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특허 상세정보

Silica glass crucible with barium-doped inner wall

국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) C30C-035/00   
미국특허분류(USC) 117/200; 065/033.1; 065/DIG.8; 117/217
출원번호 US-0536517 (2006-09-28)
등록번호 US-7427327 (2008-09-23)
발명자 / 주소
출원인 / 주소
대리인 / 주소
    Marger Johnson & McCollom, PC
인용정보 피인용 횟수 : 3  인용 특허 : 16
초록

A silica glass crucible includes a thin barium-doped inner layer, a stable, bubble-free intermediate layer, and a stable opaque outer layer. The fusion process of the present invention controls the dynamic gas balance at the fusion front where formed grain is melted to dense fused silica. The crucible demonstrates reduced bubble growth during a Czochralski process. As a result of the thin barium-doped layer and the reduced bubble growth, the inner surface of the crucible is uniformly minimally textured during a CZ process. The present crucible is especia...

대표
청구항

The invention claimed is: 1. A method for making a fused silica crucible comprising: feeding bulk silica grain along an inner surface of a rotating mold to arrange the bulk silica grain in a crucible shape having a radially inner surface open to an interior space of the mold and a radially outer surface adjacent an inner wall of the mold; heating the bulk silica grain from the interior space of the mold; drawing air through the bulk silica grain and into ports distributed in the inner wall of the mold; evolving gas from the heated grain; establishing a ...

이 특허에 인용된 특허 (16)

  1. Phillips Richard Joseph ; Keltner Steven Jack ; Holder John Davis. Barium doping of molten silicon for use in crystal growing process. USP2001116319313.
  2. Richard Joseph Phillips ; Steven Jack Keltner ; John Davis Holder. Barium doping of molten silicon for use in crystal growing process. USP2002106461427.
  3. Holder Donald W. (Huntsville AL) Phillips William R. (Hazlegreen AL). Electronic image stabilization. USP1987014637571.
  4. Uchikawa Akira (Takefu JPX) Iwasaki Atsushi (Takefu JPX) Fukuoka Toshio (Sabae JPX) Matsumura Mitsuo (Takefu JPX) Matsui Hiroshi (Takefu JPX) Sato Yasuhiko (Annaka JPX) Aoyama Masaaki (Kouriyama JPX). Manufacture of a quartz glass vessel for the growth of single crystal semiconductor. USP1990094956208.
  5. Uchikawa Akira (Takefu JPX) Iwasaki Atsushi (Takefu JPX) Fukuoka Toshio (Sabae JPX) Matsumura Mitsuo (Takefu JPX) Matsui Hiroshi (Takefu JPX) Sato Yasuhiko (Annaka JPX) Aoyama Masaaki (Kouriyama JPX). Manufacture of a quartz glass vessel for the growth of single crystal semiconductor. USP1990064935046.
  6. Brning Rolf (Bruchkbel DEX) Habegger Friedhelm (Hammersbach DEX). Method of making quartz glass crucibles, and apparatus carrying out the method. USP1983114416680.
  7. Brown David R. (Beverly MA) Frost ; Jr. Charles E. (Exeter NH) White Kenneth A. (Raymond NH). Method of manufacturing quartz glass crucibles with low bubble content. USP1986124632686.
  8. Hansen Richard L. ; Drafall Larry E. ; McCutchan Robert M. ; Holder John D. ; Allen Leon A. ; Shelley Robert D.. Methods for improving zero dislocation yield of single crystals. USP1999115980629.
  9. Kemmochi, Katsuhiko; Togawa, Takayuki; Mosier, Robert; Spencer, Paul. Methods for making silica crucibles. USP2003016510707.
  10. Sato Tatsuhiro,JPX ; Mizuno Shigeo,JPX ; Matsumura Mitsuo,JPX ; Watanabe Hiroyuki,JPX. Quart crucible with large diameter for pulling single crystal and method of producing the same. USP2000106136092.
  11. Sato Tatsuhiro,JPX ; Mizuno Shigeo,JPX ; Matsumura Mitsuo,JPX ; Watanabe Hiroyuki,JPX. Quartz crucible with large diameter for pulling single crystal and method of producing the same. USP1999115989021.
  12. Watanabe Hiroyuki,JPX ; Sato Tatsuhiro,JPX. Quartz glass crucible for pulling single crystal. USP1999035885071.
  13. Sato, Tatsuhiro; Mizuno, Shigeo; Ohama, Yasuo. Quartz glass crucible for pulling up silicon single crystal and production method therefor. USP2004096797061.
  14. Kemmochi, Katsuhiko; Mosier, Robert; Spencer, Paul. Silica crucible with inner layer crystallizer and method. USP2003116641663.
  15. Richard Joseph Phillips ; Steven Jack Keltner ; John Davis Holder. Strontium doping of molten silicon for use in crystal growing process. USP2002026350312.
  16. Hansen Richard L. ; Drafall Larry E. ; McCutchan Robert M. ; Holder John D. ; Allen Leon A. ; Shelley Robert D.. Surface-treated crucibles for improved zero dislocation performance. USP1999115976247.