 43. The method of claim 39, wherein the method includes forming the dielectric layer as an inter-gate insulator in a flash memory. 44. The method of claim 39, wherein the method includes forming the dielectric layer as a dielectric of a capacitor in a memory cell. 45. The method of claim 39, wherein the method includes forming a dynamic random access memory. 46. The method of claim 39, wherein the method includes forming the dielectric layer as a nanolaminate dielectric. 47. The method of claim 39, wherein the method includes forming the dielectric layer as a nanolaminate dielectric in a NROM flash memory. 48. The method of claim 39, wherein forming the lanthanum aluminum oxynitride film by atomic layer deposition includes forming the lanthanum aluminum oxynitride film as multiple layers of lanthanum aluminum oxynitride, each layer formed by atomic layer deposition, in which at least one layer of the multiple layers has a nitrogen content different from the other layers of the lanthanum aluminum oxynitride film. 49. The method of claim 39, wherein forming the lanthanum aluminum oxynitride film includes forming LaAlO3(1-y/2)Ny, where 0.23 precursor, an Al(CH3)3 precursor, and nitrogen in the atomic layer deposition. 52. The method of claim 50, wherein forming the lanthanum aluminum oxynitride film by atomic layer deposition includes forming the lanthanum aluminum oxynitride film as multiple layers of lanthanum aluminum oxynitride, each layer formed by atomic layer deposition, in which at least one layer of the multiple layers has a nitrogen content different from the other layers of the lanthanum aluminum oxynitride film. 53. The method of claim 50, wherein forming the lanthanum aluminum oxynitride film includes forming LaAlO3(1-y/2)Ny, where 0.2
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (272)
Noble, Wendell P.; Forbes, Leonard; Ahn, Kie Y., 4 F2 folded bit line DRAM cell structure having buried bit and word lines.
Akram, Salman; Ahn, Kie Y.; Forbes, Leonard, Atomic layer deposition (ALD) high permeability layered magnetic films to reduce noise in high speed interconnection.
Ibok, Effiong; Zheng, Wei; Tripsas, Nicholas H.; Ramsbey, Mark T.; Cheung, Fred T K, Bi-layer floating gate for improved work function between floating gate and a high-K dielectric layer.
Forbes Leonard ; Geusic Joseph E. ; Ahn Kie Y., Circuits with a trench capacitor having micro-roughened semiconductor surfaces and methods for forming the same.
Czubatyj Wolodymyr ; Ovshinsky Stanford R. ; Strand David A. ; Klersy Patrick ; Kostylev Sergey ; Pashmakov Boil, Composite memory material comprising a mixture of phase-change memory material and dielectric material.
Lee Woo-Hyeong ; Manchanda Lalita, Electronic components with doped metal oxide dielectric materials and a process for making electronic components with do.
Colombo, Luigi; Quevedo-Lopez, Manuel; Chambers, James J.; Visokay, Mark R.; Rotondaro, Antonio L. P., High-k gate dielectric with uniform nitrogen profile and methods for making the same.
Geusic Joseph E. ; Ahn Kie Y. ; Forbes Leonard, Integrated circuits using high aspect ratio vias through a semiconductor wafer and method for forming same.
Geusic Joseph E. ; Ahn Kie Y. ; Forbes Leonard, Integrated circuits using optical fiber interconnects formed through a semiconductor wafer and methods for forming same.
Geusic, Joseph E.; Ahn, Kie Y.; Forbes, Leonard, Integrated circuits using optical fiber interconnects formed through a semiconductor wafer and methods for forming same.
Geusic Joseph E. ; Ahn Kie Y. ; Forbes Leonard, Integrated circuits using optical waveguide interconnects formed through a semiconductor wafer and methods for forming same.
Geusic, Joseph E.; Ahn, Kie Y.; Forbes, Leonard, Integrated circuits using optical waveguide interconnects formed through a semiconductor wafer and methods for forming same.
Utsunomiya Hajime (Nagano JPX) Uchiyama Kenji (Nagano JPX) Kosuda Masanori (Nagano JPX) Inoue Hiroyasu (Nagano JPX), Magneto-optical disc with intermediate film layer between a recording film and a dielectric film.
Ovshinsky Standford R. ; Czubatyj Wolodymyr ; Strand David A. ; Klersy Patrick J. ; Kostylev Sergey ; Pashmakov Boil, Memory element with memory material comprising phase-change material and dielectric material.
Chang, Jane; Lin, You-Sheng; Kepten, Avishai; Sendler, Michael; Levy, Sagy; Bloom, Robin, Method for depositing a coating having a relatively high dielectric constant onto a substrate.
Rotondaro, Antonio L. P.; Visokay, Mark Robert; Chambers, James J.; Colombo, Luigi, Method for fabricating split gate transistor device having high-k dielectrics.
Kim Ki Bum,KRX ; Yoon Tae Sik,KRX ; Kwon Jang Yeon,KRX, Method for forming quantum dot in semiconductor device and a semiconductor device resulting therefrom.
Alain E. Kaloyeros ; Ana Londergan ; Barry Arkles, Method of interlayer mediated epitaxy of cobalt silicide from low temperature chemical vapor deposition of cobalt.
Alessandro Cesare Callegari ; Fuad Elias Doany ; Evgeni Petrovich Gousev ; Theodore Harold Zabel, Methods for forming metal oxide layers with enhanced purity.
Shingai, Hiroshi; Hirata, Hideki, Optical recording medium containing a substrate, an intermediate layer having therein an amorphous material, the intermediate layer having a reflective layer thereon.
Hosoda, Yasuo; Mitsumori, Ayumi; Sato, Megumi; Yamaguchi, Masataka; Iida, Tetsuya; Inoue, Hiroyasu; Mishima, Koji; Aoshima, Masaki, Optical recording medium, method for manufacturing the same and target used for sputtering process.
Hosoda,Yasuo; Mitsumori,Ayumi; Sato,Megumi; Yamaguchi,Masataka; Iida,Tetsuya; Inoue,Hiroyasu; Mishima,Koji; Aoshima,Masaki, Optical recording medium, method for manufacturing the same and target used for sputtering process.
Lee,Chun Soo; Oh,Min Sub; Park,Hyung Sang, Plasma enhanced atomic layer deposition (PEALD) equipment and method of forming a conducting thin film using the same thereof.
Cain John L. (Schertz TX) Relue Michael P. (San Antonio TX) Costabile Michael E. (San Antonio TX) Marsh William P. (San Antonio TX), Plasma processing apparatus.
Bruley, John; Cabral, Jr., Cyril; Lavoie, Christian; Wagner, Tina J.; Wang, Yun Yu; Wildman, Horati S.; Hon, Wong Kwong, Pre-anneal of CoSi, to prevent formation of amorphous layer between Ti-O-N and CoSi.
Chambers,James Joseph; Visokay,Mark Robert; Colombo,Luigi, Semiconductor CMOS devices and methods with NMOS high-k dielectric present in core region that mitigate damage to dielectric materials.
Jamal Ramdani ; Ravindranath Droopad ; Lyndee L. Hilt ; Kurt William Eisenbeiser, Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same.
Quevedo Lopez,Manuel A.; Chambers,James J.; Colombo,Luigi; Visokay,Mark R., Top surface roughness reduction of high-k dielectric materials using plasma based processes.
Oh, Pyeong Won; Kim, Woo Jin; Oh, Hoon Jung; Yoon, Hyo Gun; Yoon, Hyo Seob; Choi, Baik II, Capacitor for a semiconductor device and manufacturing method thereof.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.