In one embodiment, a method for forming a tungsten barrier material on a substrate is provided which includes depositing a tungsten layer on a substrate during a vapor deposition process and exposing the substrate sequentially to a tungsten precursor and a nitrogen precursor to form a tungsten nitri
In one embodiment, a method for forming a tungsten barrier material on a substrate is provided which includes depositing a tungsten layer on a substrate during a vapor deposition process and exposing the substrate sequentially to a tungsten precursor and a nitrogen precursor to form a tungsten nitride layer on the tungsten layer. Some examples provide that the tungsten layer may be deposited by sequentially exposing the substrate to the tungsten precursor and a reducing gas (e.g., diborane or silane) during an atomic layer deposition process. The tungsten layer may have a thickness of about 50 Å or less and tungsten nitride layer may have an electrical resistivity of about 380 μΩ-cm or less. Other examples provide that a tungsten bulk layer may be deposited on the tungsten nitride layer by a chemical vapor deposition process.
대표청구항▼
The invention claimed is: 1. A The method for forming a tungsten barrier material on a substrate, comprising: exposing a substrate to a tungsten precursor to form a tungsten layer thereon, wherein the tungsten precursor is selected from the group consisting of tungsten hexafluoride, tungsten carbon
The invention claimed is: 1. A The method for forming a tungsten barrier material on a substrate, comprising: exposing a substrate to a tungsten precursor to form a tungsten layer thereon, wherein the tungsten precursor is selected from the group consisting of tungsten hexafluoride, tungsten carbonyl, and derivatives thereof; repeatedly exposing the substrate seguentially to the tungsten precursor and a nitrogen precursor to form a tungsten nitride layer on the tungsten layer, wherein the nitrogen precursor is selected from the group consisting of nitrogen gas, ammonia, hydrazine, monomethyl hydrazine, dimethyl hydrazine, t-butyl hydrazine, phenyl hydrazine, 2,2'-azotertbutane, ethylazide, derivatives thereof, and combinations thereof; and depositing a tungsten bulk layer over the tungsten nitride layer by a chemical vapor deposition process. 2. A method for forming a tungsten barrier material on a substrate, comprising: depositing a tungsten layer on a substrate during a vapor deposition process; and repeatedly exposing the substrate seguentially to a tungsten precursor and a nitrogen precursor to form a tungsten nitride layer on the tungsten layer, wherein the nitrogen precursor is selected from the group consisting of nitrogen gas, ammonia, hydrazine, monomethyl hydrazine, dimethyl hydrazine, t-butyl hydrazine, phenyl hydrazine, 2,2'-azotertbutane, ethylazide, derivatives thereof, and combinations thereof. 3. The method of claim 2, wherein the nitrogen precursor comprises ammonia. 4. A method for forming a tungsten barrier material on a substrate, comprising: exposing a substrate to a tungsten precursor to form a tungsten layer thereon; and repeatedly exposing the substrate seguentially to the tungsten precursor and a nitrogen precursor to form a tungsten nitride layer on the tungsten layer, wherein the nitrogen precursor is selected from the group consisting of nitrogen gas, ammonia, hydrazine, monomethyl hydrazine, dimethyl hydrazine, t-butyl hydrazine, phenyl hydrazine, 2,2'-azotertbutane, ethylazide, derivatives thereof, and combinations thereof. 5. A method for forming a tungsten barrier material on a substrate, comprising: exposing a substrate to tungsten hexafluoride to form a tungsten layer thereon; and repeatedly exposing the substrate sequentially to tungsten hexafluoride and ammonia to form a tungsten nitride layer on the tungsten layer. 6. The method of claim 5, wherein the tungsten nitride layer has an electrical resistivity of about 380 μΩ-cm or less. 7. A method for forming a tungsten barrier material on a substrate, comprising: exposing a substrate to tungsten hexafluoride to form a tungsten layer thereon; repeatedly exposing the substrate sequentially to tungsten hexafluoride and ammonia to form a tungsten nitride layer on the tungsten layer; and depositing a tungsten bulk layer over the tungsten nitride layer by a chemical vapor deposition process. 8. The method of claim 7, wherein the tungsten nitride layer has an electrical resistivity of about 380 μΩ-cm or less. 9. The method of claim 7, wherein the tungsten layer is deposited by sequentially exposing the substrate to the tungsten hexafluoride and diborane. 10. A method for forming a tungsten barrier material on a substrate, comprising: exposing a substrate to tungsten hexafluoride to form a tungsten layer thereon; exposing the substrate sequentially to tungsten hexafluoride and ammonia to form a tungsten nitride layer on the tungsten layer, wherein the tungsten nitride layer has an electrical resistivity of about 380 μΩ-cm or less; and depositing a tungsten bulk layer over the tungsten nitride layer. 11. The method of claim 10, wherein the tungsten nitride layer is deposited by repeatedly exposing the substrate sequentially to the tungsten hexafluoride and ammonia.
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