Integrated PVD system using designated PVD chambers
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/00
H01L-021/44
H01L-021/02
출원번호
US-0213662
(2005-08-26)
등록번호
US-7432184
(2008-10-07)
발명자
/ 주소
Hosokawa,Akihiro
Inagawa,Makoto
Le,Hienminh Huu
White,John M.
출원인 / 주소
Applied Materials, Inc.
대리인 / 주소
Patterson & Sheridan LLP
인용정보
피인용 횟수 :
4인용 특허 :
22
초록▼
A method for making a film stack containing one or more metal-containing layers and a substrate processing system for forming the film stack on a substrate are provided. The substrate processing system includes at least one transfer chamber coupled to at least one load lock chamber, at least one fir
A method for making a film stack containing one or more metal-containing layers and a substrate processing system for forming the film stack on a substrate are provided. The substrate processing system includes at least one transfer chamber coupled to at least one load lock chamber, at least one first physical vapor deposition (PVD) chamber configured to deposit a first material layer on a substrate, and at least one second PVD chamber for in-situ deposition of a second material layer over the first material layer within the same substrate processing system without breaking the vacuum or taking the substrate out of the substrate processing system to prevent surface contamination, oxidation, etc. The substrate processing system is configured to provide high throughput and compact footprint for in-situ sputtering of different material layers in designated PVD chambers.
대표청구항▼
The invention claimed is: 1. A method of processing a film stack containing two or more metal-containing layers on a substrate in a substrate processing system, comprising: depositing a molybdenum layer to a thickness of about 100 Å to about 1500 Å on the substrate in a first physical v
The invention claimed is: 1. A method of processing a film stack containing two or more metal-containing layers on a substrate in a substrate processing system, comprising: depositing a molybdenum layer to a thickness of about 100 Å to about 1500 Å on the substrate in a first physical vapor deposition (PVD) chamber of the substrate processing system having a first target which comprises molybdenum; transferring the substrate to a second PVD chamber of the same substrate processing system; and depositing a layer of a material selected from the group consisting of aluminum (Al), neodymium (Nd), aluminum neodymium (AlNd), molybdenum nitride (MoxNy), copper (Cu), their metal nitrides, metal alloys, and combinations thereof to a thickness of about 1750 Å to about 3500 Å on the surface of the substrate without breaking vacuum in the second PVD chamber having a second target which comprises said material, wherein the thickness of the molybdenum layer is less than the thickness of said material layer, wherein the throughput of the substrate processing system is about 40 substrates or more per hour. 2. A method of processing a film stack containing two or more metal-containing layers on a substrate in a substrate processing system, comprising: depositing a molybdenum layer to a thickness of about 100 Å to about 1500 Å on the substrate in a first physical vapor deposition (PVD) chamber of the substrate processing system having a first target which comprises molybdenum; transferring the substrate to a second PVD chamber of the same substrate processing system; and depositing a layer of a material selected from the group consisting of aluminum (Al), neodymium (Nd), aluminum neodymium (AlNd), molybdenum nitride (MoxNy), copper (Cu), their metal nitrides, metal alloys, and combinations thereof to a thickness of about 1750 Å to about 3500 Å on the surface of the substrate without breaking vacuum in the second PVD chamber having a second target which comprises said material, wherein the thickness of the molybdenum layer is less than the thickness of said material layer, wherein the substrate processing system is configured to process one or more large area rectangular substrates of about one square meter or larger. 3. A method of processing a film stack containing two or more metal-containing layers on a substrate in a substrate processing system, comprising: depositing a molybdenum layer to a thickness of about 100 Å to about 1500 Å on the substrate in a first physical vapor deposition (PVD) chamber of the substrate processing system having a first target which comprises molybdenum; transferring the substrate to a second PVD chamber of the same substrate processing system; and depositing a layer of a material selected from the group consisting of aluminum (Al), neodymium (Nd), aluminum neodymium (AlNd), molybdenum nitride (MoxNy), copper (Cu), their metal nitrides, metal alloys, and combinations thereof to a thickness of about 1750 Å to about 3500 Å on the surface of the substrate without breaking vacuum in the second PVD chamber having a second target which comprises said material, wherein the thickness of the molybdenum layer is less than the thickness of said material layer, further comprising transferring the substrate back to the first PVD chamber and depositing another molybdenum layer on the surface of the substrate in the first PVD chamber without breaking vacuum, wherein the throughput of the substrate processing system is about 30 substrates or more per hour. 4. A method of processing a film stack containing two or more metal-containing layers on two or more substrates in a substrate processing system having three or more physical vapor deposition (PVD) chambers, comprising: depositing on a first substrate a first molybdenum layer to a thickness of about 100 Å to about 1500 Å in a first PVD chamber of the substrate processing system having a first target which comprises molybdenum; transferring the first substrate to a second PVD chamber having a second target which comprises a material selected from the group consisting of aluminum (Al), neodymium (Nd), aluminum neodymium (AlNd), molybdenum nitride (MoxNy), copper (Cu), their metal nitrides, metal alloys, and combinations thereof; depositing on a second substrate a second molybdenum layer to a thickness of about 100 Å to about 1500 Å in the first PVD chamber; transferring the second substrate to a third PVD chamber of the same substrate processing system having a third target which comprises said material; depositing a first layer of said material to a thickness of about 1750 Å to about 3500 Å over the first molybdenum layer on the surface of the first substrate in the second PVD chamber without breaking vacuum; and depositing a second layer of said material to a thickness of about 1750 Å to about 3500 Å over the second molybdenum layer on the surface of the second substrate in the third PVD chamber without breaking vacuum, wherein the thickness of the first molybdenum layer is less than the thickness of the first layer of said material on the surface of the first substrate and the thickness of the second molybdenum layer is less than the thickness of the second layer of said material on the surface of the second substrate. 5. The method of claim 4, wherein the substrate processing system is configured to process one or more large area rectangular substrates of about one square meter or larger and the throughput of the substrate processing system is about 50 substrates or more per hour. 6. A method of processing a film stack containing two or more metal-containing layers on two or more substrates in a substrate processing system having three or more PVD chambers, comprising: depositing on a first substrate a first layer of a material selected from the group consisting of aluminum (Al), neodymium (Nd), aluminum neodymium (AlNd), molybdenum nitride (MoxNy), copper (Cu), their metal nitrides, metal alloys, and combinations thereof to a thickness of about 1750 Å to about 3500 Å in a first PVD chamber of the substrate processing system having a first target which comprises said material; depositing on a second substrate a second layer of said material to a thickness of about 1750 Å to about 3500 Å in a second PVD chamber of the same substrate processing system having a second target which comprises said material; transferring the first substrate to a third PVD chamber of the same substrate processing system having a third target which comprises molybdenum; depositing on the surface of the first substrate a first molybdenum layer to a thickness of about 100 Å to about 1500 Å over the first layer of said material in the third PVD chamber without breaking vacuum; transferring the second substrate to the third PVD chamber; and depositing on the surface of the second substrate a second molybdenum layer to a thickness of about 100 Å to about 1500 Å over the second layer of said material in the third PVD chamber without breaking vacuum, wherein the thickness of the first layer of said material is more than the thickness of the first molybdenum layer on the surface of the first substrate and the thickness of the second layer of said material is more than the thickness of the second molybdenum layer on the surface of the second substrate. 7. The method of claim 6, wherein the substrate processing system is configured to process one or more large area rectangular substrates of about one square meter or larger and the throughput of the substrate processing system is about 50 substrates or more per hour.
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