초록 ▼

Light emitting diodes include a substrate having first and second opposing faces and that is transparent to optical radiation in a predetermined wavelength range and that is patterned to define, in cross-section, a plurality of pedestals that extend into the substrate from the first face towards the

Light emitting diodes include a substrate having first and second opposing faces and that is transparent to optical radiation in a predetermined wavelength range and that is patterned to define, in cross-section, a plurality of pedestals that extend into the substrate from the first face towards the second face. A diode region on the second face is configured to emit light in the predetermined wavelength range, into the substrate upon application of voltage across the diode region. A mounting support on the diode region, opposite the substrate is configured to support the diode region, such that the light that is emitted from the diode region into the substrate, is emitted from the first face upon application of voltage across the diode region. A reflector is provided between the mounting support and the diode region, that is configured to reflect light that is emitted from the diode region back into the diode region, through the substrate that is transparent to optical radiation in the predetermined wavelength range and from the plurality of pedestals, upon application of voltage across the diode region. A layer of Indium Tin Oxide (ITO) is provided between the reflector and the diode region.

대표청구항 ▼

What is claimed is: 1. A light emitting diode comprising: a substrate; a diode region on the substrate comprising a gallium nitride based n-type layer, an active region and a gallium nitride based p-type layer; a first transparent oxide layer on the gallium nitride based p-type layer; a second tran

What is claimed is: 1. A light emitting diode comprising: a substrate; a diode region on the substrate comprising a gallium nitride based n-type layer, an active region and a gallium nitride based p-type layer; a first transparent oxide layer on the gallium nitride based p-type layer; a second transparent oxide layer on the substrate remote from the diode region; a first reflector layer on the first transparent oxide layer remote from the gallium nitride-based p-type layer; and a second reflector layer on the second transparent oxide layer remote from the substrate. 2. A light emitting diode according to claim 1 wherein the first transparent oxide layer and the second transparent oxide layer both comprise Indium Tin Oxide (ITO). 3. A light emitting diode according to claim 2 wherein the ITO is several microns or more thick. 4. A light emitting diode according to claim 1 further comprising: a barrier layer on the second reflector layer remote from the second transparent oxide layer; and a bonding layer on the barrier layer remote from the second reflector layer. 5. A light emitting diode according to claim 4 further comprising: a mounting substrate on the bonding layer remote from the barrier layer. 6. A light emitting diode according to claim 1 wherein the substrate comprises silicon carbide.