초록 ▼

A solid-state laser crystal constituting a laser-diode-excited solid-state laser apparatus or an optical fiber constituting a fiber laser apparatus or fiber laser amplifier is doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ so that a laser beam is emitted from the solid-state laser crystal

A solid-state laser crystal constituting a laser-diode-excited solid-state laser apparatus or an optical fiber constituting a fiber laser apparatus or fiber laser amplifier is doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ so that a laser beam is emitted from the solid-state laser crystal or the optical fiber, or incident light of the fiber laser amplifier is amplified, by one of the transitions from 5S2 to 5I7, from 5S2 to 5I8, from 4G5/2 to 6H5/2, from 4G5/2 to 6H7/2, from 4F3/2 to 6H11/2, from 5D0 to 7F2, from 4F9/2 to 6H13/2, from 4F9/2 to 6H11/2, from 4S3/2 to 4I15/2, from 2H9/2 to 4I13/2, and from 5D4 to 7F5. The above solid-state laser crystal or optical fiber is excited with a GaN-based compound laser diode.

대표청구항 ▼

What is claimed is: 1. A laser-diode-excited solid-state laser apparatus comprising: a GaN-based compound laser diode which emits an excitation laser beam; and a solid-state laser crystal which is doped with Tb3+, and emits a solid-state laser beam generated by a transition from 5D4 to 7F5 when the

What is claimed is: 1. A laser-diode-excited solid-state laser apparatus comprising: a GaN-based compound laser diode which emits an excitation laser beam; and a solid-state laser crystal which is doped with Tb3+, and emits a solid-state laser beam generated by a transition from 5D4 to 7F5 when the solid-state laser crystal is excited with said excitation laser beam, wherein the solid-state laser crystal is a bulk structure YAG solid-state crystal; the solid-state laser crystal includes a first coating disposed on a backward end surface of the solid-state crystal and a second coating disposed on a forward end surface of the solid-state laser crystal, which enable the solid-state crystal to emit the solid-state laser beam generated by the transition from 5D4 to 7F5 and said solid-state laser crystal is doped with no rare-earth ion other than Tb3+. 2. A laser-diode-excited solid-state laser apparatus according to claim 1, wherein said solid-state laser beam is in a wavelength range of 530 to 550 nm. 3. A laser-diode-excited solid-state laser apparatus according to claim 1, wherein said GaN-based compound laser diode has an active layer made of one of InGaN, InGaNAs, and GaNAs materials. 4. A fiber laser apparatus comprising: a GaN-based compound laser diode which emits a first laser beam; and an optical fiber which has a core doped with Tb3+, and emits a second laser beam generated by a transition from 5D4 to 7F5 when the optical fiber is excited with said first laser beams, wherein the optical fiber includes a first coating disposed on a light entrance end surface of the optical fiber and a second coating disposed on a light exit end surface of the optical fiber, which enable the optical fiber to emit the second laser beam generated by the transition from 5D4 to 7F5 and said solid-state laser crystal is doped with no rare-earth ion other than Tb3+. 5. A fiber laser apparatus according to claim 4, wherein said second laser beam is in a wavelength range of 530 to 550 nm. 6. A fiber laser apparatus according to claim 4, wherein said GaN-based compound laser diode has an active layer made of one of InGaN, InGaNAs, and GaNAs materials. 7. A fiber laser amplifier comprising: a GaN-based compound laser diode which emits an excitation laser beam; and an optical fiber which has a core doped with Tb3+, and amplifies incident light which has a wavelength within a wavelength range of fluorescence generated by a transition from 5D4 to 7F5 when the optical fiber is excited with said excitation laser beam, wherein the optical fiber includes a first coating disposed on a light entrance end surface of the optical fiber and a second coating disposed on a light exit end surface of the optical fiber, which enable the optical fiber to amplify the incident light having the wavelength within the wavelength range of fluorescence generated by the transition from 5D0 to 7F2; and said solid-state laser crystal is doped with no rare-earth ion other than Tb3+. 8. A fiber laser amplifier according to claim 7, wherein said fluorescence is in a wavelength range of 530 to 550 nm. 9. A fiber laser amplifier according to claim 7, wherein said GaN-based compound laser diode has an active layer made of one of InGaN, InGaNAs, and GaNAs materials.