Multilayer getter structures and methods for making same
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01K-001/56
H01K-001/00
H01J-017/24
H01J-017/02
H01J-061/26
H01J-061/24
출원번호
US-0866345
(2004-06-10)
등록번호
US-7413814
(2008-08-19)
우선권정보
IT-MI2003A1178(2003-06-11)
발명자
/ 주소
Conte,Andrea
Moraja,Marco
출원인 / 주소
SAES Getters S.p.A.
대리인 / 주소
TIPS Group
인용정보
피인용 횟수 :
6인용 특허 :
18
초록▼
Getter multilayer structures are disclosed, embodiments of which include at least a layer of a non-evaporable getter alloy having a low activation temperature over a layer of a different non-evaporable getter material having high specific surface area, both preferably obtained by cathodic deposition
Getter multilayer structures are disclosed, embodiments of which include at least a layer of a non-evaporable getter alloy having a low activation temperature over a layer of a different non-evaporable getter material having high specific surface area, both preferably obtained by cathodic deposition. The multilayer NEG structures exhibit better gas sorbing characteristics and lower activation temperature lower than those of deposits made up of a single material. A process for manufacturing such structures includes depositing a first, high surface area NEG film on a support, and then depositing a thin over layer of low activation NEG film.
대표청구항▼
The invention claimed is: 1. A multilayer non-evaporable getter structure comprising a first layer of a non-evaporable getter material having a surface area equivalent to at least 20 times its geometrical area, and directly contacting said first layer, a second layer, having a thickness not greater
The invention claimed is: 1. A multilayer non-evaporable getter structure comprising a first layer of a non-evaporable getter material having a surface area equivalent to at least 20 times its geometrical area, and directly contacting said first layer, a second layer, having a thickness not greater than 1 μm, of a non-evaporable getter alloy having a low activation temperature. 2. The structure of claim 1, wherein said second layer fully covers said first layer. 3. The structure of claim 1, wherein the getter material of said first layer is selected from the group consisting of zirconium, titanium, niobium, tantalum, vanadium, hafnium, and Zr--Co-A alloys, wherein A represents one or more elements selected from yttrium, lanthanum, and the other rare earth elements. 4. The structure of claim 1, wherein the thickness of said first layer is between about 0.2 and 50 μm. 5. The structure of claim 4, wherein said thickness of said first layer is between about 10 and 20 μm. 6. The structure of claim 1, wherein the surface area of said first layer is equivalent to at least about 50 times its geometrical area. 7. The structure of claim 1, wherein the getter alloy of said second layer comprises Zr and V. 8. The structure of claim 7, wherein said getter alloy further comprises smaller quantities of one or more elements selected from Fe, Ni, Mn, and Al. 9. The structure of claim 8, wherein said getter alloy has a composition by weight of about Zr 70%-V 24.6%-Fe 5.4%. 10. The structure of claim 1, wherein the getter alloy of said second layer has the composition of about 80%:15%:5% ZrCo:A by weight, wherein A represents one or more elements selected from yttrium, lanthanum, and the other rare earth elements, and the material of said first layer is different from that of said second layer. 11. The structure of claim 10, wherein said first layer is not a Zr:Co:A alloy. 12. The structure of claim 7, wherein the getter alloy of said second layer is a Zr--Ti--V alloy. 13. The structure of claim 12, wherein, the getter alloy of said second layer has the composition of about Zr 44%-Ti 23%-V 33%. 14. The structure of claim 7, wherein the getter alloy of said second layer is ZrV2. 15. The structure of claim 1, wherein the thickness of said second layer is between about 50 and about 500 nm. 16. The structure of claim 1, further comprising a continuous or discontinuous layer of palladium or a compound thereof, deposited on the surface of said second layer opposed to the surface in contact with said first layer. 17. The structure of claim 16, wherein said palladium compound is selected from palladium oxide, sliver-palladium alloys comprising up to about 30 atom % of silver, and compounds of palladium with one or more metals forming the getter material of the second layer. 18. The structure of claim 16, wherein said layer of palladium or a compound thereof is discontinuous and covers from about 10 to about 90% of the second layer surface. 19. The structure of claim 16, wherein said layer of palladium or a compound thereof has a thickness between about 10 and about 100 nm. 20. A getter structure comprising: a support; a first layer of a first non-evaporable getter having a high surface area disposed over a surface of said support; and a second layer a second non-evaporable getter having a low activation temperature disposed over said first layer. 21. A getter structure as recited in claim 20 wherein said first layer and said second layer are cathodically deposited films.
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이 특허에 인용된 특허 (18)
Wallace Robert M. (Dallas TX) Gnade Bruce E. (Dallas TX) Shen Chi-Cheong (Richardson TX) Levine Jules D. (Dallas TX) Taylor Robert H. (Richardson TX), Anode plate for flat panel display having integrated getter.
Conte, Andrea; Mazza, Francesco; Moraja, Marco, Easily loaded and unloaded getter device for reducing evacuation time and contamination in a vacuum chamber and method for use of same.
Arai, Yutaka; Hasegawa, Mitsutoshi; Shigeoka, Kazuya, Getter, air tight chamber and image forming apparatus having getter, and manufacturing method of getter.
Nader Najafi ; Sonbol Massoud-Ansari ; Srinivas Tadigadapa ; Yafan Zhang, Methods for prevention, reduction, and elimination of outgassing and trapped gases in micromachined devices.
Boffito Claudio (Milan ITX) Barosi Aldo (Milan ITX) Figini Alessandro (Milan ITX), Non-evaporable ternary gettering alloy and method of use for the sorption of water, water vapor and other gases.
Corazza, Alessio; Gallitognotta, Alessandro; Massaro, Vincenzo, Non-evaporable getter compositions which can be reactivated at low temperature after exposure to reactive gases at a higher temperature.
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