초록 ▼

Reactors having gas distributors for depositing materials onto micro-device workpieces, systems that include such reactors, and methods for depositing materials onto micro-device workpieces. In one embodiment, a reactor for depositing materials onto a micro-device workpiece includes a reaction chamb

Reactors having gas distributors for depositing materials onto micro-device workpieces, systems that include such reactors, and methods for depositing materials onto micro-device workpieces. In one embodiment, a reactor for depositing materials onto a micro-device workpiece includes a reaction chamber, a passageway, and a door assembly. The reaction chamber includes a gas distributor configured to provide a flow of gas(es) to a micro-device workpiece on a workpiece holder. The passageway, which has a first end open to the reaction chamber and a second end apart from the reaction chamber, is configured to provide ingression to and egression from the chamber for processing the micro-device workpiece. The door assembly is configured to open and sealably close a door at the second end of the passageway. A gas conditioning system positioned in the door is configured to maintain a desired concentration and phase of gas constituents in the passageway.

대표청구항 ▼

We claim: 1. A method of fabricating a layer on a micro-device workpiece, comprising: inserting a workpiece through a passageway and into a reaction chamber, wherein the passageway includes a duct having a first end open to the chamber and a second end apart from the chamber, and wherein the first

We claim: 1. A method of fabricating a layer on a micro-device workpiece, comprising: inserting a workpiece through a passageway and into a reaction chamber, wherein the passageway includes a duct having a first end open to the chamber and a second end apart from the chamber, and wherein the first end remains open to the chamber while processing the workpiece; reacting a first precursor gas and a second precursor gas in the reaction chamber to form a layer of material on a workpiece; and inhibiting an undesirable concentration and/or phase of the first precursor and/or the second precursor from being in the passageway with a gas conditioning system carried by a door assembly at a second end of the passageway, the gas conditioning system including at least one of (a) a flow port through which a secondary gas flows directly into the passageway, and (b) a heating element. 2. The method of claim 1, further comprising: flowing the first precursor gas through the reaction chamber to deposit the first precursor onto the micro-device workpiece; flowing a first purge gas through the reaction chamber to purge excess amounts of the first precursor; flowing the second precursor gas through the reaction chamber to deposit the second precursor onto the micro-device workpiece; flowing the purge gas through the reaction chamber to purge excess amounts of the second precursor; and providing a flow of a secondary gas through the passageway during at least one of the flowing procedures. 3. The method of claim 1, further comprising mixing the first precursor gas and the second precursor gas in a mixing zone exposed to and over the micro-device workpiece. 4. The method of claim 1 wherein the reacting step is repeated until a layer having the desired thickness is formed on the workpiece. 5. The method of claim 1 wherein inhibiting an undesirable concentration of precursor gases in the passageway comprises heating the passageway using the heating element carried by the door assembly. 6. The method of claim 1 wherein inhibiting an undesirable concentration of precursor gases in the passageway comprises flowing a secondary gas through the flow port carried by the door assembly and through the passageway toward the chamber. 7. A method of fabricating a layer on a micro-device workpiece, comprising: inserting a workpiece through a passageway and into a reaction chamber, wherein the passageway includes a duct having a first end open to the chamber and a second end apart from the chamber, and wherein the first end remains open to the chamber while processing the workpiece; reacting a first precursor gas and a second precursor gas in the reaction chamber to form a layer of material on a workpiece; and heating the passageway with a heating element carried by a door at the second end of the passageway to inhibit an undesirable concentration and/or phase of the first precursor and/or the second precursor from being in the passageway. 8. The method of claim 7 wherein heating the passageway occurs before reacting the first and second precursor gases in the reaction chamber. 9. The method of claim 7 wherein heating the passageway occurs simultaneously with reacting the first and second precursor gases in the reaction chamber. 10. The method of claim 7 wherein heating the passageway comprises using at least one of an electrical heater element, heated fluid loop, Peltier cell, and superheated inert gas. 11. The method of claim 7 wherein the door is movable between a first position and a second position, the door being configured to seal the second end of the passageway in the second position, and wherein: heating the passageway with a heating element carried by the door comprises heating the passageway with the heating element when the door is in the second position. 12. A method of fabricating a layer on a micro-device workpiece, comprising: inserting a workpiece through a passageway and into a reaction chamber, wherein the passageway includes a duct having a first end open to the chamber and a second end apart from the chamber, and wherein the first end remains open to the chamber while processing the workpiece; reacting a first precursor gas and a second precursor gas in the reaction chamber to form a layer of material on a workpiece; and flowing a secondary gas directly into the passageway through a flow port at a second end of the passageway to inhibit an undesirable concentration and/or phase of the first precursor and/or the second precursor from being in the passageway. 13. The method of claim 12 wherein flowing a secondary gas occurs before reacting the first and second precursor gases in the reaction chamber. 14. The method of claim 12 wherein flowing a secondary gas occurs simultaneously with reacting the first and second precursor gases in the reaction chamber. 15. The method of claim 12 wherein flowing a secondary gas comprises passing the secondary gas through flow ports in a door assembly at the second end of the passageway and directly into the passageway, wherein the door assembly is configured to seal the second end of the passageway. 16. The method of claim 12 wherein flowing a secondary gas comprises passing the secondary gas through flow ports in the passageway, and wherein the secondary gas flows through the duct toward the reaction chamber. 17. The method of claim 12 wherein the secondary gas is heated before being flowed through the passageway. 18. A method of fabricating a layer on a micro-device workpiece, comprising: inserting a workpiece through a passageway and into a reaction chamber, wherein the passageway includes a duct having a first end open to the chamber and a second end apart from the chamber, and wherein the first end remains open to the chamber while processing the workpiece; reacting a first precursor gas and a second precursor gas in the reaction chamber to form a layer of material on a workpiece; heating the passageway with a heating element proximate to the second end of the passageway; and flowing a secondary gas into the passageway through a flow port proximate to the second end of the passageway to inhibit an undesirable concentration and/or phase of the first precursor and/or the second precursor from being in the passageway. 19. The method of claim 18, further comprising: flowing the first precursor gas through the reaction chamber to deposit the first precursor onto the micro-device workpiece; flowing a first purge gas through the reaction chamber to purge excess amounts of the first precursor; flowing the second precursor gas through the reaction chamber to deposit the second precursor onto the micro-device workpiece; and flowing a second purge gas through the reaction chamber to purge excess amounts of the second precursor. 20. The method of claim 18, further comprising mixing the first precursor gas and the second precursor gas in a mixing zone exposed to and over the micro-device workpiece. 21. The method of claim 18 wherein heating the passageway occurs after flowing the secondary gas through the passageway. 22. The method of claim 18 wherein heating the passageway occurs simultaneously with flowing the secondary gas through the passageway. 23. A method of fabricating a layer on a micro-device workpiece, comprising: inserting a workpiece through a passageway and into a reaction chamber, wherein the passageway includes a duct having a first end open to the chamber and a second end apart from the chamber, and wherein the first end remains open to the chamber while processing the workpiece; reacting a first precursor gas and a second precursor gas in the reaction chamber to form a layer of material on a workpiece; and flowing a heated secondary gas directly into the passageway through a flow port proximate to the second end of the passageway to inhibit an undesirable concentration and/or phase of the first precursor and/or the second precursor from being in the passageway.